SiS427EDN Vishay Siliconix P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET d, g V (V) R () Max. I (A) Q (Typ.) 100 % R and UIS Tested DS DS(on) D g g d Typical ESD Performance: 2500 V (HBM) 0.0106 at V = - 10 V - 50 GS Material categorization: - 30 0.0160 at V = - 6 V - 42.1 22.6 nC GS For definitions of compliance please see 0.0213 at V = - 4.5 V - 31.3 GS www.vishay.com/doc 99912 PowerPAK 1212-8 APPLICATIONS S Notebook Battery Charging S 3.30 mm 3.30 mm 1 S Notebook Adapter Switch 2 S 3 Load Switch/Power Management G 4 for Mobile Computing D G 8 D 7 D 6 D 5 Bottom View D Ordering Information: P-Channel MOSFET SiS427EDN-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol Limit Unit V Drain-Source Voltage - 30 DS V V 25 Gate-Source Voltage GS d T = 25 C - 50 C T = 70 C - 44.3 C Continuous Drain Current (T = 150 C) I J D a, b T = 25 C - 15 A a, b T = 70 C - 12 A A I Pulsed Drain Current (t = 100 s) - 110 DM T = 25 C - 43 C I Continuous Source-Drain Diode Current S a, b T = 25 C - 3.1 A I Avalanche Current - 25 AS L = 0.1 mH E Single-Pulse Avalanche Energy 31.25 mJ AS T = 25 C 52 C T = 70 C 33 C Maximum Power Dissipation P W D a, b T = 25 C 3.7 A a, b T = 70 C 2.4 A T , T Operating Junction and Storage Temperature Range - 55 to 150 J stg C e, f 260 Soldering Recommendations (Peak Temperature) THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit a, c Maximum Junction-to-Ambient t 10 s R 26 33 thJA C/W Maximum Junction-to-Case Steady State R 1.9 2.4 thJC Notes: a. Surface mounted on 1 x 1 FR4 board. b. t = 10 s. c. Maximum under steady state conditions is 81 C/W. d. Package limited. e. See solder profile (www.vishay.com/doc 73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. f. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. g. Based on T = 25 C. C Document Number: 62856 For technical questions, contact: pmostechsupport vishay.com www.vishay.com S13-1164-Rev. A, 13-May-13 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000SiS427EDN Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J Parameter Symbol Test Conditions Min. Typ.Max.Unit Static Drain-Source Breakdown Voltage V V = 0 V, I = - 250 A - 30 V DS GS D V Temperature Coefficient V /T - 21 DS DS J I = - 250 A mV/C D V Temperature Coefficient V /T 4.8 GS(th) GS(th) J Gate-Source Threshold Voltage V V = V , I = - 250 A - 1.2 - 2.5 V GS(th) DS GS D V = 0 V, V = 25 V 250 DS GS Gate-Source Leakage I GSS V = 0 V, V = 20 V 10 DS GS A V = - 30 V, V = 0 V - 1 DS GS Zero Gate Voltage Drain Current I DSS V = - 30 V, V = 0 V, T = 55 C - 5 DS GS J a I V - 10 V, V = - 10 V - 30 A On-State Drain Current D(on) DS GS V = - 10 V, I = - 11 A 0.0088 0.0106 GS D a R V = - 6 V, I = - 7 A 0.0133 0.0160 Drain-Source On-State Resistance DS(on) GS D V = - 4.5 V, I = - 7 A 0.0177 0.0213 GS D a g V = - 15 V, I = - 11 A 32 S Forward Transconductance fs DS D b Dynamic C Input Capacitance 1930 iss C V = - 15 V, V = 0 V, f = 1 MHz Output Capacitance 410 pF oss DS GS C Reverse Transfer Capacitance 355 rss V = - 15 V, V = - 10 V, I = - 15 A 43.5 66 DS GS D Q Total Gate Charge g 22.6 34 nC Q V = - 15 V, V = - 4.5 V, I = - 15 A Gate-Source Charge 6 gs DS GS D Q Gate-Drain Charge 11 gd R Gate Resistance f = 1 MHz 0.2 1.2 2.4 g t Turn-On Delay Time 11 22 d(on) t V = - 15 V, R = 1.25 Rise Time 13 20 r DD L t I - 12 A, V = - 10 V, R = 1 Turn-Off DelayTime 26 40 d(off) D GEN g t Fall Time 714 f ns t Turn-On Delay Time 45 68 d(on) t V = - 15 V, R = 1.25 Rise Time 40 60 r DD L t I - 12 A, V = - 4.5 V, R = 1 Turn-Off DelayTime 28 42 d(off) D GEN g t Fall Time 12 22 f Drain-Source Body Diode Characteristics Continous Source-Drain Diode Current I T = 25 C - 50 S C A c Pulse Diode Forward Current I - 110 SM Body Diode Voltage V I = - 12 A, V = 0 V - 0.8 - 1.2 V SD S GS Body Diode Reverse Recovery Time t 22 33 ns rr Body Diode Reverse Recovery Charge Q 14 21 nC I = - 12 A, dI/dt = 100 A/s, rr F T = 25 C Reverse Recovery Fall Time t 13 J a ns Reverse Recovery Rise Time t 9 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. t = 100 s Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com For technical questions, contact: pmostechsupport vishay.com Document Number: 62856 2 S13-1164-Rev. A, 13-May-13 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000