New Product SiR470DP Vishay Siliconix N-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free a V (V) R () Q (Typ.) I (A) DS DS(on) g D TrenchFET Gen III Power MOSFET RoHS 0.0023 at V = 10 V GS 60 COMPLIANT 100 % R Tested 40 45.5 nC g 0.00265 at V = 4.5 V GS 60 100 % UIS Tested APPLICATIONS PowerPAK SO-8 Secondary Side Synchronous Rectification Power Supply S 6.15 mm 5.15 mm 1 D S 2 S 3 G 4 D 8 D 7 G D 6 D 5 Bottom View S N-Channel MOSFET Ordering Information: SiR470DP-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol LimitUnit Drain-Source Voltage V 40 DS V V Gate-Source Voltage 20 GS a T = 25 C C 60 a T = 70 C C 60 Continuous Drain Current (T = 150 C) I J D b, c T = 25 C A 38.8 b, c T = 70 C A 31 A I Pulsed Drain Current 100 DM a T = 25 C C 60 I Continuous Source-Drain Diode Current S b, c T = 25 C A 5.6 I Single Pulse Avalanche Current 50 AS L = 0.1 mH E mJ Single Pulse Avalanche Energy 125 AS T = 25 C 104 C T = 70 C 66.6 C Maximum Power Dissipation P W D b, c T = 25 C A 6.25 b, c T = 70 C A 4.0 T , T Operating Junction and Storage Temperature Range - 55 to 150 J stg C d, e 260 Soldering Recommendations (Peak Temperature) THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, f t 10 s R 15 20 Maximum Junction-to-Ambient thJA C/W Maximum Junction-to-Case (Drain) Steady State R 0.9 1.2 thJC Notes: a. Package limited. b. Surface Mounted on 1 x 1 FR4 board. c. t = 10 s. d. See Solder Profile (New Product SiR470DP Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min. Typ.Max.Unit Static V V = 0 V, I = 250 A Drain-Source Breakdown Voltage 40 V DS GS D V Temperature Coefficient V /T 38 DS DS J I = 250 A mV/C D V Temperature Coefficient V /T - 6.7 GS(th) GS(th) J V V = V , I = 250 A Gate-Source Threshold Voltage 1.0 2.5 V GS(th) DS GS D I V = 0 V, V = 20 V Gate-Source Leakage 100 nA GSS DS GS V = 40 V, V = 0 V 1 DS GS I Zero Gate Voltage Drain Current A DSS V = 40 V, V = 0 V, T = 55 C 10 DS GS J a I V 5 V, V = 10 V 30 A On-State Drain Current D(on) DS GS V = 10 V, I = 20 A 0.0019 0.0023 GS D a R Drain-Source On-State Resistance DS(on) V = 4.5 V, I = 20 A 0.0022 0.00265 GS D a g V = 15 V, I = 20 A 190 S Forward Transconductance fs DS D b Dynamic C Input Capacitance 5660 iss C V = 20 V, V = 0 V, f = 1 MHz Output Capacitance 720 pF oss DS GS C Reverse Transfer Capacitance 327 rss V = 20 V, V = 10 V, I = 20 A 102 155 DS GS D Q Total Gate Charge g 45.5 70 nC Q Gate-Source Charge V = 20 V, V = 4.5 V, I = 20 A 13.8 gs DS GS D Q Gate-Drain Charge 14.4 gd R Gate Resistance f = 1 MHz 0.2 1.0 2 g t Turn-On Delay Time 16 30 d(on) t Rise Time V = 20 V, R = 2 11 20 r DD L I 10 A, V = 10 V, R = 1 t Turn-Off Delay Time D GEN g 50 80 d(off) Fall Time t 918 f ns t Turn-On Delay Time 40 75 d(on) Rise Time t 31 60 V = 20 V, R = 2 r DD L I 10 A, V = 4.5 V, R = 1 t Turn-Off Delay Time D GEN g 85 150 d(off) Fall Time t 39 75 f Drain-Source Body Diode Characteristics I T = 25 C Continuous Source-Drain Diode Current 60 S C A a I 100 Pulse Diode Forward Current SM Body Diode Voltage V I = 5 A 0.73 1.1 V SD S t Body Diode Reverse Recovery Time 39 75 ns rr Body Diode Reverse Recovery Charge Q 53 105 nC rr I = 10 A, dI/dt = 100 A/s, T = 25 C F J t Reverse Recovery Fall Time 24 a ns Reverse Recovery Rise Time t 15 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 68899 2 S-82295-Rev. A, 22-Sep-08