New Product Si4116DY Vishay Siliconix N-Channel 25-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 a V (V) R () Q (Typ.) I (A) DS DS(on) g D Available 0.0086 at V = 10 V 18 TrenchFET Power MOSFET GS 100 % R and UIS Tested 0.0095 at V = 4.5 V g 25 17 17.5 nC GS 0.0115 at V = 2.5 V 15.5 GS APPLICATIONS Synchronous Buck - Low Side SO-8 D SD 1 8 SD 2 7 SD 3 6 GD 4 5 G Top View S Ordering Information: Si4116DY-T1-E3 (Lead (Pb)-free) Si4116DY-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol Limit Unit V Drain-Source Voltage 25 DS V V Gate-Source Voltage 12 GS T = 25 C 18 C T = 70 C 14.3 C Continuous Drain Current (T = 150 C) I J D b, c T = 25 C A 12.7 b, c T = 70 C A 10.1 A I Pulsed Drain Current 50 DM T = 25 C 4.5 C Continuous Source-Drain Diode Current I S b, c T = 25 C A 2.2 I Single Pulse Avalanche Current 20 AS L = 0.1 mH E mJ Avalanche Energy 20 AS T = 25 C 5 C T = 70 C 3.2 C P Maximum Power Dissipation W D b, c T = 25 C A 2.5 b, c T = 70 C A 1.6 T , T Operating Junction and Storage Temperature Range - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, d t 10 s R 43 50 Maximum Junction-to-Ambient thJA C/W R Maximum Junction-to-Foot (Drain) Steady State 19 25 thJF Notes: a. Based on T = 25 C. C b. Surface Mounted on 1 x 1 FR4 board. c. t = 10 s. d. Maximum under Steady State conditions is 95 C/W. Document Number: 69837 www.vishay.com S-83046-Rev. C, 22-Dec-08 1New Product Si4116DY Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min. Typ.Max.Unit Static V V = 0 V, I = 250 A Drain-Source Breakdown Voltage 25 V DS GS D V Temperature Coefficient V /T 30 DS DS J I = 250 A mV/C D V Temperature Coefficient V /T - 4.0 GS(th) GS(th) J V V = V , I = 250 A Gate-Source Threshold Voltage 0.6 1.4 V GS(th) DS GS D I V = 0 V, V = 12 V Gate-Source Leakage 100 nA GSS DS GS V = 25 V, V = 0 V 1 DS GS I Zero Gate Voltage Drain Current A DSS V = 25 V, V = 0 V, T = 55 C 10 DS GS J a I V 5 V, V = 10 V 30 A On-State Drain Current D(on) DS GS V = 10 V, I = 10 A 0.0071 0.0086 GS D a R V = 4.5 V, I = 7 A 0.0078 0.0095 Drain-Source On-State Resistance DS(on) GS D V = 2.5 V, I = 5 A 0.009 0.0115 GS D a g V = 15 V, I = 10 A 68 S Forward Transconductance fs DS D b Dynamic C Input Capacitance 1925 iss C V = 15 V, V = 0 V, f = 1 MHz Output Capacitance 305 pF oss DS GS C Reverse Transfer Capacitance 135 rss V = 15 V, V = 10 V, I = 10 A 37 56 DS GS D Q Total Gate Charge g 17.5 27 nC Q Gate-Source Charge V = 15 V, V = 4.5 V, I = 10 A 3.7 gs DS GS D Q Gate-Drain Charge 3.3 gd R Gate Resistance f = 1 MHz 1.6 3.0 g t Turn-On Delay Time 13 25 d(on) t 11 20 Rise Time V = 15 V, R = 1.5 r DD L I 10 A, V = 4.5 V, R = 1 t Turn-Off Delay Time D GEN g 50 90 d(off) Fall Time t 15 30 f ns t Turn-On Delay Time 714 d(on) Rise Time t 10 20 V = 15 V, R = 1.5 r DD L I 10 A, V = 10 V, R = 1 t Turn-Off Delay Time D GEN g 31 55 d(off) Fall Time t 918 f Drain-Source Body Diode Characteristics I T = 25 C Continuous Source-Drain Diode Current 4.5 S C A a I 50 Pulse Diode Forward Current SM Body Diode Voltage V I = 3 A 0.69 1.1 V SD S t Body Diode Reverse Recovery Time 26 45 ns rr Body Diode Reverse Recovery Charge Q 16 30 nC rr I = 5 A, dI/dt = 100 A/s, T = 25 C F J t Reverse Recovery Fall Time 13 a ns t Reverse Recovery Rise Time 13 b Notes a. Pulse test pulse width 300 s, duty cycle 2 % b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 69837 2 S-83046-Rev. C, 22-Dec-08