Doc No. TT4-EA-14209 Revision. 5 Product Standards MOS FET SK8403170L SK8403170L Silicon N-channel MOS FET Unit : mm 3.25 For Load-switching / For DC-DC Converter 3.05 0.22 8 7 6 5 Features Low Drain-source On-state Resistance : RDS(on) typ = 3.9 m (VGS = 4.5 V) Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL : Level 1 compliant) 1 234 0.3 1.0 Marking Symbol : 17 0.65 Packaging Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard) 1. Source 5. Drain 2. Source 6. Drain 3. Source 7. Drain 4. Gate 8. Drain Absolute Maximum Ratings Ta = 25 C Panasonic HSSO8-F1-B JEITA Parameter Symbol Rating Unit Drain to Source Voltage VDS 30 Code V Gate to Source Voltage VGS 20 *1 24 Ta = 25 C, t = 10 s *1 16 Internal Connection Ta = 25 C, DC Drain Current ID A 59 Tc = 25 C 88 77 66 55 *2 72 Pulsed, Tch < 150 C *1 Total Power 2 Ta = 25 C, DC PD W Dissipation 24.6 Tc = 25 C Channel to Ambient Rth(ch-a) 62.5 Thermal Resistance C / W Channel to Case Rth(ch-c) 5.1 Channel Temperature Tch 150 Operating ambient temperature Topr -40 to +85 C 11 22 33 44 Storage Temperature Range Tstg -55 to +150 *3 IAR 12 A Avalanche Current (Single pulse) Pin Name *3 EAR 18 mJ Avalanche Energy (Single pulse) Note *1 Device mounted on a glass-epoxy board in Figure 1 1. Source 5. Drain *2 2. Source 6. Drain Pulse test: Ensure that the channel temperature does not exceed 150 C *3 VDD = 24 V, VGS = 10 to 0 V, L = 0.1 mH, Tch = 25 C (initial) 3. Source 7. Drain 4. Gate 8. Drain Figure 1 FR4 Glass-Epoxy Board 25.4 mm 25.4 mm 0.8 mm Page 1 of 6 Established : 2012-09-08 Revised : 2013-05-31 0.25 3.05 3.3Doc No. TT4-EA-14209 Revision. 5 Product Standards MOS FET SK8403170L Electrical Characteristics Ta = 25 C 3 C Static Characteristics Parameter Symbol Conditions Min Typ Max Unit Drain-source Breakdown Voltage VDSS ID = 1 mA, VGS = 0 V 30 V Zero Gate Voltage Drain Current IDSS VDS = 30 V, VGS = 0 V 10 A Gate-source Leakage Current IGSS VGS = 16 V, VDS = 0 V 10 A Gate-source Threshold Voltage Vth ID = 2.56 mA, VDS = 10 V 1.3 3 V RDS(on)1 ID = 12 A, VGS = 10 V 2.9 4.1 Drain-source On-state Resistance m RDS(on)2 ID = 12 A, VGS = 4.5 V 3.9 5.8 Dynamic Characteristics Parameter Symbol Conditions Min Typ Max Unit Input Capacitance Ciss 2 100 2 940 VDS = 10 V, VGS = 0 V Output Capacitance Coss 250 350 pF f = 1 MHz Reverse Transfer Capacitance Crss 180 290 *1 td(on) VDD = 15 V, VGS = 0 to 10 V 11 Turn-on Delay Time ns *1 tr ID = 12 A 10 Rise Time *1 td(off) VDD = 15 V, VGS = 10 to 0 V 48 Turn-off Delay Time ns *1 ID = 12 A tf 7 Fall Time Total Gate Charge Qg 17 VDD = 15 V, VGS = 0 to 4.5 V Gate to Source Charge Qgs 6 nC ID = 12 A Gate to Drain Charge Qgd 7 Gate resistance rg f = 5 MHz 1.2 3 Body Diode Characteristic Parameter Symbol Conditions Min Typ Max Unit Diode Forward Voltage VSD IS = 12 A, VGS = 0 V 0.8 1.2 V Note 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors. 2. *1 Measurement circuit for Turn-on Delay Time / Rise Time / Turn-off Delay Time / Fall Time Page 2 of 6 Established : 2012-09-08 Revised : 2013-05-31