X-On Electronics has gained recognition as a prominent supplier of SI3850ADV-T1-E3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI3850ADV-T1-E3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SI3850ADV-T1-E3 Vishay

SI3850ADV-T1-E3 electronic component of Vishay
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Part No.SI3850ADV-T1-E3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET 20V 1.40.96A
: 2-Channel, high-side current switch, integrated high-performance MOSFET, max. load current of 5.5 A.
Datasheet: SI3850ADV-T1-E3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3000: USD 0.2266 ea
Line Total: USD 679.8 
Availability - 0
MOQ: 3000  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Wed. 25 Dec to Tue. 31 Dec
MOQ : 3000
Multiples : 1
3000 : USD 0.2266

   
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We are delighted to provide the SI3850ADV-T1-E3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI3850ADV-T1-E3 and other electronic components in the MOSFETs category and beyond.

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The SI3850ADV-T1-E3 part of Vishay is an optically isolated gate driver optocoupler designed to drive a variety of n-channel power MOSFETs and insulated gate bipolar transistors (IGBTs). It has a 4-pin dual-in-line package, a drive voltage of 8V, and a maximum operating temperature of 105°C. The part includes an integrated high-voltage MOSFET and I/O, as well as an CMOS/TTL compatible input stage with 0.8mA drive, 1.5 kVrms isolation, and 5 kV ESD protection. It is suitable for driving gate voltages up to 15V and gate currents up to 5A.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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