Si3474DV Vishay Siliconix N-Channel 100 V (D-S) MOSFET FEATURES MOSFET PRODUCT SUMMARY TrenchFET Power MOSFET a V (V) R () Max. Q (Typ.) I (A) DS DS(on) g 100 % R and UIS Tested D g Material categorization: 0.126 at V = 10 V 3.8 GS For definitions of compliance please see 0.147 at V = 6 V 100 3.5 2.9 nC GS www.vishay.com/doc 99912 0.189 at V = 4.5 V 3.1 GS APPLICATIONS DC/DC Converters / Boost Converters TSOP-6 Load Switch (1, 2, 5, 6) Top View D LED Backlighting in LCD TVs Power Management for Mobile D D 1 6 Computing 3 mm D 5 D 2 G (3) Marking Code G S 3 4 BF XX (4) S Lot Traceability and Date Code 2.85 mm N-Channel MOSFET Part Code Ordering Information: Si3474DV-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol Limit Unit V Drain-Source Voltage DS 100 V V Gate-Source Voltage GS 20 T = 25 C 3.8 C T = 70 C 3 C Continuous Drain Current (T = 150 C) I J D b, c T = 25 C 2.8 A b, c T = 70 C C 2.3 A I Pulsed Drain Current (t = 100 s) 14 DM T = 25 C C 3 I Continuous Source-Drain Diode Current S b, c T = 25 C 1.7 A I Single Pulse Avalanche Current 2.5 AS L = 0.1 mH E Single Pulse Avalanche Energy 0.31 mJ AS T = 25 C 3.6 C T = 70 C 2.33 C P Maximum Power Dissipation W D b, c T = 25 C 2 A b, c T = 70 C 1.3 A T , T Operating Junction and Storage Temperature Range - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, d R 5 s 50 62.5 Maximum Junction-to-Ambient thJA C/W R Maximum Junction-to-Foot (Drain) Steady State 28 35 thJF Notes: a. Based on T = 25 C. C b. Surface mounted on 1 x 1 FR4 board. c. t = 5 s. d. Maximum under steady state conditions is 110 C/W. Document Number: 62875 www.vishay.com For technical questions, contact: pmostechsupport vishay.com S13-1664-Rev. A, 29-Jul-13 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 YYSi3474DV Vishay Siliconix MOSFET SPECIFICATIONS (T = 25 C, unless otherwise noted) J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = 0 V, I = 250 A Drain-Source Breakdown Voltage 100 V DS GS D V Temperature Coefficient V /T 59 DS DS J I = 250 A D mV/C V Temperature Coefficient V /T - 4.8 GS(th) GS(th) J V V = V , I = 250 A Gate-Source Threshold Voltage 1.2 3 V GS(th) DS GS D I V = 0 V, V = 20 V Gate-Source Leakage 100 nA GSS DS GS V = 100 V, V = 0 V - 1 DS GS I Zero Gate Voltage Drain Current A DSS V = 100 V, V = 0 V, T = 55 C - 10 DS GS J a I V 5 V, V = 10 V 5A On-State Drain Current D(on) DS GS V = 10 V, I = 2 A 0.102 0.126 GS D a R V = 6 V, I = 1 A 0.120 0.147 Drain-Source On-State Resistance DS(on) GS D V = 4.5 V, I = 1 A 0.135 0.189 GS D a g V = 20 V, I = 2 A 5S Forward Transconductance fs DS D b Dynamic C Input Capacitance 196 iss Output Capacitance C V = 50 V, V = 0 V, f = 1 MHz 67 pF oss DS GS C Reverse Transfer Capacitance 14 rss V = 50 V, V = 10 V, I = 2.2 A 5.2 10.4 DS GS D Q Total Gate Charge g 2.9 5.8 nC Q Gate-Source Charge V = 50 V, V = 4.5 V, I = 2.2 A 1 gs DS GS D Q Gate-Drain Charge 1.4 gd R Gate Resistance f = 1 MHz 0.9 4.3 8.6 g t Turn-On Delay Time 40 60 d(on) t Rise Time V = 50 V, R = 27.7 68 102 r DD L I = 1.8 A, V = 4.5 V, R = 1 t Turn-Off Delay Time D GEN g 14 21 d(off) Fall Time t 20 30 f ns t Turn-On Delay Time 816 d(on) Rise Time t 10 20 V = 50 V, R = 27.7 r DD L I = 1.8 A, V = 10 V, R = 1 t Turn-Off Delay Time D GEN g 10 20 d(off) Fall Time t 714 f Drain-Source Body Diode Characteristics I T = 25 C Continuous Source-Drain Diode Current - 2.1 S C A I - 8 Pulse Diode Forward Current (t = 100 s) SM Body Diode Voltage V I = 1.8 A - 0.8 - 1.2 V SD S t Body Diode Reverse Recovery Time 23 35 ns rr Body Diode Reverse Recovery Charge Q 21 32 nC I = 1.8 A, dI/dt = 100 A/s, rr F T = 25 C t Reverse Recovery Fall Time J 17 a ns Reverse Recovery Rise Time t 6 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 62875 For technical questions, contact: pmostechsupport vishay.com 2 S13-1664-Rev. A, 29-Jul-13 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000