New Product Si4166DY Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free a V (V) R () Q (Typ.) I (A) DS DS(on) g D TrenchFET Power MOSFET RoHS 0.0039 at V = 10 V 30.5 GS 100 % R and UIS Tested COMPLIANT g 30 21.5 nC 0.0055 at V = 4.5 V 25.6 GS APPLICATIONS Low-Side DC/DC Conversion - Notebook PC - Gaming SO-8 D SD 1 8 SD 2 7 SD 3 6 G GD 4 5 Top View S Ordering Information: Si4166DY-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol Limit Unit V Drain-Source Voltage 30 DS V Gate-Source Voltage V 20 GS T = 25 C 30.5 C T = 70 C 24.5 C Continuous Drain Current (T = 150 C) I J D b, c T = 25 C A 20.5 b, c T = 70 C A 16.5 A I Pulsed Drain Current 70 DM T = 25 C 5.9 C I Continuous Source-Drain Diode Current S b, c T = 25 C A 2.7 I Single Pulse Avalanche Current 30 AS L = 0.1 mH Avalanche Energy E mJ 45 AS T = 25 C 6.5 C T = 70 C 4.2 C P Maximum Power Dissipation W D b, c T = 25 C A 3.0 b, c T = 70 C A 1.9 T , T Operating Junction and Storage Temperature Range - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, d t 10 s R 34 41 Maximum Junction-to-Ambient thJA C/W R Maximum Junction-to-Foot (Drain) Steady State 15 19 thJF Notes: a. Based on T = 25 C. C b. Surface Mounted on 1 x 1 FR4 board. c. t = 10 s. d. Maximum under Steady State conditions is 80 C/W. Document Number: 68953 www.vishay.com S-82661-Rev. A, 03-Nov-08 1New Product Si4166DY Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min. Typ.Max.Unit Static V V = 0 V, I = 250 A Drain-Source Breakdown Voltage 30 V DS GS D V Temperature Coefficient V /T 31 DS DS J I = 250 A mV/C D V Temperature Coefficient V /T - 5.4 GS(th) GS(th) J V = V , I = 250 A Gate-Source Threshold Voltage V 1.2 2.4 V GS(th) DS GS D I V = 0 V, V = 20 V Gate-Source Leakage 100 nA GSS DS GS V = 30 V, V = 0 V 1 DS GS I Zero Gate Voltage Drain Current A DSS V = 30 V, V = 0 V, T = 55 C 10 DS GS J a I V 5 V, V = 10 V 30 A On-State Drain Current D(on) DS GS V = 10 V, I = 15 A 0.0032 0.0039 GS D a R Drain-Source On-State Resistance DS(on) V = 4.5 V, I = 10 A 0.0045 0.0055 GS D a g V = 15 V, I = 15 A 65 S Forward Transconductance fs DS D b Dynamic Input Capacitance C 2730 iss C V = 15 V, V = 0 V, f = 1 MHz Output Capacitance 540 pF oss DS GS Reverse Transfer Capacitance C 205 rss V = 15 V, V = 10 V, I = 10 A 42.5 65 DS GS D Q Total Gate Charge g 21.5 33 nC Gate-Source Charge Q V = 15 V, V = 4.5 V, I = 10 A 6.9 gs DS GS D Q Gate-Drain Charge 7.1 gd Gate Resistance R f = 1 MHz 0.2 0.8 1.6 g t Turn-On Delay Time 30 50 d(on) Rise Time t 19 35 r V = 15 V, R = 1.5 DD L I 10 A, V = 4.5 V, R = 1 t Turn-Off Delay Time D GEN g 35 60 d(off) t Fall Time 15 30 f ns t Turn-On Delay Time 12 24 d(on) t Rise Time V = 15 V, R = 1.5 918 r DD L I 10 A, V = 10 V, R = 1 t Turn-Off Delay Time D GEN g 29 50 d(off) t Fall Time 918 f Drain-Source Body Diode Characteristics I T = 25 C Continuous Source-Drain Diode Current 5.9 S C A a I 70 Pulse Diode Forward Current SM Body Diode Voltage V I = 3 A 0.74 1.1 V SD S t Body Diode Reverse Recovery Time 28 55 ns rr Q Body Diode Reverse Recovery Charge 21 42 nC rr I = 10 A, dI/dt = 100 A/s, T = 25 C F J t Reverse Recovery Fall Time 15 a ns t Reverse Recovery Rise Time 13 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 % b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 68953 2 S-82661-Rev. A, 03-Nov-08