X-On Electronics has gained recognition as a prominent supplier of SI4090DY-T1-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI4090DY-T1-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SI4090DY-T1-GE3 Vishay

SI4090DY-T1-GE3 electronic component of Vishay
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Part No.SI4090DY-T1-GE3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET 100V 10mOhm@10V 19.7A N-Ch MV T-FET
Datasheet: SI4090DY-T1-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
2500: USD 0.676 ea
Line Total: USD 1690 
Availability - 2425
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ: 2500  Multiples: 2500
Pack Size: 2500
Availability Price Quantity
2425
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 1
Multiples : 1
1 : USD 1.824
10 : USD 1.504
25 : USD 1.4476
100 : USD 1.1755
250 : USD 1.1691
500 : USD 0.9992
1000 : USD 0.7503

2425
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 2500
Multiples : 2500
2500 : USD 0.676
5000 : USD 0.676
7500 : USD 0.676

176
Ship by Mon. 09 Dec to Thu. 12 Dec
MOQ : 1
Multiples : 1
1 : USD 2.0478
10 : USD 1.6279
30 : USD 1.4477
100 : USD 1.2232
500 : USD 1.123
1000 : USD 1.0631

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Power Dissipation
Rds On
Factory Pack Quantity :
Series
Transistor Type
Forward Transconductance - Min
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the SI4090DY-T1-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI4090DY-T1-GE3 and other electronic components in the MOSFETs category and beyond.

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New Product Si4090DY Vishay Siliconix N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET a V (V) R () Max. I (A) Q (Typ.) DS DS(on) D g 100 % R and UIS Tested g 0.0100 at V = 10 V 19.7 Material categorization: GS For definitions of compliance please see 100 0.0105 at V = 7.5 V 19.2 27.9 nC GS www.vishay.com/doc 99912 0.0120 at V = 6.0 V 18 GS APPLICATIONS SO-8 D DC/DC Primary Side Switch Telecom/Server SD 1 8 Motor Drive Control SD 2 7 Synchronous Rectification SD 3 6 G GD 4 5 Top View S Ordering Information: Si4090DY-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol Limit Unit V Drain-Source Voltage 100 DS V Gate-Source Voltage V 20 GS T = 25 C 19.7 C T = 70 C 15.8 C Continuous Drain Current (T = 150 C) I J D b, c T = 25 C 13.2 A b, c T = 70 C 10.4 A A Pulsed Drain Current (t = 300 s) I 70 DM T = 25 C 7 C Continuous Source-Drain Diode Current I S b, c T = 25 C 3.1 A Single Pulse Avalanche Current I 30 AS L = 0.1 mH Avalanche Energy E 45 mJ AS T = 25 C 7.8 C T = 70 C 5 C Maximum Power Dissipation P W D b, c T = 25 C 3.5 A b, c T = 70 C 2.2 A Operating Junction and Storage Temperature Range T , T - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, d Maximum Junction-to-Ambient t 10 s R 29 35 thJA C/W R 13 16 Maximum Junction-to-Foot (Drain) Steady State thJF Notes: a. Based on T = 25 C. C b. Surface mounted on 1 x 1 FR4 board. c. t = 10 s. d. Maximum under steady state conditions is 80 C/W. Document Number: 63917 For technical support, please contact: pmostechsupport vishay.com www.vishay.com S12-1135-Rev. A, 21-May-12 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000New Product Si4090DY Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J Parameter Symbol Test Conditions Min. Typ.Max.Unit Static V V = 0 V, I = 250 A Drain-Source Breakdown Voltage 100 V DS GS D V Temperature Coefficient V /T 67 DS DS J I = 250 A mV/C D V Temperature Coefficient V /T - 6.4 GS(th) GS(th) J V = V , I = 250 A Gate-Source Threshold Voltage V 23.3V GS(th) DS GS D I V = 0 V, V = 20 V Gate-Source Leakage 100 nA GSS DS GS V = 100 V, V = 0 V 1 DS GS I Zero Gate Voltage Drain Current A DSS V = 100 V, V = 0 V, T = 55 C 10 DS GS J a I V 5 V, V = 10 V 30 A On-State Drain Current D(on) DS GS V 10 V, I = 15 A 0.0080 0.0100 GS D a R V 7.5 V, I = 12 A 0.0085 0.0105 Drain-Source On-State Resistance DS(on) GS D V 6.0 V, I = 10 A 0.0090 0.0120 GS D a g V = 15 V, I = 15 A 54 S Forward Transconductance fs DS D b Dynamic C Input Capacitance 2410 iss Output Capacitance C V = 50 V, V = 0 V, f = 1 MHz 790 pF oss DS GS C Reverse Transfer Capacitance 60 rss V = 50 V, V = 10 V, I = 10 A 45.6 69 DS GS D Total Gate Charge Q g 27.9 42 Q Gate-Source Charge V = 50 V, V = 6 V, I = 10 A 8.5 gs nC DS GS D Gate-Drain Charge Q 9.2 gd Q V = 50 V, V = 0 V Output Charge 63 95 oss DS GS R Gate Resistance f = 1 MHz 0.4 1.3 2.6 g t Turn-On Delay Time 16 32 d(on) t Rise Time V = 50 V, R = 5 11 22 r DD L I 10 A, V = 7.5 V, R = 1 t Turn-Off Delay Time D GEN g 35 70 d(off) t Fall Time 10 20 f ns t Turn-On Delay Time 14 28 d(on) t Rise Time V = 50 V, R = 5 10 20 r DD L I 10 A, V = 10 V, R = 1 Turn-Off Delay Time t 36 70 D GEN g d(off) t Fall Time 10 20 f Drain-Source Body Diode Characteristics I T = 25 C Continuous Source-Drain Diode Current 7 S C A a I 70 Pulse Diode Forward Current SM V I = 5 A Body Diode Voltage 0.75 1.1 V SD S t Body Diode Reverse Recovery Time 49 95 ns rr Q Body Diode Reverse Recovery Charge 58 115 nC rr I = 10 A, di/dt = 100 A/s, T = 25 C F J t Reverse Recovery Fall Time 21 a ns t Reverse Recovery Rise Time 28 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 % b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com For technical support, please contact: pmostechsupport vishay.com Document Number: 63917 2 S12-1135-Rev. A, 21-May-12 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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