X-On Electronics has gained recognition as a prominent supplier of SIRA52DP-T1-GE3 MOSFET across the USA, India, Europe, Australia, and various other global locations. SIRA52DP-T1-GE3 MOSFET are a product manufactured by Vishay. We provide cost-effective solutions for MOSFET, ensuring timely deliveries around the world.

SIRA52DP-T1-GE3 Vishay

SIRA52DP-T1-GE3 electronic component of Vishay
Images are for reference only
See Product Specifications
Part No.SIRA52DP-T1-GE3
Manufacturer: Vishay
Category: MOSFET
Description: MOSFET 40V Vds 60A Id 0.0017Vgs Rds(On)
Datasheet: SIRA52DP-T1-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.569 ea
Line Total: USD 1.57

Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Thu. 01 Aug to Wed. 07 Aug
MOQ : 6000
Multiples : 3000
6000 : USD 0.6416
9000 : USD 0.5821

0
Ship by Thu. 08 Aug to Tue. 13 Aug
MOQ : 1
Multiples : 1
1 : USD 1.569

0
Ship by Wed. 07 Aug to Fri. 09 Aug
MOQ : 1
Multiples : 1
1 : USD 1.288
10 : USD 1.0821
100 : USD 0.859
500 : USD 0.7498
1000 : USD 0.6279
3000 : USD 0.598

0
Ship by Thu. 01 Aug to Wed. 07 Aug
MOQ : 12
Multiples : 1
12 : USD 1.2956
25 : USD 1.024
100 : USD 0.8031
250 : USD 0.7461
500 : USD 0.7385
1000 : USD 0.6959

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Series
Transistor Type
Brand
Forward Transconductance - Min
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the SIRA52DP-T1-GE3 from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SIRA52DP-T1-GE3 and other electronic components in the MOSFET category and beyond.

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The Vishay SIRA52DP-T1-GE3 is a MOSFET (metal oxide semiconductor field-effect transistor) with a 40V Vds (drain-to-source voltage), 60A Id (drain current), 0.0017Vgs (gate-to-source voltage) and Rds(On) (on-state resistance). It has a 500V breakdown voltage and a 5V maximum gate voltage. It is designed to provide the best performance when used in a low-side switch-mode application. With a low Rds(On), this device can offer extremely low on-state resistance with minimal power loss. Additionally, its fast switching speed and low threshold voltage make it an ideal choice for a wide variety of applications.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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