New Product SiR788DP Vishay Siliconix N-Channel 30 V (D-S) MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY SkyFET Monolithic TrenchFET Gen III a V (V) R ( ) Max. Q (Typ.) I (A) DS DS(on) g Power MOSFET and Schottky Diode D 100 % R Tested 0.0034 at V = 10 V 60 g GS 30 24 nC 100 % Avalanche Tested 0.0043 at V = 4.5 V 60 GS Material categorization: For definitions of compliance please see www.vishay.com/doc 99912 PowerPAK SO-8 APPLICATIONS S 6.15 mm 5.15 mm 1 Synchronous Buck Converter S D 2 S DC/DC 3 G 4 D Schottky 8 D Diode 7 G D 6 D 5 Bottom View S Ordering Information: N-Channel MOSFET SiR788DP-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol LimitUnit V 30 Drain-Source Voltage DS V Gate-Source Voltage V 20 GS a T = 25 C 60 C a T = 70 C 60 C Continuous Drain Current (T = 150 C) I J D b, c T = 25 C 28.6 A b, c T = 70 C 22.8 A A I Pulsed Drain Current (t = 300 s) 100 DM a T = 25 C 60 C I Continuous Source-Drain Diode Current S b, c T = 25 C 5.6 A Single Pulse Avalanche Current I 25 AS L = 0.1 mH E Single Pulse Avalanche Energy 31 mJ AS T = 25 C 48 C T = 70 C 31 C P Maximum Power Dissipation W D b, c T = 25 C 5.0 A b, c T = 70 C 3.2 A T , T Operating Junction and Storage Temperature Range - 55 to 150 J stg C d, e 260 Soldering Recommendations (Peak Temperature) THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, f t 10 s R 20 25 Maximum Junction-to-Ambient thJA C/W Maximum Junction-to-Case (Drain) Steady State R 2.1 2.6 thJC Notes: a. Package limited. b. Surface mounted on 1 x 1 FR4 board. c. t = 10 s. d. See solder profile (www.vishay.com/doc 73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 70 C/W. Document Number: 63659 www.vishay.com For technical support, please contact: pmostechsupport vishay.com S12-0808-Rev. A, 16-Apr-12 1 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000New Product SiR788DP Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J Parameter Symbol Test Conditions Min. Typ.Max.Unit Static V V = 0, I = 250 A Drain-Source Breakdown Voltage 30 DS GS D V V V = V , I = 250 A Gate-Source Threshold Voltage 12.5 GS(th) DS GS D I V = 0 V, V = 20 V Gate-Source Leakage 100 nA GSS DS GS V = 30 V, V = 0 V 0.03 0.20 DS GS Zero Gate Voltage Drain Current I mA DSS V = 30 V, V = 0 V, T = 100 C 220 DS GS J a I V 5 V, V = 10 V 30 A On-State Drain Current D(on) DS GS V = 10 V, I = 20 A 0.0027 0.0034 GS D a R Drain-Source On-State Resistance DS(on) V = 4.5 V, I = 10 A 0.0033 0.0043 GS D a g V = 15 V, I = 20 A 85 S Forward Transconductance fs DS D b Dynamic C Input Capacitance 2873 iss Output Capacitance C V = 15 V, V = 0 V, f = 1 MHz 555 pF oss DS GS C Reverse Transfer Capacitance 246 rss V = 15 V, V = 10 V, I = 10 A 50 75 DS GS D Total Gate Charge Q g 24 36 nC Q Gate-Source Charge V = 15 V, V = 4.5 V, I = 10 A 6.8 gs DS GS D Q Gate-Drain Charge 7.8 gd R Gate Resistance f = 1 MHz 0.3 0.9 1.8 g t Turn-On Delay Time 21 40 d(on) t Rise Time V = 15 V, R = 1.5 15 30 r DD L I 10 A, V = 4.5 V, R = 1 t Turn-Off Delay Time D GEN g 28 55 d(off) t Fall Time 10 20 f ns t Turn-On Delay Time 918 d(on) Rise Time t 11 22 V = 15 V, R = 1.5 r DD L I 10 A, V = 10 V, R = 1 t Turn-Off Delay Time D GEN g 29 55 d(off) Fall Time t 918 f Drain-Source Body Diode Characteristics I T = 25 C Continuous Source-Drain Diode Current 60 S C A a I 100 Pulse Diode Forward Current SM Body Diode Voltage V I = 3 A 0.47 0.60 V SD S t Body Diode Reverse Recovery Time 23 45 ns rr Body Diode Reverse Recovery Charge Q 10.5 21 nC rr I = 10 A, dI/dt = 100 A/s, T = 25 C F J t Reverse Recovery Fall Time 9 a ns Reverse Recovery Rise Time t 14 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 63659 2 S12-0808-Rev. A, 16-Apr-12 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000