AO4407A 30V P-Channel MOSFET General Description Product Summary The AO4407A uses advanced trench technology to V = -30V DS provide excellent R , and ultra-low low gate charge I = -12A (V = -20V) DS(ON) D GS with a 25V gate rating. This device is suitable for use as R < 11m (V = -20V) DS(ON) GS a load switch or in PWM applications. R < 13m (V = -10V) DS(ON) GS R < 17m (V = -6V) DS(ON) GS * RoHS and Halogen-Free Complaint 100% UIS Tested 100% Rg Tested SOIC-8 D Top View Bottom View D D D D GG GG SS SS SS S Absolute Maximum Ratings T =25C unless otherwise noted A Parameter Symbol Maximum Units Drain-Source Voltage V -30 V DS Gate-Source Voltage V 25 V GS T =25C Continuous Drain -12 A A T =70C I Current -10 A D A B Pulsed Drain Current I -60 DM G Avalanche Current I -26 AR G mJ Repetitive avalanche energy L=0.3mH E 101 AR T =25C 3.1 A A P W Power Dissipation D T =70C 2.0 A Junction and Storage Temperature Range T , T -55 to 150 C J STG Thermal Characteristics Parameter Symbol Typ Max Units A Maximum Junction-to-Ambient t 10s 32 40 C/W R JA A Maximum Junction-to-Ambient Steady State 60 75 C/W C R 17 24 C/W Maximum Junction-to-Lead Steady State JL RReevv..1111..00 JJuunnee 22001133 wwwwww..aaoossmmdd..ccoommElectrical Characteristics (T =25C unless otherwise noted) J Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV Drain-Source Breakdown Voltage I = -250A, V = 0V -30 V DSS D GS V = -30V, V = 0V -1 DS GS I Zero Gate Voltage Drain Current A DSS T = 55C -5 J V = 0V, V = 25V I Gate-Body leakage current 100 nA GSS DS GS V = V I = -250A V Gate Threshold Voltage -1.7 -2.3 -3 V DS GS D GS(th) V = -10V, V = -5V I On state drain current -60 A GS DS D(ON) V = -20V, I = -12A 8.5 11 GS D T =125C 11.5 15 J R Static Drain-Source On-Resistance m DS(ON) V = -10V, I = -12A 10 13 GS D V = -6V, I = -10A 12.7 17 GS D g Forward Transconductance V = -5V, I = -10A 21 S FS DS D V Diode Forward Voltage I = -1A,V = 0V -0.7 -1 V SD S GS I Maximum Body-Diode Continuous Current -3 A S DYNAMIC PARAMETERS C Input Capacitance 2060 2600 pF iss V =0V, V =-15V, f=1MHz C Output Capacitance 370 pF GS DS oss C Reverse Transfer Capacitance 295 pF rss R Gate resistance V =0V, V =0V, f=1MHz 2.4 3.6 g GS DS SWITCHING PARAMETERS Q Total Gate Charge 30 39 nC g VV ==-1-100VV,, VV ==-1-155VV,, II ==-1-122AA QQ GGaattee SSoouurcrcee CChhaargrgee 44..66 nnCC gs GS DS D Q Gate Drain Charge 10 nC gd t Turn-On DelayTime 11 ns D(on) t Turn-On Rise Time V =-10V, V =-15V, R =1.25, 9.4 ns r GS DS L R =3 t Turn-Off DelayTime 24 ns GEN D(off) t Turn-Off Fall Time 12 ns f t I =-12A, dI/dt=100A/s 30 40 rr Body Diode Reverse Recovery Time F ns Q I =-12A, dI/dt=100A/s 22 nC rr Body Diode Reverse Recovery Charge F 2 A: The value of R is measured with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T = 25C. The JA A value in any given application depends on the user s specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R is the sum of the thermal impedence from junction to lead R and lead to ambient. JA JL D. The static characteristics in Figures 1 to 6 are obtained using < 300s pulses, duty cycle 0.5% max. 2 E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T =25C. The SOA A curve provides a single pulse rating. F. The current rating is based on the t 10s thermal resistance rating. G. E and I ratings are based on low frequency and duty cycles to keep T =25C. AR AR j THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. RReevv..1111..00 JJuunnee 22001133 wwwwww..aaoossmmdd..ccoomm