X-On Electronics has gained recognition as a prominent supplier of SI3483CDV-T1-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI3483CDV-T1-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SI3483CDV-T1-GE3 Vishay

Hot SI3483CDV-T1-GE3 electronic component of Vishay
SI3483CDV-T1-GE3 Vishay
SI3483CDV-T1-GE3 MOSFETs
SI3483CDV-T1-GE3  Semiconductors

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See Product Specifications
Part No. SI3483CDV-T1-GE3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET -30V Vds 20V Vgs TSOP-6
Datasheet: SI3483CDV-T1-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3000: USD 0.1625 ea
Line Total: USD 487.5 
Availability - 125130
Ship by Fri. 03 Jan to Thu. 09 Jan
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
5820
Ship by Fri. 03 Jan to Thu. 09 Jan
MOQ : 3000
Multiples : 3000
3000 : USD 0.4083

652
Ship by Fri. 03 Jan to Thu. 09 Jan
MOQ : 121
Multiples : 1
121 : USD 0.5369
122 : USD 0.5331
123 : USD 0.5291
143 : USD 0.4554
250 : USD 0.4509
500 : USD 0.4124

125130
Ship by Fri. 03 Jan to Thu. 09 Jan
MOQ : 3000
Multiples : 3000
3000 : USD 0.1625
6000 : USD 0.1599
9000 : USD 0.1586
12000 : USD 0.1573
15000 : USD 0.156

3
Ship by Fri. 10 Jan to Wed. 15 Jan
MOQ : 1
Multiples : 1
1 : USD 0.5383
10 : USD 0.4485
30 : USD 0.4104
100 : USD 0.3645
500 : USD 0.3093
1000 : USD 0.2959

35803
Ship by Wed. 01 Jan to Fri. 03 Jan
MOQ : 1
Multiples : 1
1 : USD 1.111
10 : USD 0.6721
100 : USD 0.5049
500 : USD 0.4433
1000 : USD 0.4147
3000 : USD 0.3982
24000 : USD 0.3883

2249
Ship by Wed. 01 Jan to Fri. 03 Jan
MOQ : 3
Multiples : 1
3 : USD 0.49
25 : USD 0.441
47 : USD 0.3696
127 : USD 0.35
3000 : USD 0.336

5820
Ship by Fri. 03 Jan to Thu. 09 Jan
MOQ : 3000
Multiples : 3000
3000 : USD 0.4083

652
Ship by Fri. 03 Jan to Thu. 09 Jan
MOQ : 25
Multiples : 1
25 : USD 0.5073
100 : USD 0.4433
250 : USD 0.4389
500 : USD 0.4124

87300
Ship by Fri. 03 Jan to Thu. 09 Jan
MOQ : 3000
Multiples : 3000
3000 : USD 0.2666
48000 : USD 0.2436
72000 : USD 0.2267

2910
Ship by Fri. 03 Jan to Thu. 09 Jan
MOQ : 3000
Multiples : 3000
3000 : USD 0.3541

2910
Ship by Fri. 03 Jan to Thu. 09 Jan
MOQ : 3000
Multiples : 3000
3000 : USD 0.4342

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Series
Transistor Type
Brand
Forward Transconductance - Min
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the SI3483CDV-T1-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI3483CDV-T1-GE3 and other electronic components in the MOSFETs category and beyond.

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The Vishay SI3483CDV-T1-GE3 is an N-channel, low voltage, enhancement-mode power MOSFET. It has an 18V drain-source breakdown voltage, a gate-source threshold voltage of -1.5V, and a 5.6V maximum gate-source voltage. It has a continuous drain current of 7.3A and a drain-source on-state resistance of 0.0073ohms, making it suitable for applications requiring higher currents, such as motor control, DC-DC converters, and power management circuits. This device is available in a miniature TO-251 (DPAK) package and is RoHS compliant.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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