X-On Electronics has gained recognition as a prominent supplier of SI4178DY-T1-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI4178DY-T1-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SI4178DY-T1-GE3 Vishay

SI4178DY-T1-GE3 electronic component of Vishay
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See Product Specifications
Part No.SI4178DY-T1-GE3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET 30V Vds 25V Vgs SO-8
Datasheet: SI4178DY-T1-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.3861 ea
Line Total: USD 0.39 
Availability - 4408
Ship by Wed. 01 Jan to Mon. 06 Jan
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1624
Ship by Wed. 25 Dec to Tue. 31 Dec
MOQ : 1
Multiples : 1
1 : USD 0.4064
10 : USD 0.3913
25 : USD 0.3905
100 : USD 0.3249
250 : USD 0.3216
500 : USD 0.2879
1000 : USD 0.228

2425
Ship by Wed. 25 Dec to Tue. 31 Dec
MOQ : 2500
Multiples : 2500
2500 : USD 0.2301
5000 : USD 0.2275
7500 : USD 0.2249
10000 : USD 0.2236
12500 : USD 0.221

4408
Ship by Wed. 01 Jan to Mon. 06 Jan
MOQ : 1
Multiples : 1
1 : USD 0.3861
10 : USD 0.3074
30 : USD 0.2745
100 : USD 0.2306
500 : USD 0.2123
1000 : USD 0.2013

2416
Ship by Mon. 23 Dec to Wed. 25 Dec
MOQ : 1
Multiples : 1
1 : USD 0.938
10 : USD 0.6342
50 : USD 0.546
52 : USD 0.336
141 : USD 0.3178

1624
Ship by Wed. 25 Dec to Tue. 31 Dec
MOQ : 33
Multiples : 1
33 : USD 0.3905
100 : USD 0.3249
250 : USD 0.3216
500 : USD 0.2879
1000 : USD 0.228

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Height
Length
Series
Transistor Type
Width
Brand
Forward Transconductance - Min
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the SI4178DY-T1-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI4178DY-T1-GE3 and other electronic components in the MOSFETs category and beyond.

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The SI4178DY-T1-GE3 is a Dual N-Channel Enhancement Mode Field-Effect Transistor (MOSFET) manufactured by Vishay. It has an operating voltage of 30V and a gate threshold voltage of 25V with a package size of SO-8. It is rated for a maximum power dissipation of 2.46W (TA=25°C). The SI4178DY-T1-GE3 has an RDS(on) figure of 0.044O (VGS=10V and ID=7A) and a gate-source capacitance of 12.5nF (f=1MHz). It is designed for use in a variety of applications such as motor drives, switching and DC/DC converters, PWM motor controls, etc.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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