SiS890DN Vishay Siliconix N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET f V (V) R () (Max.) I (A) Q (Typ.) DS DS(on) D g 100 % R and UIS Tested g g 0.0235 at V = 10 V 30 Capable of Operating with 5 V Gate Drive GS g 100 0.0245 at V = 7.5 V 30 9.5 nC Material categorization: GS For definitions of compliance please see 0.0315 at V = 4.5 V 28.5 GS www.vishay.com/doc 99912 PowerPAK 1212-8 APPLICATIONS Telecom Bricks D Primary side switch S 3.30 mm 3.30 mm 1 S Synchronous Rectification 2 S Industrial 3 G 4 G D 8 D 7 D 6 D 5 S Bottom View N-Channel MOSFET Ordering Information: SiS890DN-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol Limit Unit V Drain-Source Voltage 100 DS V V Gate-Source Voltage 20 GS g T = 25 C 30 C T = 70 C 26.5 C Continuous Drain Current (T = 150 C) I J D a, b T = 25 C 8.8 A a, b T = 70 C 7.1 A A Pulsed Drain Current (t = 300 s) I 60 DM g T = 25 C 30 C Continuous Source-Drain Diode Current I S a, b T = 25 C 3.1 A Single Pulse Avalanche Current I 10 AS L = 0.1 mH Single Pulse Avalanche Energy E 5 mJ AS T = 25 C 52 C T = 70 C 33 C Maximum Power Dissipation P W D a, b T = 25 C 3.7 A a, b T = 70 C 2.4 A T , T Operating Junction and Storage Temperature Range - 55 to 150 J stg C c, d Soldering Recommendations (Peak Temperature) 260 THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit a, e Maximum Junction-to-Ambient t 10 s R 26 33 thJA C/W R Maximum Junction-to-Case (Drain) Steady State 1.9 2.4 thJC Notes: a. Surface mounted on 1 x 1 FR4 board. b. t = 10 s. c. See solder profile (www.vishay.com/doc 73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. d. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. e. Maximum under steady state conditions is 81 C/W. f. Based on T = 25 C. C g. Package limited. Document Number: 63867 For technical questions, contact: pmostechsupport vishay.com www.vishay.com S12-0973-Rev. A, 30-Apr-12 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000SiS890DN Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 100 V DS GS D V Temperature Coefficient V /T 63 DS DS J I = 250 A mV/C D V Temperature Coefficient V /T - 5.5 GS(th) GS(th) J Gate-Source Threshold Voltage V V = V , I = 250 A 1.5 3 V GS(th) DS GS D Gate-Source Leakage I V = 0 V, V = 20 V 100 nA GSS DS GS V = 100 V, V = 0 V 1 DS GS Zero Gate Voltage Drain Current I A DSS V = 100 V, V = 0 V, T = 55 C 10 DS GS J a On-State Drain Current I V 5 V, V = 10 V 20 A D(on) DS GS V 10 V, I = 10 A 0.0195 0.0235 GS D a Drain-Source On-State Resistance R V 7.5 V, I = 7 A 0.0204 0.0245 DS(on) GS D V 4.5 V, I = 5 A 0.0260 0.0315 GS D a Forward Transconductance g V = 15 V, I = 10 A 25 S fs DS D b Dynamic Input Capacitance C 802 iss Output Capacitance C 291V = 50 V, V = 0 V, f = 1 MHz pF oss DS GS Reverse Transfer Capacitance C 39 rss V = 50 V, V = 10 V, I = 10 A 19.1 29 DS GS D Total Gate Charge Q V = 50 V, V = 7.5 V, I = 10 A 14.7 22 g DS GS D 9.5 14.5 nC V = 50 V, V = 4.5 V, I = 10 A Gate-Source Charge Q 2.8 DS GS D gs Gate-Drain Charge Q 4.9 gd Output Charge Q V = 50 V, V = 0 V 23 35 oss DS GS R Gate Resistance f = 1 MHz 0.2 0.9 1.8 g Turn-On Delay Time t 10 20 d(on) Rise Time t 1224 r V = 50 V, R = 5 DD L I 10 A, V = 7.5 V, R = 1 t Turn-Off Delay Time D GEN g 16 32 d(off) Fall Time t 918 f ns t Turn-On Delay Time 918 d(on) Rise Time t 1020 r V = 50 V, R = 5 DD L I 10 A, V = 10 V, R = 1 Turn-Off Delay Time t D GEN g 16 32 d(off) Fall Time t 816 f Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current I T = 25 C 30 S C A Pulse Diode Forward Current I 60 SM Body Diode Voltage V I = 4 A, V 0 V 0.78 1.2 V SD S GS Body Diode Reverse Recovery Time t 34 68 ns rr Body Diode Reverse Recovery Charge Q 34 68 nC rr I = 10 A, dI/dt = 100 A/s, T = 25 C F J Reverse Recovery Fall Time t 19.5 a ns Reverse Recovery Rise Time t 14.5 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com For technical questions, contact: pmostechsupport vishay.com Document Number: 63867 2 S12-0973-Rev. A, 30-Apr-12 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000