New Product Si4186DY Vishay Siliconix N-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 a V (V) R () Q (Typ.) I (A) DS DS(on) g D Definition 0.0026 at V = 10 V 35.8 TrenchFET Power MOSFET GS 20 28.7 nC 100 % R Tested 0.0032 at V = 4.5 V g 32.2 GS 100 % UIS Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS OR-ing SO-8 DC-DC Low-Side Switch D SD 1 8 SD 2 7 SD 3 6 GD G 4 5 Top View S Ordering Information: Si4186DY-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol Limit Unit V Drain-Source Voltage 20 DS V V Gate-Source Voltage 20 GS T = 25 C 35.8 C T = 70 C 26.5 C Continuous Drain Current (T = 150 C) I J D b, c T = 25 C A 25.3 b, c T = 70 C A 20.1 A I Pulsed Drain Current 70 DM T = 25 C 5.4 C Continuous Source-Drain Diode Current I S b, c T = 25 C A 2.7 I Single Pulse Avalanche Current 30 AS L = 0.1 mH E mJ Avalanche Energy 45 AS T = 25 C 6.0 C T = 70 C 3.3 C P Maximum Power Dissipation W D b, c T = 25 C A 3.0 b, c T = 70 C A 1.9 T , T Operating Junction and Storage Temperature Range - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, d t 10 s R 33 42 Maximum Junction-to-Ambient thJA C/W R Maximum Junction-to-Foot (Drain) Steady State 16 21 thJF Notes: a. Based on T = 25 C. C b. Surface Mounted on 1 x 1 FR4 board. c. t = 10 s. d. Maximum under Steady State conditions is 85 C/W. Document Number: 65152 www.vishay.com S09-1532-Rev. A, 10-Aug-09 1New Product Si4186DY Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = 0 V, I = 250 A Drain-Source Breakdown Voltage 20 V DS GS D V Temperature Coefficient V /T 20 DS DS J I = 250 A mV/C D V Temperature Coefficient V /T - 6.7 GS(th) GS(th) J V V = V , I = 250 A Gate-Source Threshold Voltage 1.2 2.4 V GS(th) DS GS D I V = 0 V, V = 20 V Gate-Source Leakage 100 nA GSS DS GS V = 20 V, V = 0 V 1 DS GS I Zero Gate Voltage Drain Current A DSS V = 20 V, V = 0 V, T = 55 C 10 DS GS J a I V 5 V, V = 10 V 30 A On-State Drain Current D(on) DS GS V = 10 V, I = 15 A 0.0021 0.0026 GS D a R Drain-Source On-State Resistance DS(on) V = 4.5 V, I = 10 A 0.0026 0.0032 GS D a g V = 10 V, I = 15 A 63 S Forward Transconductance fs DS D b Dynamic Input Capacitance C 3630 iss C V = 10 V, V = 0 V, f = 1 MHz Output Capacitance 1085 pF oss DS GS C Reverse Transfer Capacitance 453 rss V = 10 V, V = 10 V, I = 10 A 60 90 DS GS D Q Total Gate Charge g 28.7 44 nC Q Gate-Source Charge V = 10 V, V = 4.5 V, I = 10 A 8.9 gs DS GS D Q Gate-Drain Charge 7.4 gd R Gate Resistance f = 1 MHz 0.3 1.2 2.4 g t Turn-On Delay Time 29 55 d(on) t Rise Time V = 10 V, R = 1 16 30 r DD L I 10 A, V = 4.5 V, R = 1 Turn-Off Delay Time t 40 75 D GEN g d(off) t Fall Time 13 26 f ns Turn-On Delay Time t 12 24 d(on) t Rise Time V = 10 V, R = 1 918 r DD L I 10 A, V = 10 V, R = 1 Turn-Off Delay Time t 32 60 D GEN g d(off) t Fall Time 918 f Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current I T = 25 C 5.4 S C A a I 70 Pulse Diode Forward Current SM V I = 4 A Body Diode Voltage 0.74 1.1 V SD S Body Diode Reverse Recovery Time t 30 60 ns rr Q Body Diode Reverse Recovery Charge 20 40 nC rr I = 10 A, dI/dt = 100 A/s, T = 25 C F J Reverse Recovery Fall Time t 16 a ns t Reverse Recovery Rise Time 14 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 % b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 65152 2 S09-1532-Rev. A, 10-Aug-09