X-On Electronics has gained recognition as a prominent supplier of SISS27DN-T1-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SISS27DN-T1-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SISS27DN-T1-GE3 Vishay

SISS27DN-T1-GE3 electronic component of Vishay
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Part No.SISS27DN-T1-GE3
Manufacturer: Vishay
Category: MOSFETs
Description: Vishay Semiconductors MOSFET -30V 5.6mOhm10V -50A P-Ch G-III
Datasheet: SISS27DN-T1-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.8843 ea
Line Total: USD 0.88 
Availability - 11298
Ship by Thu. 14 Nov to Mon. 18 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
34920
Ship by Fri. 08 Nov to Thu. 14 Nov
MOQ : 3000
Multiples : 3000
3000 : USD 0.3451
30000 : USD 0.3416

2412
Ship by Fri. 08 Nov to Thu. 14 Nov
MOQ : 1
Multiples : 1
1 : USD 1.1495
10 : USD 0.8128
25 : USD 0.8061
100 : USD 0.5561
250 : USD 0.5507
500 : USD 0.4365
1000 : USD 0.3555

2087
Ship by Fri. 15 Nov to Wed. 20 Nov
MOQ : 1
Multiples : 1
1 : USD 0.7278
10 : USD 0.6052
30 : USD 0.5439
100 : USD 0.4826
500 : USD 0.4386
1000 : USD 0.4194

11298
Ship by Thu. 14 Nov to Mon. 18 Nov
MOQ : 1
Multiples : 1
1 : USD 0.8843
10 : USD 0.6256
100 : USD 0.4508
500 : USD 0.3737
1000 : USD 0.3438
3000 : USD 0.3197
6000 : USD 0.3071
9000 : USD 0.3059

1534
Ship by Fri. 08 Nov to Thu. 14 Nov
MOQ : 1
Multiples : 1
1 : USD 0.98
40 : USD 0.4382
110 : USD 0.4144
1000 : USD 0.4074
1500 : USD 0.399

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Series
Brand
Forward Transconductance - Min
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Transistor Type
Cnhts
Hts Code
Mxhts
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We are delighted to provide the SISS27DN-T1-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SISS27DN-T1-GE3 and other electronic components in the MOSFETs category and beyond.

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3.3 mm3.3 mm SiSS27DN www.vishay.com Vishay Siliconix P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET V (V) R ( ) MAX. I (A) Q (TYP.) DS DS(on) D g Low thermal resistance PowerPAK package e 0.0056 at V = -10 V -50 GS with small size and low 0.75 mm profile e -30 0.0070 at V = -6 V -50 45 nC GS 100 % R and UIS tested e g 0.0090 at V = -4.5 V -50 GS Material categorization: For definitions of compliance please see www.vishay.com/doc 99912 PowerPAK 1212-8S D APPLICATIONS D 8 D 7 D Notebook computers and mobile 6 S 5 computing - Adaptor switch -Load switch G 1 -DC/DC converter 2 S 3 S 4 - Power management S 11 G Top View Bottom View D Ordering Information: P-Channel MOSFET SiSS27DN-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V -30 DS V Gate-Source Voltage V 20 GS e T = 25 C -50 C e T = 70 C -50 C Continuous Drain Current (T = 150 C) I J D a,b T = 25 C -23 A a,b T = 70 C -18.5 A A Pulsed Drain Current (t = 100 s) I -200 DM T = 25 C -47.5 C Continuous Source-Drain Diode Current I S a,b T = 25 C -4 A Avalanche Current I -25 AS L = 0.1 mH Single-Pulse Avalanche Energy E 31 mJ AS T = 25 C 57 C T = 70 C 36 C Maximum Power Dissipation P W D a,b T = 25 C 4.8 A a,b T = 70 C 3 A Operating Junction and Storage Temperature Range T , T -50 to 150 J stg C c,d Soldering Recommendations (Peak Temperature) 260 Notes a. Surface mounted on 1 x 1 FR4 board. b. t = 10 s. c. See solder profile (www.vishay.com/doc 73257). The PowerPAK 1212-8S is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. d. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. e. Package limited. S13-1161-Rev. A, 13-May-13 Document Number: 62847 1 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 3.3 mm3.3 mm SiSS27DN www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYPICALMAXIMUMUNIT a,b Maximum Junction-to-Ambient t 10 s R 21 26 thJA C/W Maximum Junction-to-Case (Drain) Steady State R 1.7 2.2 thJC Notes a. Surface mounted on 1 x 1 FR4 board. b. Maximum under steady state conditions is 63 C/W. SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = - 250 A -30 - - V DS GS D V Temperature Coefficient V /T --22 - DS DS J I = -250 A mV/C D V Temperature Coefficient V /T -5.7 - GS(th) GS(th) J Gate-Source Threshold Voltage V V = V , I = -250 A -1 - -2.2 V GS(th) DS GS D Gate-Source Leakage I V = 0 V, V = 20 V - - 100 nA GSS DS GS V = -30 V, V = 0 V - - -1 DS GS Zero Gate Voltage Drain Current I A DSS V = -30 V, V = 0 V, T = 55 C - - -10 DS GS J a On-State Drain Current I V -5 V, V = -10 V -20 - - A D(on) DS GS V = -10 V, I = -15 A - 0.0046 0.0056 GS D a Drain-Source On-State Resistance R V = -6 V, I = -10 A - 0.0058 0.0070 DS(on) GS D V = -4.5 V, I = -5 A - 0.0073 0.0090 GS D a Forward Transconductance g V = -15 V, I = -15 A - 52 - S fs DS D b Dynamic Input Capacitance C -5250 - iss Output Capacitance C V = -15 V, V = 0 V, f = 1 MHz -530 - pF oss DS GS Reverse Transfer Capacitance C -485 - rss V = -15 V, V = -10 V, I = -20 A - 92 140 DS GS D Total Gate Charge Q g -45 70 nC Gate-Source Charge Q V = -15 V, V = -4.5 V, I = -20 A -15 - gs DS GS D Gate-Drain Charge Q -16- gd Gate Resistance R f = 1 MHz 0.6 3 6 g Turn-On Delay Time t - 60 120 d(on) Rise Time t -45 90 V = -15 V, R = 1.5 r DD L I -10 A, V = -4.5 V, R = 1 Turn-Off DelayTime t -50100 D GEN g d(off) Fall Time t -20 40 f ns Turn-On Delay Time t -16 30 d(on) Rise Time t -5 10 r V = -15 V, R = 1.5 DD L I -10 A, V = -10 V, R = 1 Turn-Off DelayTime t -D GEN g65130 d(off) Fall Time t -10 20 f Drain-Source Body Diode Characteristics c Continuous Source-Drain Diode Current I T = 25 C - - -50 S C A d Pulse Diode Forward Current I - - -200 SM Body Diode Voltage V I = -10 A - -0.8 -1.2 V SD F Body Diode Reverse Recovery Time t -30 60 ns rr Body Diode Reverse Recovery Charge Q -21 40 nC rr I = -10 A, dI/dt = 100 A/s, T = 25 C F J Reverse Recovery Fall Time t -16 - a ns Reverse Recovery Rise Time t -14 - b Notes a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Package limited. d. t = 100 s. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S13-1161-Rev. A, 13-May-13 Document Number: 62847 2 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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