New Product Si4214DY Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 a V (V) R () Q (Typ.) I (A) DS DS(on) g D Definition 0.0235 at V = 10 V 8.5 TrenchFET Power MOSFET GS 30 6.7 100 % R Tested 0.028 at V = 4.5 V g 7.8 GS 100 % UIS Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS PC System Power Low Current DC/DC D D 1 2 SO-8 S D 1 1 8 1 G D 1 2 7 1 S D 2 3 6 2 G G 1 2 G D 2 4 5 2 Top View S S 1 2 Ordering Information: Si4214DY-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol Limit Unit Drain-Source Voltage V 30 DS V Gate-Source Voltage V 20 GS T = 25 C 8.5 C T = 70 C 6.8 C Continuous Drain Current (T = 150 C) I J D b, c T = 25 C A 6.8 b, c T = 70 C A 5.4 Pulsed Drain Current I A 30 DM Source-Drain Current Diode Current T = 25 C 2.8 C I S b, c T = 25 C A 1.8 Pulsed Source-Drain Current I 30 SM Single Pulse Avalanche Current I 10 AS L = 0.1 mH Single Pulse Avalanche Energy E mJ 5 AS T = 25 C 3.1 C T = 70 C 2.0 C Maximum Power Dissipation P W D b, c T = 25 C A 2.0 b, c T = 70 C A 1.25 Operating Junction and Storage Temperature Range T , T - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol Typ. Max. Unit b, d R t 10 s 52 62.5 Maximum Junction-to-Ambient thJA C/W Maximum Junction-to-Foot (Drain) Steady-State R 30 40 thJF Notes: a. Based on T = 25 C. C b. Surface Mounted on 1 x 1 FR4 board. c. t = 10 s. d. Maximum under steady state conditions is 110 C/W. Document Number: 64726 www.vishay.com S09-1223-Rev. B, 29-Jun-09 1New Product Si4214DY Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min. Typ. Max. Unit Static V V = 0 V, I = 250 A Drain-Source Breakdown Voltage 30 V DS GS D V Temperature Coefficient V /T I = 250 A 3.5 DS DS J D mV/C V Temperature Coefficient V /T I = 250 A - 6.2 GS(th) GS(th) J D V V = V , I = 250 A Gate Threshold Voltage 1.2 2.5 V GS(th) DS GS D I V = 0 V, V = 20 V Gate-Body Leakage 100 nA GSS DS GS V = 30 V, V = 0 V 1 DS GS Zero Gate Voltage Drain Current I A DSS V = 30 V, V = 0 V, TJ = 55 C 10 DS GS b I V = 5 V, V = 10 V 20 A On -State Drain Current D(on) DS GS V = 10 V, I = 7 A 0.0195 0.0235 GS D b R Drain-Source On-State Resistance DS(on) V = 4.5 V, I = 5 A 0.023 0.028 GS D b g V = 15 V, I = 7 A 35 S Forward Transconductance fs DS D a Dynamic C Input Capacitance 785 iss N-Channel Output Capacitance C 125 pF oss V = 15 V, V = 0 V, I = 1 MHz DS GS D C Reverse Transfer Capacitance 53 rss V = 15 V, V = 10 V, I = 8 A 15 23 DS GS D Total Gate Charge Q g 6.7 10.5 N-Channel Q Gate-Source Charge 2.8 nC gs V = 15 V, V = 4.5 V, I = 8 A DS GS D Q Gate-Drain Charge 2.0 gd R Gate Resistance f = 1 MHz 0.4 2.1 4.2 g t Turn-On Delay Time 13 25 d(on) N-Channel t Rise Time 11 22 r V = 15 V, R = 3 DD L t Turn-Off Delay Time 18 35 d(off) I 5 A, V = 4.5 V, R = 1 D GEN g Fall Time t 918 f ns t Turn-On Delay Time 714 d(on) N-Channel Rise Time t 918 r V = 15 V, R = 3 DD L t Turn-Off Delay Time 16 30 d(off) I 5 A, V = 4.5 V, R = 1 D GEN g Fall Time t 816 f Drain-Source Body Diode Characteristics I T = 25 C Continuous Source-Drain Diode Current 2.8 S C A a I 30 Pulse Diode Forward Current SM Body Diode Voltage V I = 1.8 A 0.77 1.1 V SD S t Body Diode Reverse Recovery Time 35 60 ns rr Body Diode Reverse Recovery Charge Q 40 70 nC N-Channel rr I = 2.2 A, dI/dt = 100 A/s, T = 25 C t F J Reverse Recovery Fall Time 19 a nS Reverse Recovery Rise Time t 16 b Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 64726 2 S09-1223-Rev. B, 29-Jun-09