2.5V Drive Pch+SBD MOSFET ES6U42 z Structure z Dimensions (Unit : mm) Silicon P-channel MOSFET / WEMT6 Schottky barrier diode (6) (5) (4) z Features 1) Pch MOSFET and schottky barrier diode are put in WEMT6 package. (1) (2) (3) 2) High-speed switching, Low On-resistance. 3) Low voltage drive (2.5V drive). 4) Built-in Low VF schottky barrier diode. Abbreviated symbol : U42 zApplications Switching z Package specifications z Inner circuit Package Taping (6) (5) (4) Type Code T2R Basic ordering unit (pieces) 8000 ES6U42 2 (1)Gate (2)Source 1 (3)Anode (4)Cathode (1) (2) (3) (5)Drain 1 ESD protection diode (6)Drain 2 Body diode z Absolute maximum ratings (Ta=25C) <MOSFET> Parameter Symbol Limits Unit Drain-source voltage V 20 V DSS Gate-source voltage VGSS 12 V Continuous ID 1.0 A Drain current 1 I A Pulsed DP 4.0 Source current Continuous IS A 0.4 (Body diode) 1 Pulsed ISP A 4.0 Tch C Channel temperature 150 2 Power dissipation PD 0.7 W / ELEMENT 1 Pw10s, Duty cycle1% 2 Mounted on a ceramic board <Di> Parameter Symbol Limits Unit V 25 V Repetitive peak reverse voltage RM Reverse voltage VR 20 V I 0.5 Forward current F A 1 I 2.0 Forward current surge peak FSM A Junction temperature Tj 150 C 2 P 0.5 Power dissipation D W / ELEMENT 1 60Hz 1cycle 2 Mounted on a ceramic board <MOSFET and Di> Parameter Symbol Limits Unit Power dissipation P 0.8 W / TOTAL D Range of storage temperature Tstg 55 to +150 C Mounted on a ceramic board www.rohm.com c 2009.01 - Rev.A 2009 ROHM Co., Ltd. All rights reserved. 1/5 ES6U42 Data Sheet z Electrical characteristics (Ta=25C) <MOSFET> Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage I GSS 10 AVGS= 12V, VDS=0V Drain-source breakdown voltage V(BR) DSS 20 VI = 1mA, V =0V D GS Zero gate voltage drain current IDSS 1 AVDS= 20V, VGS=0V Gate threshold voltage V GS (th) 0.7 2.0 V VDS= 10V, ID= 1mA 280 390 m I = 1A, V = 4.5V D GS Static drain-source on-state R DS (on) 310 430 m ID= 1A, VGS= 4V resistance 570 800 m ID= 0.5A, VGS= 2.5V Forward transfer admittance Yfs 0.7 SVDS= 10V, ID= 0.5A Input capacitance C iss 150 pF VDS= 10V Output capacitance Coss 20 pF V = 0V GS Reverse transfer capacitance Crss 20 pF f= 1MHz Turn-on delay time td (on) 9 ns VDD 15V VGS= 4.5V Rise time tr 8 ns ID= 0.5A Turn-off delay time t d (off) 25 ns RL 30 Fall time tf 10 ns RG= 10 Total gate charge Qg 2.1 nC VDD 15V, VGS= 4.5V Gate-source charge Q gs 0.5 nC ID= 1A, RL 15 Gate-drain charge Qgd0.5 nC RG= 10 Pulsed <Body diode characteristics (Source-drain)> Parameter Symbol Min. Typ. Max. Unit Conditions Forward voltage VSD 1.2 V IS= 1.0A, VGS=0V Pulsed <Di> Parameter Symbol Min. Typ. Max. Unit Conditions 0.36 V I = 0.1A F Forward voltage VF 0.52 V IF= 0.5A Reverse current IR 100 A V = 20V R www.rohm.com c 2009.01 - Rev.A 2009 ROHM Co., Ltd. All rights reserved. 2/5