Si4102DY Vishay Siliconix N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET d V (V) R () Q (Typ.) 100 % UIS Tested DS DS(on) I (A) g D Material categorization: 0.158 at V = 10 V 3.8 GS For definitions of compliance please see 100 4.6 nC 0.175 at V = 6 V 3.6 GS www.vishay.com/doc 99912 APPLICATIONS High Frequency Boost Converter LED Backlight for LCD TV SO-8 D D S 1 8 D S 2 7 D S 3 6 G G D 4 5 Top View S N-Channel MOSFET Ordering Information: Si4102DY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol Limit Unit V 100 Drain-Source Voltage DS V V 20 Gate-Source Voltage GS T = 25 C 3.8 C T = 70 C 3 C Continuous Drain Current (T = 150 C) I J D a, b T = 25 C A 2.7 a, b T = 70 C A A 2.1 I 8 Pulsed Drain Current DM T = 25 C 4 C I Continuous Source-Drain Diode Current S a, b T = 25 C A 2 I 6 Single Avalanche Current A AS L = 0.1 mH E 1.8 Single Avalanche Energy mJ AS T = 25 C 4.8 C T = 70 C 3 C P Maximum Power Dissipation W D a, b T = 25 C A 2.4 a, b T = 70 C A 1.5 T , T Operating Junction and Storage Temperature Range - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit a, c t 10 s R 42 53 Maximum Junction-to-Ambient thJA C/W R Maximum Junction-to-Foot (Drain) Steady State 21 26 thJF Notes: a. Surface mounted on 1 x 1 FR4 board. b. t = 10 s. c. Maximum under steady state conditions is 85 C/W. d. Based on T = 25 C. C Document Number: 69252 For technical questions, contact: pmostechsupport vishay.com www.vishay.com S13-0631-Rev. C, 25-Mar-13 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000Si4102DY Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = 0 V, I = 250 A Drain-Source Breakdown Voltage 100 V DS GS D V Temperature Coefficient V /T 110 DS DS J I = 250 A mV/C D V Temperature Coefficient V /T - 7.5 GS(th) GS(th) J V V = V , I = 250 A Gate-Source Threshold Voltage 24V GS(th) DS GS D I V = 0 V, V = 20 V Gate-Source Leakage 100 nA GSS DS GS V = 100 V, V = 0 V 1 DS GS Zero Gate Voltage Drain Current I A DSS V = 100 V, V = 0 V, T = 55 C 10 DS GS J a I V 5 V, V = 10 V 8A On-State Drain Current D(on) DS GS V 10 V, I = 2.7 A 0.130 0.158 GS D a R Drain-Source On-State Resistance DS(on) V 6 V, I = 2.5 A 0.145 0.175 GS D a g V = 10 V, I = 2.7 A 7S Forward Transconductance fs DS D b Dynamic C Input Capacitance 370 iss C V = 50 V, V = 0 V, f = 1 MHz Output Capacitance 40 pF oss DS GS C Reverse Transfer Capacitance 20 rss V = 50 V, V = 10 V, I = 2.7 A 7.1 11 DS GS D Q Total Gate Charge g 4.6 7 nC Q Gate-Source Charge V = 50 V, V = 6 V, I = 2.7 A 1.7 gs DS GS D Q Gate-Drain Charge 2 gd Gate Resistance R f = 1 MHz 3 g t Turn-On Delay Time 10 15 d(on) Rise Time t 10 15 V = 50 V, R = 23.8 r DD L I 2.1 A, V = 6 V, R = 1 t Turn-Off Delay Time D GEN g 10 15 d(off) Fall Time t 10 15 f ns t Turn-On Delay Time 10 15 d(on) Rise Time t 10 15 V = 50 V, R = 23.8 r DD L I 2.1 A, V = 10 V, R = 1 t Turn-Off Delay Time D GEN g 12 20 d(off) t Fall Time 10 15 f Drain-Source Body Diode Characteristics I T = 25 C Continuous Source-Drain Diode Current 4 S C A I Pulse Diode Forward Current 8 SM V I = 2.1 A, V = 0 V Body Diode Voltage 0.8 1.2 V SD S GS t Body Diode Reverse Recovery Time 50 80 ns rr Q Body Diode Reverse Recovery Charge 75 120 nC rr I = 2.1 A, dI/dt = 100 A/s, T = 25 C F J t Reverse Recovery Fall Time 28 a ns t Reverse Recovery Rise Time 22 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 % b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com For technical questions, contact: pmostechsupport vishay.com Document Number: 69252 2 S13-0631-Rev. C, 25-Mar-13 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000