X-On Electronics has gained recognition as a prominent supplier of SI4178DY-T1-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI4178DY-T1-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SI4178DY-T1-GE3 Vishay

SI4178DY-T1-GE3 electronic component of Vishay
SI4178DY-T1-GE3 Vishay
SI4178DY-T1-GE3 MOSFETs
SI4178DY-T1-GE3  Semiconductors

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See Product Specifications
Part No. SI4178DY-T1-GE3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET 30V Vds 25V Vgs SO-8
Datasheet: SI4178DY-T1-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
2500: USD 0.1861 ea
Line Total: USD 465.25 
Availability - 2425
Ship by Thu. 06 Mar to Wed. 12 Mar
MOQ: 2500  Multiples: 2500
Pack Size: 2500
Availability Price Quantity
1624
Ship by Thu. 06 Mar to Wed. 12 Mar
MOQ : 167
Multiples : 1
167 : USD 0.3903
168 : USD 0.3873
170 : USD 0.3834
199 : USD 0.3271
250 : USD 0.3238
500 : USD 0.2929
1000 : USD 0.2355

9151
Ship by Thu. 13 Mar to Tue. 18 Mar
MOQ : 5
Multiples : 5
5 : USD 0.4707
50 : USD 0.3129
150 : USD 0.2465
500 : USD 0.2029
2500 : USD 0.1835
5000 : USD 0.1718

2385
Ship by Tue. 04 Mar to Thu. 06 Mar
MOQ : 1
Multiples : 1
1 : USD 1.274
5 : USD 0.742
50 : USD 0.5586
53 : USD 0.3332
146 : USD 0.315

2425
Ship by Thu. 06 Mar to Wed. 12 Mar
MOQ : 2500
Multiples : 2500
2500 : USD 0.1861
5000 : USD 0.1841
7500 : USD 0.1824
10000 : USD 0.1805
12500 : USD 0.1786
17500 : USD 0.177
25000 : USD 0.1751

1624
Ship by Thu. 06 Mar to Wed. 12 Mar
MOQ : 170
Multiples : 1
170 : USD 0.3834
199 : USD 0.3271
250 : USD 0.3238
500 : USD 0.2929
1000 : USD 0.2355

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Height
Length
Series
Transistor Type
Width
Brand
Forward Transconductance - Min
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the SI4178DY-T1-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI4178DY-T1-GE3 and other electronic components in the MOSFETs category and beyond.

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The SI4178DY-T1-GE3 is a Dual N-Channel Enhancement Mode Field-Effect Transistor (MOSFET) manufactured by Vishay. It has an operating voltage of 30V and a gate threshold voltage of 25V with a package size of SO-8. It is rated for a maximum power dissipation of 2.46W (TA=25°C). The SI4178DY-T1-GE3 has an RDS(on) figure of 0.044O (VGS=10V and ID=7A) and a gate-source capacitance of 12.5nF (f=1MHz). It is designed for use in a variety of applications such as motor drives, switching and DC/DC converters, PWM motor controls, etc.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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