New Product Si4101DY Vishay Siliconix P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET d V (V) R () Max. Q (Typ.) I (A) DS DS(on) g D 100 % R and UIS Tested g 0.0060 at V = - 10 V - 25.7 Material categorization: GS - 30 65 nC For definitions of compliance please see 0.0080 at V = - 4.5 V - 22.3 GS www.vishay.com/doc 99912 SO-8 APPLICATIONS S S Adaptor Switch, Load Switch 1 8 D Power Management S D 2 7 Notebook Computers and S 3 6 D G Portable Battery Packs G D 4 5 Top View Ordering Information: D Si4101DY-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol Limit Unit V Drain-Source Voltage - 30 DS V V Gate-Source Voltage 20 GS T = 25 C - 25.7 C T = 70 C - 20.6 C Continuous Drain Current (T = 150 C) I J D a, b T = 25 C - 18 A a, b T = 70 C - 14.4 A A I - 70 Pulsed Drain Current (t = 300 s) DM T = 25 C - 5 C I Continuous Source-Drain Diode Current S a, b T = 25 C - 2.4 A I Avalanche Current - 30 AS L = 0.1 mH E Single-Pulse Avalanche Energy 45 mJ AS T = 25 C 6 C T = 70 C 3.8 C P Maximum Power Dissipation W D a, b T = 25 C 2.9 A a, b T = 70 C 1.9 A T , T Operating Junction and Storage Temperature Range - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit a, c R Maximum Junction-to-Ambient t 10 s 36 43 thJA C/W R Maximum Junction-to-Foot Steady State 16 21 thJF Notes: a. Surface mounted on 1 x 1 FR4 board. b. t = 10 s. c. Maximum under steady state conditions is 84 C/W. d. Based on T = 25 C. C Document Number: 62828 For technical questions, contact: pmostechsupport vishay.com www.vishay.com S13-0110-Rev. A, 21-Jan-13 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000New Product Si4101DY Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J Parameter Symbol Test Conditions Min. Typ.Max.Unit Static Drain-Source Breakdown Voltage V V = 0 V, I = - 250 A - 30 V DS GS D V Temperature Coefficient V /T - 20 DS DS J I = - 250 A mV/C D V Temperature Coefficient V /T 5.3 GS(th) GS(th) J Gate-Source Threshold Voltage V V = V , I = - 250 A - 1 - 2.5 V GS(th) DS GS D Gate-Source Leakage I V = 0 V, V = 20 V 100 nA GSS DS GS V = - 30 V, V = 0 V - 1 DS GS Zero Gate Voltage Drain Current I A DSS V = - 30 V, V = 0 V, T = 55 C - 5 DS GS J a I V - 10 V, V = - 10 V - 30 A On-State Drain Current D(on) DS GS V = - 10 V, I = - 15 A 0.0050 0.0060 GS D a R Drain-Source On-State Resistance DS(on) V = - 4.5 V, I = - 10 A 0.0066 0.0080 GS D a g V = - 10 V, I = - 15 A 72 S Forward Transconductance fs DS D b Dynamic C Input Capacitance 8190 iss C V = - 15 V, V = 0 V, f = 1 MHz Output Capacitance 772 pF oss DS GS C Reverse Transfer Capacitance 715 rss V = - 15 V, V = - 10 V, I = - 18 A 135 203 DS GS D Q Total Gate Charge g 65 85 nC Q V = - 15 V, V = - 4.5 V, I = - 18 A Gate-Source Charge 22.5 gs DS GS D Q Gate-Drain Charge 17.6 gd R Gate Resistance f = 1 MHz 0.4 2 4 g t Turn-On Delay Time 20 30 d(on) t V = - 15 V, R = 1.5 Rise Time 918 r DD L t I - 10 A, V = - 10 V, R = 1 Turn-Off DelayTime 80 120 d(off) D GEN g t Fall Time 11 20 f ns t Turn-On Delay Time 72 108 d(on) t V = - 15 V, R = 1.5 Rise Time 60 90 r DD L t I - 10 A, V = - 4.5 V, R = 1 Turn-Off DelayTime 60 90 d(off) D GEN g t Fall Time 23 35 f Drain-Source Body Diode Characteristics Continous Source-Drain Diode Current I T = 25 C - 5 S C A Pulse Diode Forward Current I - 70 SM Body Diode Voltage V I = - 3 A, V = 0 V - 0.78 - 1.2 V SD S GS Body Diode Reverse Recovery Time t 29 45 ns rr Body Diode Reverse Recovery Charge Q 19 29 nC rr I = - 10 A, dI/dt = 100 A/s, T = 25 C F J Reverse Recovery Fall Time t 13 a ns Reverse Recovery Rise Time t 16 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com For technical questions, contact: pmostechsupport vishay.com Document Number: 62828 2 S13-0110-Rev. A, 21-Jan-13 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000