Si4062DY Vishay Siliconix N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET a V (V) R () Max. I (A) Q (Typ.) DS DS(on) D g 100 % R and UIS Tested g 0.0042 at V = 10 V 32.1 Material categorization: GS For definitions of compliance please see 60 0.0054 at V = 6 V 28.3 18.8 nC GS www.vishay.com/doc 99912 0.0069 at V = 4.5 V 25 GS APPLICATIONS SO-8 D DC/DC Primary Side Switch SD 1 8 Industrial Synchronous Rectification SD 2 7 Load Switch SD 3 6 DC/DC Converters G GD 4 5 DC/AC Inverters Top View S Ordering Information: N-Channel MOSFET Si4062DY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol Limit Unit Drain-Source Voltage V 60 DS V V Gate-Source Voltage 20 GS T = 25 C 32.1 C T = 70 C 25.7 C Continuous Drain Current (T = 150 C) I J D b, c T = 25 C 21.5 A b, c T = 70 C 17 A A I Pulsed Drain Current (t = 100 s) 150 DM T = 25 C 7 C Continuous Source-Drain Diode Current I S b, c = 25 C 3.1 T A Single Pulse Avalanche Current I 25 AS L = 0.1 mH Avalanche Energy E 31.2 mJ AS T = 25 C 7.8 C T = 70 C 5 C Maximum Power Dissipation P W D b, c T = 25 C 3.5 A b, c T = 70 C 2.2 A Operating Junction and Storage Temperature Range T , T - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, d Maximum Junction-to-Ambient t 10 s R 29 35 thJA C/W R Maximum Junction-to-Foot (Drain) Steady State 13 16 thJF Notes: a. Based on T = 25 C. C b. Surface mounted on 1 x 1 FR4 board. c. t = 10 s. d. Maximum under steady state conditions is 80 C/W. Document Number: 62857 For technical questions, contact: pmostechsupport vishay.com www.vishay.com S13-1383-Rev. A, 17-Jun-13 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000Si4062DY Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J Parameter Symbol Test Conditions Min. Typ.Max.Unit Static V V = 0 V, I = 250 A Drain-Source Breakdown Voltage 60 V DS GS D V Temperature Coefficient V /T 96 DS DS J I = 250 A mV/C D V Temperature Coefficient V /T - 5.8 GS(th) GS(th) J V = V , I = 250 A Gate-Source Threshold Voltage V 1.4 2.6 V GS(th) DS GS D I V = 0 V, V = 20 V Gate-Source Leakage 100 nA GSS DS GS V = 60 V, V = 0 V 1 DS GS I Zero Gate Voltage Drain Current A DSS V = 60 V, V = 0 V, T = 55 C 10 DS GS J a I V 5 V, V = 10 V 30 A On-State Drain Current D(on) DS GS V 10 V, I = 20 A 0.0035 0.0042 GS D a R V 6 V, I = 15 A 0.0043 0.0054 Drain-Source On-State Resistance DS(on) GS D V 4.5 V, I = 10 A 0.0055 0.0069 GS D a g V = 15 V, I = 20 A 80 S Forward Transconductance fs DS D b Dynamic C Input Capacitance 3175 iss Output Capacitance C V = 30 V, V = 0 V, f = 1 MHz 1265 pF oss DS GS C Reverse Transfer Capacitance 95 rss V = 30 V, V = 10 V, I = 10 A 40 60 DS GS D Total Gate Charge Q g 18.8 29 Q Gate-Source Charge V = 30 V, V = 4.5 V, I = 10 A 8.9 gs nC DS GS D Gate-Drain Charge Q 3.8 gd Q V = 30 V, V = 0 V Output Charge 51.5 80 oss DS GS R Gate Resistance f = 1 MHz 0.5 2 3 g t Turn-On Delay Time 52 100 d(on) t Rise Time V = 30 V, R = 3 105 200 r DD L I 10 A, V = 4.5 V, R = 1 t Turn-Off Delay Time D GEN g 26 50 d(off) t Fall Time 10 20 f ns t Turn-On Delay Time 16 30 d(on) t Rise Time V = 30 V, R = 3 612 r DD L I 10 A, V = 10 V, R = 1 Turn-Off Delay Time t 34 70 D GEN g d(off) t Fall Time 816 f Drain-Source Body Diode Characteristics I T = 25 C Continuous Source-Drain Diode Current 7.1 S C A Pulse Diode Forward Current I 150 SM (t = 100 s) p V I = 5 A Body Diode Voltage 0.74 1.1 V SD S t Body Diode Reverse Recovery Time 46 92 ns rr Body Diode Reverse Recovery Charge Q 44 88 nC rr I = 5 A, di/dt = 100 A/s, T = 25 C F J t Reverse Recovery Fall Time 20 a ns Reverse Recovery Rise Time t 26 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 % b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com For technical questions, contact: pmostechsupport vishay.com Document Number: 62857 2 S13-1383-Rev. A, 17-Jun-13 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000