New Product Si4090DY Vishay Siliconix N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET a V (V) R () Max. I (A) Q (Typ.) DS DS(on) D g 100 % R and UIS Tested g 0.0100 at V = 10 V 19.7 Material categorization: GS For definitions of compliance please see 100 0.0105 at V = 7.5 V 19.2 27.9 nC GS www.vishay.com/doc 99912 0.0120 at V = 6.0 V 18 GS APPLICATIONS SO-8 D DC/DC Primary Side Switch Telecom/Server SD 1 8 Motor Drive Control SD 2 7 Synchronous Rectification SD 3 6 G GD 4 5 Top View S Ordering Information: Si4090DY-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol Limit Unit V Drain-Source Voltage 100 DS V Gate-Source Voltage V 20 GS T = 25 C 19.7 C T = 70 C 15.8 C Continuous Drain Current (T = 150 C) I J D b, c T = 25 C 13.2 A b, c T = 70 C 10.4 A A Pulsed Drain Current (t = 300 s) I 70 DM T = 25 C 7 C Continuous Source-Drain Diode Current I S b, c T = 25 C 3.1 A Single Pulse Avalanche Current I 30 AS L = 0.1 mH Avalanche Energy E 45 mJ AS T = 25 C 7.8 C T = 70 C 5 C Maximum Power Dissipation P W D b, c T = 25 C 3.5 A b, c T = 70 C 2.2 A Operating Junction and Storage Temperature Range T , T - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, d Maximum Junction-to-Ambient t 10 s R 29 35 thJA C/W R 13 16 Maximum Junction-to-Foot (Drain) Steady State thJF Notes: a. Based on T = 25 C. C b. Surface mounted on 1 x 1 FR4 board. c. t = 10 s. d. Maximum under steady state conditions is 80 C/W. Document Number: 63917 For technical support, please contact: pmostechsupport vishay.com www.vishay.com S12-1135-Rev. A, 21-May-12 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000New Product Si4090DY Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J Parameter Symbol Test Conditions Min. Typ.Max.Unit Static V V = 0 V, I = 250 A Drain-Source Breakdown Voltage 100 V DS GS D V Temperature Coefficient V /T 67 DS DS J I = 250 A mV/C D V Temperature Coefficient V /T - 6.4 GS(th) GS(th) J V = V , I = 250 A Gate-Source Threshold Voltage V 23.3V GS(th) DS GS D I V = 0 V, V = 20 V Gate-Source Leakage 100 nA GSS DS GS V = 100 V, V = 0 V 1 DS GS I Zero Gate Voltage Drain Current A DSS V = 100 V, V = 0 V, T = 55 C 10 DS GS J a I V 5 V, V = 10 V 30 A On-State Drain Current D(on) DS GS V 10 V, I = 15 A 0.0080 0.0100 GS D a R V 7.5 V, I = 12 A 0.0085 0.0105 Drain-Source On-State Resistance DS(on) GS D V 6.0 V, I = 10 A 0.0090 0.0120 GS D a g V = 15 V, I = 15 A 54 S Forward Transconductance fs DS D b Dynamic C Input Capacitance 2410 iss Output Capacitance C V = 50 V, V = 0 V, f = 1 MHz 790 pF oss DS GS C Reverse Transfer Capacitance 60 rss V = 50 V, V = 10 V, I = 10 A 45.6 69 DS GS D Total Gate Charge Q g 27.9 42 Q Gate-Source Charge V = 50 V, V = 6 V, I = 10 A 8.5 gs nC DS GS D Gate-Drain Charge Q 9.2 gd Q V = 50 V, V = 0 V Output Charge 63 95 oss DS GS R Gate Resistance f = 1 MHz 0.4 1.3 2.6 g t Turn-On Delay Time 16 32 d(on) t Rise Time V = 50 V, R = 5 11 22 r DD L I 10 A, V = 7.5 V, R = 1 t Turn-Off Delay Time D GEN g 35 70 d(off) t Fall Time 10 20 f ns t Turn-On Delay Time 14 28 d(on) t Rise Time V = 50 V, R = 5 10 20 r DD L I 10 A, V = 10 V, R = 1 Turn-Off Delay Time t 36 70 D GEN g d(off) t Fall Time 10 20 f Drain-Source Body Diode Characteristics I T = 25 C Continuous Source-Drain Diode Current 7 S C A a I 70 Pulse Diode Forward Current SM V I = 5 A Body Diode Voltage 0.75 1.1 V SD S t Body Diode Reverse Recovery Time 49 95 ns rr Q Body Diode Reverse Recovery Charge 58 115 nC rr I = 10 A, di/dt = 100 A/s, T = 25 C F J t Reverse Recovery Fall Time 21 a ns t Reverse Recovery Rise Time 28 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 % b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com For technical support, please contact: pmostechsupport vishay.com Document Number: 63917 2 S12-1135-Rev. A, 21-May-12 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000