Si4168DY Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free a V (V) R () Q (Typ.) I (A) DS DS(on) g D TrenchFET Power MOSFET 0.0057 at V = 10 V 24 100 % R Tested GS g 30 13.8 nC 100 % UIS Tested 0.0076 at V = 4.5 V 21 GS APPLICATIONS Notebook DC/DC SO-8 D SD 1 8 SD 2 7 SD 3 6 G GD 4 5 Top View S Ordering Information: Si4168DY-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol Limit Unit Drain-Source Voltage V 30 DS V Gate-Source Voltage V 20 GS T = 25 C 24 C T = 70 C 19.4 C Continuous Drain Current (T = 150 C) I J D b, c T = 25 C 16 A A b, c T = 70 C 14 A Pulsed Drain Current I 70 DM Avalanche Current I 35 AS L = 0.1 mH Avalanche Energy E mJ 61 AS T = 25 C 4.7 C Continuous Source-Drain Diode Current I A S b, c T = 25 C 2.1 A T = 25 C 5.7 C T = 70 C 3.6 C Maximum Power Dissipation P W D b, c T = 25 C 2.5 A b, c T = 70 C 1.6 A T , T C Operating Junction and Storage Temperature Range - 55 to 150 J stg THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, f t 10 s R 35 50 Maximum Junction-to-Ambient thJA C/W R Maximum Junction-to-Foot (Drain) Steady State 18 22 thJF Notes: a. Based on T = 25 C. C b. Surface Mounted on 1 x 1 FR4 board. c. t = 10 s. d. Maximum under Steady State conditions is 85 C/W. Document Number: 69005 www.vishay.com S-82668-Rev. A, 03-Nov-08 1Si4168DY Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min. Typ.Max.Unit Static V V = 0 V, I = 250 A Drain-Source Breakdown Voltage 30 V DS GS D V /T V Temperature Coefficient 27 DS J DS I = 250 A mV/C D V /T V Temperature Coefficient - 5.5 GS(th) J GS(th) V V = V , I = 250 A Gate-Source Threshold Voltage 13V GS(th) DS GS D I V = 0 V, V = 20 V Gate-Source Leakage 100 nA GSS DS GS V = 30 V, V = 0 V 1 DS GS Zero Gate Voltage Drain Current I A DSS V = 30 V, V = 0 V, T = 55 C 5 DS GS J a On-State Drain Current I V 5 V, V = 10 V 50 A D(on) DS GS V = 10 V, I = 20 A 0.0047 0.0057 GS D a R Drain-Source On-State Resistance DS(on) V = 4.5 V, I = 18 A 0.0062 0.0076 GS D a g V = 15 V, I = 20 A Forward Transconductance 90 S fs DS D b Dynamic Input Capacitance C 1720 iss C V = 15 V, V = 0 V, f = 1 MHz Output Capacitance 355 pF oss DS GS Reverse Transfer Capacitance C 130 rss V = 15 V, V = 10 V, I = 20 A 29 44 DS GS D Q Total Gate Charge g 13.8 21 nC Gate-Source Charge Q 5.0 V = 15 V, V = 4.5 V, I = 20 A gs DS GS D Q Gate-Drain Charge 4.6 gd Gate Resistance R f = 1 MHz 1.1 2.2 g t Turn-On Delay Time 25 40 d(on) t Rise Time V = 15 V, R = 15 14 25 r DD L I 1.0 A, V = 4.5 V, R = 1 t Turn-Off Delay Time D GEN g 30 45 d(off) t Fall Time 15 25 f ns t Turn-On Delay Time 11 20 d(on) t Rise Time V = 15 V, R = 15 915 r DD L I 1.0 A, V = 10 V, R = 1 t Turn-Off Delay Time D GEN g 27 40 d(off) t Fall Time 915 f Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current I T = 25 C 4.7 S C A I Pulse Diode Forward Current 70 SM Body Diode Voltage V I = 4.1 A, V = 0 V 0.75 1.2 V SD S GS t Body Diode Reverse Recovery Time 25 50 ns rr Body Diode Reverse Recovery Charge Q 17 35 nC rr I = 4.1 A, dI/dt = 100 A/s, T = 25 C F J t Reverse Recovery Fall Time 13 a ns Reverse Recovery Rise Time t 12 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 69005 2 S-82668-Rev. A, 03-Nov-08