SI4413ADY-T1-E3 Vishay

Si4413ADY Vishay Siliconix P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) R ( )I (A) DS DS(on) D Available 0.0075 at V = - 10 V - 15 GS TrenchFET Power MOSFET - 30 0.011 at V = - 4.5 V - 12.3 GS APPLICATIONS Notebook - Load Switch - Battery Switch S SO-8 S 1 8 D S 2 7 D G S 3 6 D G 4 5 D Top View D Ordering Information: Si4413ADY-T1-E3 (Lead (Pb)-free) P-Channel MOSFET Si4413ADY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol 10 s Steady State Unit V Drain-Source Voltage - 30 DS V Gate-Source Voltage V 20 GS T = 25 C - 15 - 10.5 A a I Continuous Drain Current (T = 150 C) D J T = 70 C - 11.8 - 8.3 A A I Pulsed Drain Current - 50 DM a I - 2.7 - 1.36 Continuous Source Current (Diode Conduction) S T = 25 C 3.0 1.5 A a P W Maximum Power Dissipation D T = 70 C 1.9 0.95 A T , T Operating Junction and Storage Temperature Range - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit t 10 s 33 42 a R Maximum Junction-to-Ambient thJA Steady State 70 84 C/W R Maximum Junction-to-Foot (Drain) Steady State 16 21 thJF Notes: a. Surface Mounted on 1 x 1 FR4 board. Document Number: 73792 www.vishay.com S-83096-Rev. C, 29-Dec-08 1Si4413ADY Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = V , I = - 250 A Gate Threshold Voltage - 1.0 - 3.0 V GS(th) DS GS D I V = 0 V, V = 20 V Gate-Body Leakage 100 nA GSS DS GS V = - 30 V, V = 0 V - 1 DS GS I Zero Gate Voltage Drain Current A DSS V = - 30 V, V = 0 V, T = 70 C - 10 DS GS J a I V = - 5 V, V = - 10 V - 30 A On-State Drain Current D(on) DS GS V = - 10 V, I = - 13 A 0.0063 0.0075 GS D a R Drain-Source On-State Resistance DS(on) V = - 4.5 V, I = - 10 A 0.0083 0.011 GS D a g V = - 15 V, I = - 13 A 50 S Forward Transconductance fs DS D a V I = - 2.7 A, V = 0 V - 0.74 - 1.1 V Diode Forward Voltage SD S GS b Dynamic Total Gate Charge Q 61 95 g Q V = - 15 V, V = - 5 V, I = - 13 A Gate-Source Charge 15.5 nC gs DS GS D Gate-Drain Charge Q 32 gd t Turn-On Delay Time 21 35 d(on) Rise Time t 18 30 V = - 15 V, R = 15 r DD L ns I - 1 A, V = - 10 V, R = 6 t Turn-Off Delay Time D GEN G 170 260 d(off) Fall Time t 97 150 f R Gate Resistance 3.4 g Source-Drain Reverse Recovery Time t I = - 2.1 A, dI/dt = 100 A/s 70 110 ns rr F Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 50 50 V = 10 thru 4 V GS 40 40 30 30 20 20 T = 125 C C 10 10 25 C 3 V - 55 C 2 V 0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0.0 0.5 1.0 1.5 2.0 2.5 V - Gate-to-Source Voltage (V) GS V - Drain-to-Source Voltage (V) DS Transfer Characteristics Output Characteristics www.vishay.com Document Number: 73792 2 S-83096-Rev. C, 29-Dec-08 I - Drain Current (A) D I - Drain Current (A) D