X-On Electronics has gained recognition as a prominent supplier of SI4214DDY-T1-GE3 MOSFET across the USA, India, Europe, Australia, and various other global locations. SI4214DDY-T1-GE3 MOSFET are a product manufactured by Vishay. We provide cost-effective solutions for MOSFET, ensuring timely deliveries around the world.

SI4214DDY-T1-GE3 Vishay

SI4214DDY-T1-GE3 electronic component of Vishay
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See Product Specifications
Part No.SI4214DDY-T1-GE3
Manufacturer: Vishay
Category: MOSFET
Description: Mosfet Array 2 N-Channel (Dual) 30V 8.5A 3.1W Surface Mount 8-SOIC
Datasheet: SI4214DDY-T1-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.6417 ea
Line Total: USD 0.64

Availability - 13995
Ship by Thu. 08 Aug to Mon. 12 Aug
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2425
Ship by Fri. 02 Aug to Thu. 08 Aug
MOQ : 2500
Multiples : 2500
2500 : USD 0.2665
5000 : USD 0.2665
7500 : USD 0.2665
10000 : USD 0.2665
12500 : USD 0.2665

2518
Ship by Fri. 09 Aug to Wed. 14 Aug
MOQ : 1
Multiples : 1
1 : USD 0.5795
10 : USD 0.4633
30 : USD 0.4127
100 : USD 0.3488
500 : USD 0.3207
1000 : USD 0.3039

13995
Ship by Thu. 08 Aug to Mon. 12 Aug
MOQ : 1
Multiples : 1
1 : USD 0.6417
10 : USD 0.5577
100 : USD 0.3956
500 : USD 0.3404
1000 : USD 0.2979
2500 : USD 0.2622
5000 : USD 0.2587
10000 : USD 0.2507
25000 : USD 0.2449

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Factory Pack Quantity :
Height
Length
Series
Transistor Type
Width
Forward Transconductance - Min
Cnhts
Fall Time
Hts Code
Mxhts
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Subcategory
Taric
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Typical Turn-On Delay Time
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We are delighted to provide the SI4214DDY-T1-GE3 from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI4214DDY-T1-GE3 and other electronic components in the MOSFET category and beyond.

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The Vishay SI4214DDY-T1-GE3 is a Mosfet array 2 N-Channel (dual) 30V 8.5A 3.1W surface mount 8-SOIC packaged device. It is designed to provide high reliability when used in demanding applications such as automotive, industrial, medical, and home appliance applications. The device features a high-speed switching operation with up to 8.5A at 30V, as well as low gate charge and fast switch times. This device is constructed in a 8-SOIC surface mount package, safeguarding against shock and vibration while also reducing the footprint when mounted on a PCB. The device is designed to handle operation at -40°C to 150°C and holds up to 3000V Human Body Model (HBM) ESD protection.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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