X-On Electronics has gained recognition as a prominent supplier of SIZ704DT-T1-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SIZ704DT-T1-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SIZ704DT-T1-GE3 Vishay

SIZ704DT-T1-GE3 electronic component of Vishay
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Part No.SIZ704DT-T1-GE3
Manufacturer: Vishay
Category: MOSFETs
Description: Vishay Semiconductors MOSFET 30V 1216A 2030W 2413.5mohm 10V
Datasheet: SIZ704DT-T1-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.0176 ea
Line Total: USD 1.02 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 1.0176
10 : USD 0.8449
100 : USD 0.6766
500 : USD 0.5896
1000 : USD 0.4938
3000 : USD 0.4715
6000 : USD 0.4715
9000 : USD 0.4537
24000 : USD 0.4525

   
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Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
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Pd - Power Dissipation
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We are delighted to provide the SIZ704DT-T1-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SIZ704DT-T1-GE3 and other electronic components in the MOSFETs category and beyond.

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New Product SiZ704DT Vishay Siliconix N-Channel 30-V (D-S) MOSFETs FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) R ( )I (A) Q (Typ.) DS DS(on) D g Definition a TrenchFET Power MOSFETs 0.0240 at V = 10 V GS 12 Channel-1 30 3.8 nC 100 % R and UIS Tested a = 4.5 V g 0.0300 at V GS 12 Compliant to RoHS Directive 2002/95/EC a 0.0135 at V = 10 V GS 16 Channel-2 30 7.3 nC a 0.0170 at V = 4.5 V GS 16 APPLICATIONS Notebook System Power PowerPAIR 6 x 3.7 POL Low Current DC/DC Pin 1 G 1 3.73 mm D 1 1 D 1 2 D 1 D 1 3 G 1 S /D 1 2 G 2 N-Channel 1 (Pin 7) S MOSFET S /D 2 1 2 6 6 mm S 2 5 4 G 2 Ordering Information: N-Channel 2 MOSFET SiZ704DT-T1-GE3 (Lead (Pb)-free and Halogen-free) S 2 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol Channel-1Channel-2Unit V 30 30 Drain-Source Voltage DS V V 20 Gate-Source Voltage GS a a T = 25 C 12 C 16 a a T = 70 C 12 C 16 Continuous Drain Current (T = 150 C) I J D b, c b, c T = 25 C A 9.4 14 b, c b, c T = 70 C A 7.5 11.2 A I Pulsed Drain Current 30 40 DM a a T = 25 C 12 C 16 I Source Drain Current Diode Current S b, c b, c T = 25 C A 3.1 3.7 I Single Pulse Avalanche Current 10 15 AS L = 0.1 mH Single Pulse Avalanche Energy E 511 mJ AS T = 25 C 20 30 C T = 70 C 12.9 19 C Maximum Power Dissipation P W D b, c b, c T = 25 C A 3.7 4.5 b, c b, c T = 70 C A 2.4 2.9 T , T Operating Junction and Storage Temperature Range - 55 to 150 J stg C d, e Soldering Recommendations (Peak Temperature) 260 THERMAL RESISTANCE RATINGS Channel-1 Channel-2 Parameter Symbol Unit Typ. Max. Typ. Max. b, f t 10 s R 26 34 21 28 Maximum Junction-to-Ambient thJA C/W R Maximum Junction-to-Case (Drain) Steady State 4.7 6.2 3.2 4.2 thJC Notes: a. Package limited. b. Surface mounted on 1 x 1 FR4 board. c. t = 10 s. d. See solder profile (www.vishay.com/doc 73257). The PowerPAIR is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 72 C/W for Channel-1 and 67 C/W for Channel-2. Document Number: 65367 www.vishay.com S11-2379-Rev. C, 28-Nov-11 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000New Product SiZ704DT Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J Parameter Symbol Test Conditions Min. Typ.Max.Unit Static V = 0 V, I = 250 A Ch-1 30 GS D V Drain-Source Breakdown Voltage V DS V = 0 V, I = 250 A Ch-2 30 GS D I = 250 A Ch-1 35 D V Temperature Coefficient V /T DS DS J I = 250 A Ch-2 33 D mV/C I = 250 A Ch-1 - 4.5 D V Temperature Coefficient V /T GS(th) GS(th) J I = 250 A Ch-2 - 5 D V = V , I = 250 A Ch-1 1 2.5 DS GS D V Gate Threshold Voltage V GS(th) V = V , I = 250 A Ch-2 1.2 2.5 DS GS D Ch-1 100 I V = 0 V, V = 20 V Gate-Body Leakage nA GSS DS GS Ch-2 100 V = 30 V, V = 0 V Ch-1 1 DS GS V = 30 V, V = 0 V Ch-2 1 DS GS I Zero Gate Voltage Drain Current A DSS V = 30 V, V = 0 V, T = 55 C Ch-1 5 DS GS J V = 30 V, V = 0 V, T = 55 C Ch-2 5 DS GS J V 5 V, V = 10 V Ch-1 20 DS GS b I A On-State Drain Current D(on) V 5 V, V = 10 V Ch-2 20 DS GS V = 10 V, I = 7.8 A Ch-1 0.0200 0.0240 GS D V = 10 V, I = 10 A Ch-2 0.0105 0.0135 GS D b R Drain-Source On-State Resistance DS(on) V = 4.5 V, I = 7 A Ch-1 0.0240 0.0300 GS D V = 4.5 V, I = 7 A Ch-2 0.0135 0.0170 GS D V = 10 V, I = 7.8 A Ch-1 17 DS D b g S Forward Transconductance fs V = 10 V, I = 10 A Ch-2 24 DS D a Dynamic Ch-1 435 C Input Capacitance iss Channel-1 Ch-2 846 V = 15 V, V = 0 V, f = 1 MHz DS GS Ch-1 95 C Output Capacitance pF oss Ch-2 187 Channel-2 Ch-1 42 V = 15 V, V = 0 V, f = 1 MHz DS GS C Reverse Transfer Capacitance rss Ch-2 72 V = 15 V, V = 10 V, I = 7.8 A Ch-1 8 12 DS GS D V = 15 V, V = 10 V, I = 10 A Ch-2 15.4 23 DS GS D Total Gate Charge Q g Ch-1 3.8 6 Channel-1 Ch-2 7.3 11 nC V = 15 V, V = 4.5 V, I = 7.8 A DS GS D Ch-1 1.4 Q Gate-Source Charge gs Ch-2 2.3 Channel-2 Ch-1 1.1 V = 15 V, V = 4.5 V, I = 10 A DS GS D Q Gate-Drain Charge gd Ch-2 2.2 Ch-1 0.6 3.2 6.4 R Gate Resistance f = 1 MHz g Ch-2 0.2 0.8 1.6 Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test pulse width 300 s, duty cycle 2 %. www.vishay.com Document Number: 65367 2 S11-2379-Rev. C, 28-Nov-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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