New Product SiSA04DN Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 f V (V) R () (Max.) I (A) Q (Typ.) DS DS(on) D g Definition g 0.00215 at V = 10 V 40 GS TrenchFET Gen IV Power MOSFET 30 22.5 nC g 0.0031 at V = 4.5 V 40 100 % R and UIS Tested GS g Compliant to RoHS Directive 2002/95/EC PowerPAK 1212-8 APPLICATIONS Switch Mode Power Supplies S 3.30 mm 3.30 mm 1 Personal Computers and Servers S D 2 S Telecom Bricks 3 G 4 VRMs and POL D 8 D 7 G D 6 D 5 Bottom View S Ordering Information: N-Channel MOSFET SiSA04DN-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol Limit Unit V Drain-Source Voltage 30 DS V V Gate-Source Voltage + 20, - 16 GS g T = 25 C 40 C g T = 70 C 40 C I Continuous Drain Current (T = 150 C) D J a, b T = 25 C 30.9 A a, b T = 70 C 28.3 A A I Pulsed Drain Current (t = 300 s) 80 DM g T = 25 C 40 C I Continuous Source-Drain Diode Current S a, b T = 25 C 3.3 A I Single Pulse Avalanche Current 20 AS L = 0.1 mH E Single Pulse Avalanche Energy 20 mJ AS T = 25 C 52 C T = 70 C 43 C P Maximum Power Dissipation W D a, b T = 25 C 3.7 A a, b T = 70 C 3.1 A Operating Junction and Storage Temperature Range T , T - 55 to 150 J stg C c, d Soldering Recommendations (Peak Temperature) 260 THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit a, e t 10 s R Maximum Junction-to-Ambient 24 33 thJA C/W Maximum Junction-to-Case (Drain) Steady State R 1.9 2.4 thJC Notes: a. Surface mounted on 1 x 1 FR4 board. b. t = 10 s. c. See solder profile (www.vishay.com/doc 73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. d. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. e. Maximum under steady state conditions is 81 C/W. f. Based on T = 25 C. C g. Package limited. Document Number: 63709 www.vishay.com S12-0309-Rev. A, 13-Feb-12 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000New Product SiSA04DN Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 30 V DS GS D V /T V Temperature Coefficient 14 DS J DS I = 250 A mV/C D V /T V Temperature Coefficient - 5.5 GS(th) J GS(th) V V = V , I = 250 A Gate-Source Threshold Voltage 1.1 2.2 V GS(th) DS GS D I V = 0 V, V = + 20 V, - 16 V Gate-Source Leakage 100 nA GSS DS GS V = 30 V, V = 0 V 1 DS GS I Zero Gate Voltage Drain Current A DSS V = 30 V, V = 0 V, T = 55 C 10 DS GS J a I V 5 V, V = 10 V On-State Drain Current 40 A D(on) DS GS V 10 V, I = 15 A 0.0018 0.00215 GS D a R Drain-Source On-State Resistance DS(on) V 4.5 V, I = 10 A 0.0025 0.0031 GS D a Forward Transconductance g V = 15 V, I = 15 A 105 S fs DS D b Dynamic C Input Capacitance 3595 iss C Output Capacitance 1040 pF oss V = 15 V, V = 0 V, f = 1 MHz DS GS C Reverse Transfer Capacitance 79 rss C /C Ratio 0.022 0.044 rss iss V = 15 V, V = 10 V, I = 10 A 51 77 DS GS D Q Total Gate Charge g 22.5 34 Gate-Source Charge Q V = 15 V, V = 4.5 V, I = 10 A 8.6 nC gs DS GS D Q Gate-Drain Charge 4 gd Output Charge Q V = 15 V, V = 0 V 30.5 oss DS GS R Gate Resistance f = 1 MHz 0.3 1.25 2.5 g t Turn-On Delay Time 24 48 d(on) Rise Time t 17 34 V = 15 V, R = 1.5 r DD L I 10 A, V = 4.5 V, R = 1 t Turn-Off Delay Time D GEN g 25 50 d(off) t 10 20 Fall Time f ns t Turn-On Delay Time 12 24 d(on) t Rise Time V = 15 V, R = 1.5 10 20 r DD L 10 A, V = 10 V, R = 1 I Turn-Off Delay Time t D GEN g 30 60 d(off) t Fall Time 816 f Drain-Source Body Diode Characteristics I Continuous Source-Drain Diode Current T = 25 C 40 S C A I Pulse Diode Forward Current 80 SM Body Diode Voltage V I = 5 A, V 0 V 0.73 1.1 V SD S GS t Body Diode Reverse Recovery Time 36 70 ns rr Q Body Diode Reverse Recovery Charge 24 48 nC rr I = 10 A, dI/dt = 100 A/s, T = 25 C F J t Reverse Recovery Fall Time 16 a ns t Reverse Recovery Rise Time 20 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 % b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 63709 2 S12-0309-Rev. A, 13-Feb-12 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000