X-On Electronics has gained recognition as a prominent supplier of SISS32LDN-T1-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SISS32LDN-T1-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SISS32LDN-T1-GE3 Vishay

SISS32LDN-T1-GE3 electronic component of Vishay
SISS32LDN-T1-GE3 Vishay
SISS32LDN-T1-GE3 MOSFETs
SISS32LDN-T1-GE3  Semiconductors

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Part No. SISS32LDN-T1-GE3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET N-CHANNEL 80V PowerPAK 1212-8S
Datasheet: SISS32LDN-T1-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.8397 ea
Line Total: USD 0.84 
Availability - 4
Ship by Tue. 14 Jan to Fri. 17 Jan
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
4
Ship by Tue. 14 Jan to Fri. 17 Jan
MOQ : 1
Multiples : 1
1 : USD 0.8397
10 : USD 0.8167
30 : USD 0.8034
100 : USD 0.7882

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Transistor Type
Brand
Forward Transconductance - Min
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the SISS32LDN-T1-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SISS32LDN-T1-GE3 and other electronic components in the MOSFETs category and beyond.

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3.33.3 mmmm SiSS32LDN www.vishay.com Vishay Siliconix N-Channel 80 V (D-S) MOSFET FEATURES PowerPAK 1212-8S D TrenchFET Gen IV power MOSFET D 8 D 7 D 6 Very low R - Q figure-of-merit (FOM) DS g 5 Tuned for the lowest R - Q FOM DS oss 100 % R and UIS tested g Material categorization: for definitions of 1 compliance please see www.vishay.com/doc 99912 2 S 3 S 4 11 S APPLICATIONS G D Top View Bottom View Synchronous rectification PRODUCT SUMMARY Primary side switch V (V) 80 DS DC/DC converter G R max. ( ) at V = 10 V 0.0072 DS(on) GS Motor drive switch R max. ( ) at V = 4.5 V 0.0095 DS(on) GS Battery and load switch Q typ. (nC) 17.7 g Industrial S I (A) 63 D N-Channel MOSFET Configuration Single ORDERING INFORMATION Package PowerPAK 1212-8S Lead (Pb)-free and halogen-free SiSS32LDN-T1-GE3 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A PARAMETER SYMBOL LIMIT UNIT Drain-source voltage V 80 DS V Gate-source voltage V 20 GS T = 25 C 63 C T = 70 C 50.3 C Continuous drain current (T = 150 C) I J D b, c T = 25 C 17.4 A b, c T = 70 C 13.9 A A Pulsed drain current (t = 100 s) I 150 DM T = 25 C 59.7 C Continuous source-drain diode current I S b, c T = 25 C 4.5 A Single pulse avalanche current I 20 AS L = 0.1 mH Single pulse avalanche energy E 20 mJ AS T = 25 C 65.7 C T = 70 C 42 C Maximum power dissipation P W D b, c T = 25 C 5 A b, c T = 70 C 3.2 A Operating junction and storage temperature range T , T -55 to +150 J stg C c Soldering recommendations (peak temperature) 260 THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYPICAL MAXIMUM UNIT b Maximum junction-to-ambient t 10 s R 20 25 thJA C/W Maximum junction-to-case (drain) Steady state R 1.5 1.9 thJC Notes a. Package limited b. Surface mounted on 1 x 1 FR4 board c. t = 10 s d. See solder profile (www.vishay.com/doc 73257). The PowerPAK 1212-8S is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components f. Maximum under steady state conditions is 63 C/W g. T = 25 C C S19-0701-Rev. A, 19-Aug-2019 Document Number: 77179 1 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 3.3 mm3.3 mmSiSS32LDN www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOL TEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-source breakdown voltage V V = 0 V, I = 1 mA 80 - - V DS GS D I = 10 mA V temperature coefficient V /T -60 - DS DS J D mV/C V temperature coefficient V /T I = 250 A --4.8- D GS(th) GS(th) J Gate-source threshold voltage V V = V , I = 250 A 1- 2.5 V DS GS D GS(th) V = 0 V, V = 20 V Gate-source leakage I - - 100 nA GSS DS GS V = 80 V, V = 0 V -- 1 DS GS Zero gate voltage drain current I A DSS V = 80 V, V = 0 V, T = 70 C -- 15 DS GS J a On-state drain current I V 10 V, V = 10 V 40 - - A D(on) DS GS V = 10 V, I = 15 A - 0.0058 0.0072 GS D a Drain-source on-state resistance R DS(on) V = 4.5 V, I = 10 A - 0.0073 0.0095 GS D a Forward transconductance g V = 15 V, I = 15 A - 55 - S fs DS D b Dynamic Input capacitance C - 2550 - iss V = 40 V, V = 0 V, f = 1 MHz Output capacitance C - 250 - pF oss DS GS Reverse transfer capacitance C - 15.5 - rss V = 40 V, V = 10 V, I = 10 A - 37.5 57 DS GS D Total gate charge Q g - 17.7 27 Gate-source charge Q -7V = 40 V, V = 4.5 V, I =10 A.3- nC DS GS D gs Gate-drain charge Q -4.6 - gd V = 40 V, V = 0 V Output charge Q -35 - oss DS GS Gate resistance R f = 1 MHz 0.3 0.86 1.5 g Turn-on delay time t -12 24 d(on) Rise time t -6 12 r V = 40 V, R = 4 , I 10 A, DD L D V = 10 V, R = 1 Turn-off delay time t GEN g -28 56 d(off) Fall time t -6 12 f ns Turn-on delay time t -22 44 d(on) Rise time t - 61 122 r V = 40 V, R = 4 , I 10 A, DD L D V = 7.5 V, R = 1 Turn-off delay time t GEN g -26 52 d(off) Fall time t -10 20 f Drain-Source Body Diode Characteristics Continuous source-drain diode current I T = 25 C - - 59.7 C S A Pulse diode forward current I - - 150 SM I = 5 A, V = 0 V Body diode voltage V - 0.75 1.1 V SD S GS Body diode reverse recovery time t -40 80 ns rr Body diode reverse recovery charge Q -45 90 nC I = 10 A, di/dt = 100 A/s, rr F T = 25 C J Reverse recovery fall time t -24 - a ns Reverse recovery rise time t -16 - b Notes a. Pulse test pulse width 300 s, duty cycle 2 % b. Guaranteed by design, not subject to production testing Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S19-0701-Rev. A, 19-Aug-2019 Document Number: 77179 2 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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