SiR866DP Vishay Siliconix N-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free a V (V) R () Q (Typ.) I (A) DS DS(on) g D TrenchFET Gen III Power MOSFET RoHS g 0.0019 at V = 10 V GS 60 Low R DS(on) COMPLIANT 20 35.3 nC g 0.00255 at V = 4.5 V PWM (Q and R ) Optimized GS 60 gd g 100 % R Tested g 100 % UIS Tested PowerPAK SO-8 APPLICATIONS Fixed Telecom S 6.15 mm 5.15 mm Low-Side dc-to-dc 1 S D OR-ing 2 S 3 G 4 D 8 D G 7 D 6 D 5 Bottom View S N-Channel MOSFET Ordering Information: SiR866DP-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol LimitUnit V Drain-Source Voltage 20 DS V V Gate-Source Voltage 20 GS g T = 25 C C 60 g T = 70 C C 60 Continuous Drain Current (T = 150 C) I J D b, c T = 25 C A 39 b, c T = 70 C A 31 A I Pulsed Drain Current 80 DM g T = 25 C C 60 Continuous Source-Drain Diode Current I S b, c T = 25 C A 4.9 I Single Pulse Avalanche Current 40 AS L = 0.1 mH E 80 mJ Avalanche Energy AS T = 25 C 83 C T = 70 C 53 C P Maximum Power Dissipation W D b, c T = 25 C A 5.4 b, c T = 70 C A 3.4 T , T Operating Junction and Storage Temperature Range - 55 to 150 J stg C d, e Soldering Recommendations (Peak Temperature) 260 THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, f R t 10 s 18 23 Maximum Junction-to-Ambient thJA C/W R Maximum Junction-to-Case (Drain) Steady State 1.0 1.5 thJC Notes: a. Based on T = 25 C. C b. Surface Mounted on 1 x 1 FR4 board. c. t = 10 s. d. See Solder Profile (SiR866DP Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = 0 V, I = 250 A Drain-Source Breakdown Voltage 20 V DS GS D V Temperature Coefficient V /T 20 DS DS J I = 5 mA mV/C D V Temperature Coefficient V /T - 6.4 GS(th) GS(th) J V V = V , I = 250 A Gate-Source Threshold Voltage 1.2 2.3 V GS(th) DS GS D I V = 0 V, V = 20 V Gate-Source Leakage 100 nA GSS DS GS V = 20 V, V = 0 V 1 DS GS Zero Gate Voltage Drain Current I A DSS V = 20 V, V = 0 V, T = 55 C 10 DS GS J a I V 5 V, V = 10 V 30 A On-State Drain Current D(on) DS GS V = 10 V, I = 20 A 0.0015 0.0019 GS D a R Drain-Source On-State Resistance DS(on) V = 4.5 V, I = 15 A 0.00205 0.00255 GS D a g V = 15 V, I = 20 A 78 S Forward Transconductance fs DS D b Dynamic C Input Capacitance 4730 iss Output Capacitance C V = 10 V, V = 0 V, f = 1 MHz 1310 pF oss DS GS C Reverse Transfer Capacitance 540 rss V = 10 V, V = 10 V, I = 15 A 71 107 DS GS D Q Total Gate Charge g 35.3 53 nC Q Gate-Source Charge V = 10 V, V = 4.5 V, I = 15 A 11.7 gs DS GS D Q Gate-Drain Charge 9.5 gd R Gate Resistance f = 1 MHz 0.2 0.95 1.9 g t Turn-On Delay Time 42 80 d(on) t Rise Time V = 10 V, R = 1 23 45 r DD L I 10 A, V = 4.5 V, R = 1 t Turn-Off Delay Time D GEN g 66 120 d(off) Fall Time t 49 90 f ns t Turn-On Delay Time 20 40 d(on) Rise Time t 816 V = 10 V, R = 1 r DD L I 10 A, V = 10 V, R = 1 t Turn-Off Delay Time D GEN g 46 90 d(off) Fall Time t 915 f Drain-Source Body Diode Characteristics I T = 25 C Continuous Source-Drain Diode Current 60 S C A a I 80 Pulse Diode Forward Current SM Body Diode Voltage V I = 4 A 0.72 1.1 V SD S t Body Diode Reverse Recovery Time 40 70 ns rr Body Diode Reverse Recovery Charge Q 34 60 nC rr I = 10 A, dI/dt = 100 A/s, T = 25 C F J t Reverse Recovery Fall Time 19 a ns Reverse Recovery Rise Time t 21 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 68751 2 S-81712-Rev. A, 04-Aug-08