New Product Si4128DY Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 a V (V) R () Q (Typ.) I (A) DS DS(on) g D Available 0.024 at V = 10 V 10.9 GS TrenchFET Power MOSFET 30 3.8 nC 100 % R Tested 0.030 at V = 4.5 V 9.7 g GS APPLICATIONS Notebook PC - System Power - Load Switch SO-8 1 8 S D D S 2 7 D 3 6 S D G 4 5 D G Top View S Ordering Information: Si4128DY-T1-E3 (Lead (Pb)-free) Si4128DY-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol Limit Unit Drain-Source Voltage V 30 DS V Gate-Source Voltage V 20 GS T = 25 C 10.9 C T = 70 C 8.7 C Continuous Drain Current (T = 150 C) I J D b, c T = 25 C A 7.5 b, c T = 70 C A A 6 I Pulsed Drain Current 30 DM T = 25 C 4.2 C I Continuous Source-Drain Diode Current S b, c T = 25 C A 2 T = 25 C 5 C T = 70 C 3.2 C P Maximum Power Dissipation W D b, c T = 25 C A 2.4 b, c T = 70 C A 1.5 Operating Junction and Storage Temperature Range T , T - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, d t 10 s R 42 53 Maximum Junction-to-Ambient thJA C/W R Maximum Junction-to-Foot (Drain) Steady State 19 25 thJF Notes: a. T = 25 C. C b. Surface Mounted on 1 x 1 FR4 board. c. t = 10 s. d. Maximum under Steady State conditions is 85 C/W. Document Number: 69004 www.vishay.com S-83089-Rev. C, 29-Dec-08 1New Product Si4128DY Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min. Typ.Max.Unit Static V V = 0 V, I = 250 A Drain-Source Breakdown Voltage 30 V DS GS D V Temperature Coefficient V /T 35 DS DS J I = 250 A mV/C D V Temperature Coefficient V /T - 4.5 GS(th) GS(th) J V V = V , I = 250 A Gate-Source Threshold Voltage 1.0 2.5 V GS(th) DS GS D I V = 0 V, V = 20 V Gate-Source Leakage 100 nA GSS DS GS V = 30 V, V = 0 V 1 DS GS Zero Gate Voltage Drain Current I A DSS V = 30 V, V = 0 V, T = 55 C 5 DS GS J a I V 5 V, V = 10 V 20 A On-State Drain Current D(on) DS GS V = 10 V, I = 7.8 A 0.020 0.024 GS D a R Drain-Source On-State Resistance DS(on) V = 4.5 V, I = 7.0 A 0.024 0.030 GS D a g V = 10 V, I = 7.8 A 17 S Forward Transconductance fs DS D b Dynamic C Input Capacitance 435 iss C V = 15 V, V = 0 V, f = 1 MHz Output Capacitance 95 pF oss DS GS C Reverse Transfer Capacitance 42 rss V = 15 V, V = 10 V, I = 7.8 A 812 DS GS D Q Total Gate Charge g 3.8 6 nC Q Gate-Source Charge V = 15 V, V = 4.5 V, I = 7.8 A 1.4 gs DS GS D Q Gate-Drain Charge 1.1 gd Gate Resistance R f = 1 MHz 1.5 3.2 4.5 g t Turn-On Delay Time 15 25 d(on) Rise Time t 12 20 V = 15 V, R = 2.4 r DD L I 6.3 A, V = 4.5 V, R = 1 t Turn-Off Delay Time D GEN g 13 20 d(off) Fall Time t 10 15 f ns t Turn-On Delay Time 510 d(on) Rise Time t 10 15 V = 15 V, R = 2.4 r DD L I 6.3 A, V = 10 V, R = 1 t Turn-Off Delay Time D GEN g 15 25 d(off) t Fall Time 10 15 f Drain-Source Body Diode Characteristics I T = 25 C Continuous Source-Drain Diode Current 4.2 S C A I Pulse Diode Forward Current 30 SM V I = 6.3 A, V = 0 V Body Diode Voltage 0.8 1.2 V SD S GS t Body Diode Reverse Recovery Time 15 25 ns rr Q Body Diode Reverse Recovery Charge 712 nC rr I = 6.3 A, dI/dt = 100 A/s, T = 25 C F J t Reverse Recovery Fall Time 9 a ns t Reverse Recovery Rise Time 6 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 % b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 69004 2 S-83089-Rev. C, 29-Dec-08