X-On Electronics has gained recognition as a prominent supplier of ES6U41T2R MOSFETs across the USA, India, Europe, Australia, and various other global locations. ES6U41T2R MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

ES6U41T2R ROHM

ES6U41T2R electronic component of ROHM
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See Product Specifications
Part No.ES6U41T2R
Manufacturer: ROHM
Category: MOSFETs
Description: ROHM Semiconductor MOSFET
Datasheet: ES6U41T2R Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 0.91
10 : USD 0.7871
100 : USD 0.2356
500 : USD 0.1895
1000 : USD 0.1504
2500 : USD 0.1394
5000 : USD 0.1324
8000 : USD 0.1213
24000 : USD 0.1173
N/A

Obsolete
0
MOQ : 52
Multiples : 1
52 : USD 0.2028
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Series
Brand
Configuration
Transistor Type
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the ES6U41T2R from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the ES6U41T2R and other electronic components in the MOSFETs category and beyond.

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ES6U41 Datasheet Nch 30V 1.5A Small Signal MOSFET + Schottky Barrier Diode llOutline SOT-563T V 30V DSS R (Max.) 240m DS(on) WEMT6 I 1.5A D P 0.8W D llFeatures llInner circuit 1) Nch MOSFET and shottky barrier diode are put in WEMT6 package. 2) High-speed switching and Low on- resistance. 3) Low voltage drive(2.5V drive) 4) Built in Low V schottky barrier diode. F llPackaging specifications Embossed Packing Tape llApplication Reel size (mm) 180 Switching Tape width (mm) 8 Type Basic ordering unit (pcs) 8000 Taping code T2R Marking U41 llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a < MOSFET > Parameter Symbol Value Unit Drain - Source voltage V 30 V DSS V Gate - Source voltage 12 V GSS I Continuous drain current 1.5 A D *1 I Pulsed drain current 6.0 A DP I Continuous source current (body diode) 0.75 A S *1 I Pulsed source current (body diode) 6.0 A SP *2 P Power dissipation 0.7 W/element D T Junction temperature 150 j www.rohm.com 1/12 2016 ROHM Co., Ltd. All rights reserved. 20160711 - Rev.001 ObsoleteES6U41 Datasheet llAbsolute maximum ratings (T = 25C) a < Diode > Parameter Symbol Value Unit V Repetitive peak reverse voltage 25 V RM V Reverse voltage 20 V R I Forward current 0.5 A F *3 I Forward current surge peak 2.0 A FSM *2 P Power dissipation 0.5 W/element D T Junction temperature 150 j < MOSFET + Diode > Parameter Symbol Value Unit *2 P Power dissipation 0.8 W/total D T Operating junction and storage temperature range -55 to +150 stg llElectrical characteristics (T = 25C) a < MOSFET > Values Parameter Symbol Conditions Unit Min. Typ. Max. I Gate - Source leakage current V = 12V, V = 0V - - 10 A GSS GS DS Drain - Source breakdown V V = 0V, I = 1mA 30 - - V (BR)DSS GS D voltage Zero gate voltage I V = 30V, V = 0V - - 1 A DSS DS GS drain current V V = 10V, I = 1mA Gate threshold voltage 0.5 - 1.5 V GS(th) DS D V = 4.5V, I = 1.5A - 170 240 GS D Static drain - source *4 R V = 4V, I = 1.5A - 180 250 m DS(on) GS D on - state resistance V = 2.5V, I = 1.5A - 240 340 GS D Forward Transfer *4 Y V = 10V, I = 1.5A 1.5 - - S fs DS D Admittance www.rohm.com 2/12 20160711 - Rev.001 2016 ROHM Co., Ltd. All rights reserved. Obsolete

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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