X-On Electronics has gained recognition as a prominent supplier of SM6K2T110 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SM6K2T110 MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SM6K2T110 ROHM

SM6K2T110 electronic component of ROHM
SM6K2T110 ROHM
SM6K2T110 MOSFETs
SM6K2T110  Semiconductors

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See Product Specifications
Part No. SM6K2T110
Manufacturer: ROHM
Category: MOSFETs
Description: Mosfet Array 2 N-Channel (Dual) 60V 200mA 300mW Surface Mount SMT6
Datasheet: SM6K2T110 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3000: USD 0.1269 ea
Line Total: USD 380.7 
Availability - 0
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
0
Ship by Fri. 11 Apr to Thu. 17 Apr
MOQ : 3000
Multiples : 3000
3000 : USD 0.1824
6000 : USD 0.1638
15000 : USD 0.1526
30000 : USD 0.1447
75000 : USD 0.1431

0
Ship by Fri. 11 Apr to Thu. 17 Apr
MOQ : 1
Multiples : 1
1 : USD 0.5219
10 : USD 0.4237
100 : USD 0.3164
500 : USD 0.2486
1000 : USD 0.1921

0
Ship by Fri. 11 Apr to Thu. 17 Apr
MOQ : 1
Multiples : 1
1 : USD 0.5219
10 : USD 0.4237
100 : USD 0.3164
500 : USD 0.2486
1000 : USD 0.1921

0
Ship by Fri. 11 Apr to Thu. 17 Apr
MOQ : 3000
Multiples : 3000
3000 : USD 0.1269
6000 : USD 0.1199
9000 : USD 0.1186
12000 : USD 0.1178
15000 : USD 0.115

0
Ship by Fri. 11 Apr to Thu. 17 Apr
MOQ : 3000
Multiples : 3000
3000 : USD 0.09

0
Ship by Wed. 09 Apr to Fri. 11 Apr
MOQ : 3000
Multiples : 3000
3000 : USD 0.1415
9000 : USD 0.1319
24000 : USD 0.1266
45000 : USD 0.1234

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Mounting Style
Package / Case
Packaging
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
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We are delighted to provide the SM6K2T110 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SM6K2T110 and other electronic components in the MOSFETs category and beyond.

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SM6K2 Transistors 4V Drive Nch+Nch MOS FET SM6K2 z Structure z External dimensions (Unit : mm) Silicon N-channel SMT6 2.9 MOSFET transistor 1.1 1.9 0.95 0.95 0.8 ( ) ( ) ( ) 4 5 6 z Features 1) Two RHU002N06 chips in a SMT package. ( ) ( ) ( ) 3 2 1 2) Mounting possible with SMT3 automatic mounting machines. 1pin mark 0.3 0.15 3) Transistor elements are independent, eliminating mutual Each lead has same dimensions interference. 4) Mounting cost and area can be cut in half. Abbreviated symbol : K2 z Packaging specifications z Equivalent circuit (4) (5) (6) Package Taping 1 Code T110 Type Basic ordering unit (pieces) 3000 2 SM6K2 (1) TR1 Drain (2) TR2 Gate 2 (3) TR2 Source (4) TR2 Drain (5) TR1 Gate (6) TR1 Source 1 1 Gate Protection Diode 2 Body Diode (3) (2) (1) A protection diode has been built in between the gate and the source to protect against static electricity z Absolute maximum ratings (Ta=25C) when the product is in use. Use the protection circuit when fixed voltages are exceeded. <It is the same ratings for the Tr1 and Tr2.> Parameter Symbol Limits Unit Drain-source voltage VDSS 60 V VGSS 20 V Gate-source voltage Continuous ID 200 mA Drain current 1 IDP 800 mA Pulsed mA Continuous IDR 200 Drain reverse current 1 IDRP 800 mA Pulsed 300 mW / TOTAL 2 PD Total power dissipation 200 mW / ELEMENT Channel temperature Tch 150 C Storage temperature Tstg 55 to +150 C 1 Pw10s, Duty cycle1% 2 With each pin mounted on the recommended lands. z Thermal resistance Parameter Symbol Limits Unit 416.7 C / W / TOTAL Channel to ambient Rth(ch-a) 625 C / W / ELEMENT With each pin mounted on the recommended lands. Rev.B 1/4 1.6 2.8 0.3Min.SM6K2 Transistors z Electrical characteristics (Ta=25C) <It is the same characteristics for the Tr1 and Tr2.> Parameter Symbol Min. Typ. Max. Unit Test Conditions IGSS 10 A VGS=20V, VDS=0V Gate leakage current Drain-source breakdown voltage V (BR) DSS 60 V ID=1mA, VGS=0V Drain cutoff current IDSS 1 A VDS=60V, VGS=0V Gate threshold voltage VGS (th) 1 2.5 V VDS=10V, ID=1mA 1.7 2.4 ID=200mA, VGS=10V Drain-source on-state resistance RDS (on) 2.8 4.0 ID=200mA, VGS=4V Forward transfer admittance l Yfs l 0.1 S VDS=10V, ID=200mA Input capacitance Ciss 15 pF VDS=10V Output capacitance Coss 8 pF VGS=0V f=1MHz Reverse transfer capacitance Crss 4 pF Turn-on delay time td (on) 6 ns ID=100mA, VDD 30V Rise time 5 ns tr VGS=10V RL=300 Turn-off delay time 12 ns td (off) RG =10 95 ns Fall time tf 2.2 4.4 nC Total gate charge Qg VDD 30V 0.6 nC VGS=10V Gate-source charge Qgs ID=200mA 0.3 nC Gate-drain charge Qgd Pulsed z Body diode characteristics (Source-drain) (Ta=25C) <It is the same characteristics for the Tr1 and Tr2.> Parameter Symbol Min. Typ. Max. Unit Conditions Forward voltage VSD 1.2 V IS=200mA, VGS=0V Rev.B 2/4

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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