ES6U2 Datasheet Nch 20V 1.5A Small Signal MOSFET + Schottky Barrier Diode llOutline SOT-563T V 20V DSS R (Max.) 180m DS(on) WEMT6 I 1.5A D P 0.8W D llFeatures llInner circuit 1) Nch MOSFET and shottky barrier diode are put in WEMT6 package. 2) High-speed switching and Low on- resistance. 3) Low voltage drive(1.5V drive) 4) Built in Low V schottky barrier diode. F llPackaging specifications Embossed Packing Tape llApplication Reel size (mm) 180 Switching Tape width (mm) 8 Type Basic ordering unit (pcs) 8000 Taping code T2R Marking U02 llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a < MOSFET > Parameter Symbol Value Unit Drain - Source voltage V 20 V DSS V Gate - Source voltage 10 V GSS I Continuous drain current 1.5 A D *1 I Pulsed drain current 3 A DP I Continuous source current (body diode) 0.5 A S *1 I Pulsed source current (body diode) 3 A SP *2 P Power dissipation 0.7 W/element D T Junction temperature 150 j www.rohm.com 1/12 2016 ROHM Co., Ltd. All rights reserved. 20160711 - Rev.001 ObsoleteES6U2 Datasheet llAbsolute maximum ratings (T = 25C) a < Diode > Parameter Symbol Value Unit V Repetitive peak reverse voltage 25 V RM V Reverse voltage 20 V R I Forward current 0.5 A F *3 I Forward current surge peak 2.0 A FSM *2 P Power dissipation 0.5 W/element D T Junction temperature 150 j < MOSFET + Diode > Parameter Symbol Value Unit *2 P Power dissipation 0.8 W/total D T Operating junction and storage temperature range -55 to +150 stg llElectrical characteristics (T = 25C) a < MOSFET > Values Parameter Symbol Conditions Unit Min. Typ. Max. I Gate - Source leakage current V = 10V, V = 0V - - 10 A GSS GS DS Drain - Source breakdown V V = 0V, I = 1mA 20 - - V (BR)DSS GS D voltage Zero gate voltage I V = 20V, V = 0V - - 1 A DSS DS GS drain current V Gate threshold voltage V = 10V, I = 1mA 0.3 - 1.0 V GS(th) DS D V = 4.5V, I = 1.5A - 130 180 GS D V = 2.5V, I = 1.5A - 170 240 GS D Static drain - source *4 R m DS(on) on - state resistance V = 1.8V, I = 0.8A - 220 310 GS D V = 1.5V, I = 0.3A - 300 600 GS D Forward Transfer *4 Y V = 10V, I = 1.5A 1.6 - - S fs DS D Admittance www.rohm.com 2/12 20160711 - Rev.001 2016 ROHM Co., Ltd. All rights reserved. Obsolete