PD - 95729 Si4420DYPbF HEXFET Power MOSFET N-Channel MOSFET A A Low On-Resistance 1 8 D S V = 30V DSS Low Gate Charge 2 7 S D Surface Mount 3 6 S D Logic Level Drive 4 5 Lead-Free G D R = 0.009 DS(on) Top View Description This N-channel HEXFET power MOSFET is produced using International Rectifier s advanced HEXFET power MOSFET technology. The low on-resistance and low gate charge inherent to this technology make this device ideal for low voltage or battery driven power conversion applications The SO-8 package with copper leadframe offers enhanced thermal characteristics that allow power dissipation of greater that 800mW in typical board mount applications. SO-8 Parameter Max. Units V Drain- Source Voltage 30 V DS I T = 25C Continuous Drain Current, V 10V 12.5 D A GS I T = 70C Continuous Drain Current, V 10V 10 A D A GS I Pulsed Drain Current 50 DM P T = 25C Power Dissipation 2.5 D A P T = 70C Power Dissipation 1.6 D A Linear Derating Factor 0.02 W/C E Single Pulse Avalanche Energy 400 mJ AS V Gate-to-Source Voltage 20 V GS T T Junction and Storage Temperature Range -55 to + 150 C J, STG Thermal Resistance Parameter Max. Units R Maximum Junction-to-Ambient 50 C/W JA www.irf.com 1 8/11/04 Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 30 V V = 0V, I = 250A (BR)DSS GS D V /T Breakdown Voltage Temp. Coefficient 0.028 V/C Reference to 25C, I = 1mA (BR)DSS J D 0.009 V = 10V, I = 12.5A GS D R Static Drain-to-Source On-Resistance DS(on) 0.013 V = 4.5V, I = 10.5A GS D V Gate Threshold Voltage 1.0 V V = V , I = 250A GS(th) DS GS D g Forward Transconductance 29 S V = 15V, I = 12.5A fs DS D 1.0 V = 30V, V = 0V DS GS I Drain-to-Source Leakage Current DSS 5.0 V = 30V, V = 0V, T = 55C DS GS J Gate-to-Source Forward Leakage -100 V = -20V GS I GSS Gate-to-Source Reverse Leakage 100 V = 20V GS Q Total Gate Charge 52 78 I = 12.5A g D Q Gate-to-Source Charge 8.7 nC V = 15V gs DS Q Gate-to-Drain Mille) Charge 12 V = 10V, See Fig. 6 gd GS t Turn-On Delay Time 15 V = 15V d(on) DD t Rise Time 10 I = 1.0A r D t Turn-Off Delay Time 55 R = 6.0 d(off) G t Fall Time 47 R = 15, f D C Input Capacitance 2240 V = 0V iss GS C Output Capacitance 1100 pF V = 15V oss DS C Reverse Transfer Capacitance 150 = 1.0MHz, See Fig. 5 rss Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S 2.3 (Diode Conduction) showing the G I Pulsed Source Current integral reverse SM 50 (Body Diode) p-n junction diode. S V Diode Forward Voltage 1.1 V T = 25C, I = 2.3A, V = 0V SD J S GS Reverse Recovery Time 52 78 ns T = 25C, I = 2.3A t rr J F Starting T = 25C, L = 13mH Repetitive rating pulse width limited by J R = 25, I = 8.9A. (See Figure 15) max. junction temperature. G AS Pulse width 300s duty cycle When mounted on FR4 Board, t 10 sec 2 www.irf.com