X-On Electronics has gained recognition as a prominent supplier of SIR798DP-T1-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SIR798DP-T1-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SIR798DP-T1-GE3 Vishay

SIR798DP-T1-GE3 electronic component of Vishay
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Part No.SIR798DP-T1-GE3
Manufacturer: Vishay
Category: MOSFETs
Description: Vishay Semiconductors MOSFET 30 Volts 60 Amps 83 Watts
Datasheet: SIR798DP-T1-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 1.5421
10 : USD 1.2638
100 : USD 0.9693
500 : USD 0.8336
1000 : USD 0.6574
3000 : USD 0.6145
6000 : USD 0.5832
9000 : USD 0.5612
24000 : USD 0.5438
N/A

Obsolete
   
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RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Pd - Power Dissipation
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Technology
Vgs - Gate-Source Voltage
Qg - Gate Charge
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Series
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Forward Transconductance - Min
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Rise Time
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Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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Mxhts
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We are delighted to provide the SIR798DP-T1-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SIR798DP-T1-GE3 and other electronic components in the MOSFETs category and beyond.

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New Product SiR798DP Vishay Siliconix N-Channel 30 V (D-S) MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 a V (V) R ( ) (Max.) Q (Typ.) I (A) DS DS(on) g Definition D SkyFET Monolithic TrenchFET 0.00205 at V = 10 V 60 GS 30 41.6 nC Power MOSFET and Schottky Diode 0.00300 at V = 4.5 V 60 GS 100 % R and UIS Tested g Compliant to RoHS Directive 2002/95/EC PowerPAK SO-8 APPLICATIONS Notebook PC S 6.15 mm 5.15 mm 1 - Vcore and Memory S 2 S - Low Side 3 G 4 D D 8 D 7 D 6 D 5 Schottky Diode G Bottom View Ordering Information: N-Channel MOSFET S SiR798DP-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol LimitUnit Drain-Source Voltage V 30 DS V Gate-Source Voltage V 20 GS a T = 25 C 60 C a T = 70 C 60 C Continuous Drain Current (T = 150 C) I J D b, c T = 25 C 38.2 A b, c T = 70 C 30.3 A A Pulsed Drain Current (t = 300 s) I 80 DM a T = 25 C 60 C Continuous Source-Drain Diode Current I S b, c T = 25 C 5 A Single Pulse Avalanche Current I 35 AS L = 0.1 mH E mJ Single Pulse Avalanche Energy 61.25 AS T = 25 C 83 C T = 70 C 53 C Maximum Power Dissipation P W D b, c T = 25 C 5.4 A b, c T = 70 C 3.4 A T , T Operating Junction and Storage Temperature Range - 55 to 150 J stg C d, e 260 Soldering Recommendations (Peak Temperature) THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, f Maximum Junction-to-Ambient t 10 s R 18 23 thJA C/W Maximum Junction-to-Case (Drain) Steady State R 11.5 thJC Notes: a. Package limited. b. Surface mounted on 1 x 1 FR4 board. c. t = 10 s. d. See solder profile (www.vishay.com/ppg 73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 65 C/W. Document Number: 63552 www.vishay.com S11-2182-Rev. A, 07-Nov-11 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000New Product SiR798DP Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J Parameter Symbol Test Conditions Min. Typ.Max.Unit Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 30 DS GS D V Gate-Source Threshold Voltage V V = V , I = 250 A 1 2.5 GS(th) DS GS D Gate-Source Leakage I V = 0 V, V = 20 V 100 nA GSS DS GS V = 30 V, V = 0 V 0.040 0.200 DS GS Zero Gate Voltage Drain Current I mA DSS V = 30 V, V = 0 V, T = 100 C 3.5 35 DS GS J a I V 5 V, V = 10 V 30 A On-State Drain Current D(on) DS GS V = 10 V, I = 20 A 0.00170 0.00205 GS D a Drain-Source On-State Resistance R DS(on) V = 4.5 V, I = 15 A 0.00220 0.00300 GS D a Forward Transconductance g V = 15 V, I = 20 A 103 S fs DS D b Dynamic Input Capacitance C 5050 iss Output Capacitance C V = 15 V, V = 0 V, f = 1 MHz 895 pF oss DS GS Reverse Transfer Capacitance C 425 rss V = 15 V, V = 10 V, I = 20 A 86 130 DS GS D Total Gate Charge Q g 41.6 63 nC Gate-Source Charge Q V = 15 V, V = 4.5 V, I = 20 A 12.5 gs DS GS D Gate-Drain Charge Q 12.8 gd Gate Resistance R f = 1 MHz 0.2 0.7 1.4 g Turn-On Delay Time t 17 34 d(on) Rise Time t 11 22 r V = 15 V, R = 1.5 DD L I 10 A, V = 10 V, R = 1 Turn-Off Delay Time t 43D GEN g 80 d(off) Fall Time t 918 f ns Turn-On Delay Time t 35 65 d(on) Rise Time t 28 55 r V = 15 V, R = 1.5 DD L I 10 A, V = 4.5 V, R = 1 Turn-Off Delay Time t 39D GEN g 70 d(off) Fall Time t 13 26 f Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current I T = 25 C 60 S C A a Pulse Diode Forward Current I 80 SM Body Diode Voltage V I = 3 A 0.43 0.6 V SD S Body Diode Reverse Recovery Time t 35 70 ns rr Body Diode Reverse Recovery Charge Q 30 60 nC rr I = 10 A, dI/dt = 100 A/s, T = 25 C F J Reverse Recovery Fall Time t 15 a ns Reverse Recovery Rise Time t 20 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 63552 2 S11-2182-Rev. A, 07-Nov-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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