X-On Electronics has gained recognition as a prominent supplier of SIR826DP-T1-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SIR826DP-T1-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SIR826DP-T1-GE3 Vishay

SIR826DP-T1-GE3 electronic component of Vishay
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Part No.SIR826DP-T1-GE3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET 80V 4.8mOhm@10V 60A N-Ch MV T-FET
Datasheet: SIR826DP-T1-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3000: USD 1.6766 ea
Line Total: USD 5029.8 
Availability - 0
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
0
Ship by Fri. 08 Nov to Thu. 14 Nov
MOQ : 3000
Multiples : 3000
3000 : USD 1.7506
6000 : USD 1.6184

0
Ship by Fri. 08 Nov to Thu. 14 Nov
MOQ : 1
Multiples : 1
1 : USD 3.8625
10 : USD 3.3312
100 : USD 2.6768
500 : USD 2.1993
1000 : USD 1.8223

0
Ship by Fri. 08 Nov to Thu. 14 Nov
MOQ : 1
Multiples : 1
1 : USD 3.8625
10 : USD 3.3312
100 : USD 2.6768
500 : USD 2.1993
1000 : USD 1.8223

0
Ship by Fri. 08 Nov to Thu. 14 Nov
MOQ : 1
Multiples : 1
1 : USD 3.3696
10 : USD 2.7924
100 : USD 2.1606
500 : USD 1.8954
1000 : USD 1.5678
3000 : USD 1.4664

0
Ship by Fri. 08 Nov to Thu. 14 Nov
MOQ : 3000
Multiples : 3000
3000 : USD 1.6766

0
Ship by Fri. 08 Nov to Thu. 14 Nov
MOQ : 3000
Multiples : 3000
3000 : USD 1.6487

0
Ship by Fri. 15 Nov to Wed. 20 Nov
MOQ : 1
Multiples : 1
1 : USD 0.8871
10 : USD 0.8685
30 : USD 0.8553
100 : USD 0.8421

0
Ship by Thu. 14 Nov to Mon. 18 Nov
MOQ : 1
Multiples : 1
1 : USD 4.0499
10 : USD 2.9008
100 : USD 2.3711
500 : USD 1.9161
1000 : USD 1.6372
3000 : USD 1.5401

0
Ship by Fri. 08 Nov to Thu. 14 Nov
MOQ : 3000
Multiples : 3000
3000 : USD 1.2412

0
Ship by Fri. 08 Nov to Thu. 14 Nov
MOQ : 3000
Multiples : 3000
3000 : USD 1.4628

0
Ship by Fri. 08 Nov to Thu. 14 Nov
MOQ : 3000
Multiples : 3000
3000 : USD 1.2033

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Series
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Forward Transconductance - Min
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Gate Charge Qg
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Height
Length
Transistor Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
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We are delighted to provide the SIR826DP-T1-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SIR826DP-T1-GE3 and other electronic components in the MOSFETs category and beyond.

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New Product SiR826DP Vishay Siliconix N-Channel 80 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 a V (V) R ( ) Q (Typ.) I (A) DS DS(on) g D Definition 0.0048 at V = 10 V 60 GS TrenchFET Power MOSFET 0.0052 at V = 7.5 V 80 60 27.9 nC GS 100 % R Tested g 0.0065 at V = 4.5 V 60 100 % UIS Tested GS Compliant to RoHS Directive 2002/95/EC PowerPAK SO-8 APPLICATIONS Fixed Telecom S 6.15 mm 5.15 mm POL 1 S D 2 DC/DC Converter S 3 G Primary and Secondary Side Switch 4 D 8 D 7 G D 6 D 5 Bottom View S Ordering Information: SiR826DP-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol LimitUnit Drain-Source Voltage V 80 DS V V Gate-Source Voltage 20 GS a T = 25 C C 60 a T = 70 C 60 C Continuous Drain Current (T = 150 C) I J D b, c T = 25 C A 25 b, c T = 70 C A 20 A I Pulsed Drain Current 100 DM a T = 25 C C 60 I Continuous Source-Drain Diode Current S b, c T = 25 C A 5.6 I Single Pulse Avalanche Current 35 AS L = 0.1 mH E mJ Single Pulse Avalanche Energy 61 AS T = 25 C 104 C T = 70 C 66.6 C Maximum Power Dissipation P W D b, c T = 25 C A 6.25 b, c T = 70 C A 4.0 T , T Operating Junction and Storage Temperature Range - 55 to 150 J stg C d, e Soldering Recommendations (Peak Temperature) 260 THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, f t 10 s R 15 20 Maximum Junction-to-Ambient thJA C/W Maximum Junction-to-Case (Drain) Steady State R 0.9 1.2 thJC Notes: a. Package limited. b. Surface mounted on 1 x 1 FR4 board. c. t = 10 s. d. See solder profile (www.vishay.com/ppg 73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 54 C/W. Document Number: 67196 www.vishay.com S10-2761-Rev. A, 29-Nov-10 1New Product SiR826DP Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J Parameter Symbol Test Conditions Min. Typ.Max.Unit Static V V = 0 V, I = 250 A Drain-Source Breakdown Voltage 80 V DS GS D V Temperature Coefficient V /T 34 DS DS J I = 250 A mV/C D V Temperature Coefficient V /T - 6.1 GS(th) GS(th) J V V = V , I = 250 A Gate-Source Threshold Voltage 1.2 2.8 V GS(th) DS GS D I V = 0 V, V = 20 V Gate-Source Leakage 100 nA GSS DS GS V = 80 V, V = 0 V 1 DS GS I Zero Gate Voltage Drain Current A DSS V = 80 V, V = 0 V, T = 55 C 10 DS GS J a I V 5 V, V = 10 V 30 A On-State Drain Current D(on) DS GS V = 10 V, I = 20 A 0.0040 0.0048 GS D a R V = 7.5 V, I = 20 A 0.0043 0.0052 Drain-Source On-State Resistance DS(on) GS D V = 4.5 V, I = 15 A 0.0054 0.0065 GS D a g V = 10 V, I = 20 A 80 S Forward Transconductance fs DS D b Dynamic Input Capacitance C 2900 iss C V = 40 V, V = 0 V, f = 1 MHz Output Capacitance 1870 pF oss DS GS C Reverse Transfer Capacitance 130 rss V = 40 V, V = 10 V, I = 20 A 60 90 DS GS D Total Gate Charge Q V = 40 V, V = 7.5 V, I = 20 A 45.5 69 g DS GS D 27.9 42 nC Q Gate-Source Charge V = 40 V, V = 4.5 V, I = 20 A 8.5 gs DS GS D Q Gate-Drain Charge 12 gd Gate Resistance R f = 1 MHz 0.3 0.95 1.9 g t Turn-On Delay Time 12 24 d(on) Rise Time t 11 22 V = 40 V, R = 2 r DD L I 20 A, V = 10 V, R = 1 t Turn-Off Delay Time D GEN g 36 70 d(off) Fall Time t 816 f ns t Turn-On Delay Time 15 30 d(on) Rise Time t 14 28 V = 40 V, R = 2 r DD L I 20 A, V = 7.5 V, R = 1 t Turn-Off Delay Time D GEN g 36 70 d(off) Fall Time t 816 f Drain-Source Body Diode Characteristics I T = 25 C Continuous Source-Drain Diode Current 60 S C A a I 100 Pulse Diode Forward Current SM Body Diode Voltage V I = 5 A 0.74 1.1 V SD S t Body Diode Reverse Recovery Time 65 130 ns rr Body Diode Reverse Recovery Charge Q 78 155 nC rr I = 20 A, dI/dt = 100 A/s, T = 25 C F J t Reverse Recovery Fall Time 25 a ns t Reverse Recovery Rise Time 40 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 67196 2 S10-2761-Rev. A, 29-Nov-10

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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