Si4154DY www.vishay.com Vishay Siliconix N-Channel 40 V (D-S) MOSFET FEATURES SO-8 Single D TrenchFET power MOSFET D 5 6 D 100 % R and UIS tested g 7 D 8 Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 4 G 33 APPLICATIONS D SS 22 11 SS POL S Top View Synchronous rectification PRODUCT SUMMARY G V (V) 40 DS R max. ( ) at V = 10 V 0.0033 DS(on) GS R max. ( ) at V = 4.5 V 0.0039 DS(on) GS S Q typ. (nC) 32.5 g N-Channel MOSFET a I (A) 36 D Configuration Single ORDERING INFORMATION Package SO-8 Lead (Pb)-free and halogen-free Si4154DY-T1-GE3 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A PARAMETER SYMBOL LIMIT UNIT Drain-source voltage V 40 V DS Gate-source voltage V 20 GS T = 25 C 36 C T = 70 C 26 C Continuous drain current (T = 150 C) I J D b, c T = 25 C 24 A b, c T = 70 C 19 A A Pulsed drain current I 70 DM T = 25 C 7 C Continuous source-drain diode current I S b, c T = 25 C 3.1 A Single pulse avalanche current I 40 AS L = 0.1 mH Avalanche energy E 80 mJ AS T = 25 C 7.8 C T = 70 C 5 C Maximum power dissipation P W D b, c T = 25 C 3.5 A b, c T = 70 C 2.2 A Operating junction and storage temperature range T , T -55 to +150 C J stg THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYPICALMAXIMUMUNIT b, d Maximum junction-to-ambient t 10 s R 29 35 thJA C/W Maximum junction-to-foot (drain) Steady state R 13 16 thJF Notes a. Based on T = 25 C C b. Surface mounted on 1 x 1 FR4 board c. t = 10 s d. Maximum under steady state conditions is 80 C/W S09-0998-Rev. A, 01-Jun-09 Document Number: 65000 1 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 Si4154DY www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP.MAX.UNIT Static Drain-source breakdown voltage V V = 0 V, I = 250 A 40 - - V DS GS D V temperature coefficient V /T -45 - DS DS J I = 250 A mV/C D V temperature coefficient V /T --5.6- GS(th) GS(th) J Gate-source threshold voltage V V = V , I = 250 A 1 - 2.5 V GS(th) DS GS D Gate-source leakage I V = 0 V, V = 20 V - - 100 nA GSS DS GS V = 40 V, V = 0 V - - 1 DS GS Zero gate voltage drain current I A DSS V = 40 V, V = 0 V, T = 55 C - - 10 DS GS J a On-state drain current I V 5 V, V = 10 V 30 - - A D(on) DS GS V = 10 V, I = 15 A - 0.0027 0.0033 GS D a Drain-source on-state resistance R DS(on) V = 4.5 V, I = 10 A - 0.0032 0.0039 GS D a Forward transconductance g V = 15 V, I = 15 A - 75 S fs DS D b Dynamic Input capacitance C - 4230 - iss Output capacitance C -V = 20 V, V = 0 V, f = 1 MHz570- pF oss DS GS Reverse transfer capacitance C -220- rss V = 20 V, V = 10 V, I = 20 A - 70 105 DS GS D Total gate charge Q g - 32.5 49 nC Gate-source charge Q -9V = 20 V, V = 4.5 V, I = 20 A.7- DS GS D gs Gate-drain charge Q -8.6 - gd Gate resistance R f = 1 MHz 0.3 1.25 2.5 g Turn-on delay time t -25 50 d(on) Rise time t -70120 V = 20 V, R = 2 r DD L I 10 A, V = 4.5 V, R = 1 D GEN g Turn-off delay time t -5190 d(off) Fall time t -35 60 f ns Turn-on delay time t -10 20 d(on) Rise time t -918 V = 20 V, R = 2 r DD L I 10 A, V = 10 V, R = 1 D GEN g Turn-off delay time t -3560 d(off) Fall time t -7 14 f Drain-Source Body Diode Characteristics Continuous source-drain diode current I T = 25 C - - 7 S C A a Pulse diode forward current I -- 70 SM Body diode voltage V I = 3 A - 0.71 1.1 V SD S Body diode reverse recovery time t -33 65 ns rr Body diode reverse recovery charge Q -29 56 nC rr I = 10 A, di/dt = 100 A/s, F T = 25 C J Reverse recovery fall time t -17 - a ns Reverse recovery rise time t -16 - b Notes a. Pulse test pulse width 300 s, duty cycle 2 % b. Guaranteed by design, not subject to production testing Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S09-0998-Rev. A, 01-Jun-09 Document Number: 65000 2 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000