SiS892DN Vishay Siliconix N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 f V (V) R ( )I (A) Q (Typ.) DS DS(on) D g Definition g 0.029 at V = 10 V 30 GS TrenchFET Power MOSFET 100 6.7 nC 0.042 at V = 4.5 V 25 GS 100 % R Tested g 100 % UIS Tested PowerPAK 1212-8 Compliant to RoHS Directive 2002/95/EC APPLICATIONS S D 3.30 mm 3.30 mm 1 DC/DC Primary Side Switch S 2 Telecom/Server 48 V S 3 G DC/DC Converter 4 D 8 D G 7 D 6 D 5 Bottom View S Ordering Information: SiS892DN-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol Limit Unit Drain-Source Voltage V 100 DS V Gate-Source Voltage V 20 GS g T = 25 C 30 C T = 70 C 27 C Continuous Drain Current (T = 150 C) I J D a, b T = 25 C 8.0 A a, b T = 70 C 7.3 A A Pulsed Drain Current I 50 DM g T = 25 C 30 C Continuous Source-Drain Diode Current I S a, b T = 25 C 3.1 A Single Pulse Avalanche Current I 10 AS L = 0.1 mH Single Pulse Avalanche Energy E 5 mJ AS T = 25 C 52 C T = 70 C 43 C Maximum Power Dissipation P W D a, b T = 25 C 3.7 A a, b T = 70 C 3.1 A Operating Junction and Storage Temperature Range T , T - 55 to 150 J stg C c, d Soldering Recommendations (Peak Temperature) 260 THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit a, e Maximum Junction-to-Ambient t 10 s R 26 33 thJA C/W Maximum Junction-to-Case (Drain) Steady State R 1.9 2.4 thJC Notes: a. Surface mounted on 1 x 1 FR4 board. b. t = 10 s. c. See solder profile (www.vishay.com/ppg 73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. d. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. e. Maximum under steady state conditions is 81 C/W. f. Based on T = 25 C. C g. Package limited. Document Number: 66590 www.vishay.com S10-2682-Rev. B, 22-Nov-10 1SiS892DN Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 100 V DS GS D V Temperature Coefficient V /T 44 DS DS J I = 250 A mV/C D V Temperature Coefficient V /T - 5.5 GS(th) GS(th) J Gate-Source Threshold Voltage V V = V , I = 250 A 1.2 3.0 V GS(th) DS GS D Gate-Source Leakage I V = 0 V, V = 20 V 100 nA GSS DS GS V = 100 V, V = 0 V 1 DS GS Zero Gate Voltage Drain Current I A DSS V = 100 V, V = 0 V, T = 55 C 10 DS GS J a On-State Drain Current I V 5 V, V = 10 V 20 A D(on) DS GS V 10 V, I = 10 A 0.024 0.029 GS D a Drain-Source On-State Resistance R DS(on) V 4.5 V, I = 7 A 0.034 0.042 GS D a Forward Transconductance g V = 15 V, I = 10 A 22 S fs DS D b Dynamic Input Capacitance C 611 iss Output Capacitance C 404V = 50 V, V = 0 V, f = 1 MHz pF oss DS GS Reverse Transfer Capacitance C 36 rss V = 50 V, V = 10 V, I = 10 A 14.2 21.5 DS GS D Total Gate Charge Q g 6.7 10 nC Gate-Source Charge Q 1.6V = 50 V, V = 4.5 V, I = 10 A gs DS GS D Gate-Drain Charge Q 3.6 gd Gate Resistance R f = 1 MHz 1.0 5.5 10 g Turn-On Delay Time t 10 20 d(on) Rise Time t 1326 r V = 50 V, R = 5 DD L I 10 A, V = 7.5 V, R = 1 Turn-Off Delay Time t 17D GEN g 34 d(off) Fall Time t 816 f ns Turn-On Delay Time t 816 d(on) Rise Time t 1122 V = 50 V, R = 5 r DD L I 10 A, V = 10 V, R = 1 Turn-Off Delay Time t 21D GEN g 40 d(off) Fall Time t 918 f Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current I T = 25 C 30 S C A Pulse Diode Forward Current I 50 SM Body Diode Voltage V I = 5 A, V 0 V 0.81 1.2 V SD S GS Body Diode Reverse Recovery Time t 32 64 ns rr 31 62 nC Body Diode Reverse Recovery Charge Q rr I = 5 A, dI/dt = 100 A/s, T = 25 C F J Reverse Recovery Fall Time t 17 a ns Reverse Recovery Rise Time t 15 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 66590 2 S10-2682-Rev. B, 22-Nov-10