New Product Si4190ADY Vishay Siliconix N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET a V (V) R () Max. I (A) Q (Typ.) DS DS(on) D g 100 % R and UIS Tested g 0.0088 at V = 10 V 18.4 Material categorization: GS For definitions of compliance please see 100 0.0094 at V = 7.5 V 17.8 20.7 nC GS www.vishay.com/doc 99912 0.0120 at V = 4.5 V 15.8 GS APPLICATIONS SO-8 D DC/DC Primary Side Switch SD 1 8 Telecom/Server Industrial SD 2 7 SD 3 6 G GD 4 5 Top View S Ordering Information: N-Channel MOSFET Si4190ADY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol Limit Unit Drain-Source Voltage V 100 DS V V Gate-Source Voltage 20 GS T = 25 C 18.4 C T = 70 C 14.6 C Continuous Drain Current (T = 150 C) I J D b, c T = 25 C 13 A b, c T = 70 C 10.3 A A I Pulsed Drain Current (t = 300 s) 70 DM T = 25 C 5.4 C Continuous Source-Drain Diode Current I S b, c = 25 C 2.7 T A Single Pulse Avalanche Current I 30 AS L = 0.1 mH Avalanche Energy E 45 mJ AS T = 25 C 6 C T = 70 C 3.8 C Maximum Power Dissipation P W D b, c T = 25 C 3 A b, c T = 70 C 1.9 A Operating Junction and Storage Temperature Range T , T - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, d Maximum Junction-to-Ambient t 10 s R 33 42 thJA C/W R Maximum Junction-to-Foot (Drain) Steady State 16 21 thJF Notes: a. Based on T = 25 C. C b. Surface mounted on 1 x 1 FR4 board. c. t = 10 s. d. Maximum under steady state conditions is 85 C/W. Document Number: 63826 For technical support, please contact: pmostechsupport vishay.com www.vishay.com S12-0541-Rev. A, 12-Mar-12 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000New Product Si4190ADY Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J Parameter Symbol Test Conditions Min. Typ.Max.Unit Static V V = 0 V, I = 250 A Drain-Source Breakdown Voltage 100 V DS GS D V Temperature Coefficient V /T 64 DS DS J I = 250 A mV/C D V Temperature Coefficient V /T - 5.8 GS(th) GS(th) J V = V , I = 250 A Gate-Source Threshold Voltage V 1.5 2.8 V GS(th) DS GS D I V = 0 V, V = 20 V Gate-Source Leakage 100 nA GSS DS GS V = 100 V, V = 0 V 1 DS GS I Zero Gate Voltage Drain Current A DSS V = 100 V, V = 0 V, T = 55 C 10 DS GS J a I V 5 V, V = 10 V 30 A On-State Drain Current D(on) DS GS V 10 V, I = 15 A 0.0073 0.0088 GS D a R V 7.5 V, I = 12 A 0.0078 0.0094 Drain-Source On-State Resistance DS(on) GS D V 4.5 V, I = 10 A 0.0096 0.0120 GS D a g V = 15 V, I = 15 A 54 S Forward Transconductance fs DS D b Dynamic C Input Capacitance 1970 iss Output Capacitance C V = 50 V, V = 0 V, f = 1 MHz 695 pF oss DS GS C Reverse Transfer Capacitance 62 rss V = 50 V, V = 10 V, I = 10 A 44.4 67 DS GS D Total Gate Charge Q g 20.7 31 Q Gate-Source Charge V = 50 V, V = 4.5 V, I = 10 A 6.1 gs nC DS GS D Gate-Drain Charge Q 9.1 gd Q V = 50 V, V = 0 V Output Charge 56 85 oss DS GS R Gate Resistance f = 1 MHz 0.4 1.1 2.2 g t Turn-On Delay Time 15 30 d(on) t Rise Time V = 50 V, R = 5 11 22 r DD L I 10 A, V = 7.5 V, R = 1 t Turn-Off Delay Time D GEN g 31 60 d(off) t Fall Time 10 20 f ns t Turn-On Delay Time 12 24 d(on) t Rise Time V = 50 V, R = 5 10 20 r DD L I 10 A, V = 10 V, R = 1 Turn-Off Delay Time t 34 65 D GEN g d(off) t Fall Time 10 20 f Drain-Source Body Diode Characteristics I T = 25 C Continuous Source-Drain Diode Current 5.4 S C A a I 70 Pulse Diode Forward Current SM V I = 5 A Body Diode Voltage 0.76 1.1 V SD S t Body Diode Reverse Recovery Time 42 80 ns rr Q Body Diode Reverse Recovery Charge 40 80 nC rr I = 10 A, di/dt = 100 A/s, T = 25 C F J t Reverse Recovery Fall Time 19 a ns t Reverse Recovery Rise Time 23 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 % b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com For technical support, please contact: pmostechsupport vishay.com Document Number: 63826 2 S12-0541-Rev. A, 12-Mar-12 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000