Si4410BDY Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) R ()I (A) DS DS(on) D Definition 0.0135 at V = 10 V 10 GS TrenchFET Power MOSFET 30 0.020 at V = 4.5 V 8 GS 100 % R Tested g Compliant to RoHS Directive 2002/95/EC APPLICATIONS Battery Switch Load Switch SO-8 D S D 1 8 S D 2 7 S D 3 6 G G D 4 5 Top View S Ordering Information: Si4410BDY-T1-E3 (Lead (Pb)-free) Si4410BDY-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol 10 s Steady State Unit V Drain-Source Voltage 30 DS V Gate-Source Voltage V 20 GS T = 25 C 10 7.5 A a I Continuous Drain Current (T = 150 C) D J T = 70 C 86 A A I Pulsed Drain Current (10 s Pulse Width) 50 DM a I 2.3 1.26 Continuous Source Current (Diode Conduction) S T = 25 C 2.5 1.4 A a P W Maximum Power Dissipation D T = 70 C 1.6 0.9 A T , T Operating Junction and Storage Temperature Range - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit t 10 s 40 50 a R Maximum Junction-to-Ambient thJA Steady State 70 90 C/W Maximum Junction-to-Foot (Drain) Steady State R 25 30 thJF Notes: a. Surface Mounted on 1 x 1 FR4 board. Document Number: 72211 www.vishay.com S09-0705-Rev. D, 27-Apr-09 1Si4410BDY Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = V , I = 250 A Gate Threshold Voltage 1.0 3.0 V GS(th) DS GS D I V = 0 V, V = 20 V Gate-Body Leakage 100 nA GSS DS GS V = 30 V, V = 0 V 1 DS GS I Zero Gate Voltage Drain Current A DSS V = 30 V, V = 0 V, T = 55 C 5 DS GS J a I V 5 V, V = 10 V 20 A On-State Drain Current D(on) DS GS V = 10 V, I = 10 A 0.011 0.0135 GS D a R Drain-Source On-State Resistance DS(on) V = 4.5 V, I = 5 A 0.0165 0.020 GS D a g V = 15 V, I = 10 A 25 S Forward Transconductance fs DS D a V I = 2.3 A, V = 0 V 0.76 1.1 V Diode Forward Voltage SD S GS b Dynamic Gate Charge Q V = 15 V, V = 5 V, I = 10 A 13 20 g DS GS D Q Total Gate Charge 25 40 gt nC Gate-Source Charge Q V = 15 V, V = 10 V, I = 10 A 5.5 gs DS GS D Q Gate-Drain Charge 3.7 gd Gate Resistance R f = 1 MHz 0.5 1.6 2.7 g t Turn-On Delay Time 10 15 d(on) Rise Time t 10 15 V = 25 V, R = 25 r DD L I 1 A, V = 10 V, R = 6 t Turn-Off Delay Time D GEN g 40 60 d(off) ns Fall Time t 15 25 f Source-Drain Reverse Recovery t I = 2.3 A, dI/dt = 100 A/s 35 70 rr F Time Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 50 50 V = 10 V thru 5 V GS 40 40 30 30 4 V 20 20 T = 125 C C 10 10 25 C 2 V - 55 C 3 V 0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 012345 V - Drain-to-Source Voltage (V) V - Gate-to-Source Voltage (V) DS GS Output Characteristics Transfer Characteristics www.vishay.com Document Number: 72211 2 S09-0705-Rev. D, 27-Apr-09 I - Drain Current (A) D I - Drain Current (A) D