AO4886 Electrical Characteristics (T =25C unless otherwise noted) J Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV Drain-Source Breakdown Voltage I =250A, V =0V 100 V D GS DSS V =100V, V =0V 1 DS GS I Zero Gate Voltage Drain Current A DSS T =55C 5 J V =0V, V = 20V I Gate-Body leakage current 100 nA GSS DS GS V V =V I =250A Gate Threshold Voltage 1.6 2.2 2.7 V GS(th) DS GS D I On state drain current V =10V, V =5V 17 A GS DS D(ON) V =10V, I =3A 63.5 80 GS D m R Static Drain-Source On-Resistance T =125C 122 152 DS(ON) J V =4.5V, I =3A 70 91 m GS D V =5V, I =3A g Forward Transconductance 20 S FS DS D V Diode Forward Voltage I =1A,V =0V 0.74 1 V S GS SD I Maximum Body-Diode Continuous Current 2.5 A S DYNAMIC PARAMETERS C Input Capacitance 620 778 942 pF iss V =0V, V =50V, f=1MHz C Output Capacitance 38 55 81 pF oss GS DS C Reverse Transfer Capacitance 13 24 35 pF rss R Gate resistance V =0V, V =0V, f=1MHz 0.7 1.45 2.2 g GS DS SWITCHING PARAMETERS Q (10V) Total Gate Charge 13 16.3 20 nC g Q (4.5V) Total Gate Charge 6.4 8.1 10 nC g V =10V, V =50V, I =3A GS DS D Q Gate Source Charge 2.2 2.8 3.4 nC gs Q Gate Drain Charge 2.4 4.1 5.8 nC gd t Turn-On DelayTime 6 ns D(on) tt TTuurrnn--OOnn RRiissee TTiimmee VV ==1100VV,, VV ==5500VV,, RR ==1166..77,, 22..55 nnss r GS DS L R =3 t Turn-Off DelayTime 21 ns D(off) GEN t Turn-Off Fall Time 2.4 ns f t I =3A, dI/dt=500A/s 14 21 28 rr Body Diode Reverse Recovery Time F ns Q I =3A, dI/dt=500A/s 65 94 123 nC rr Body Diode Reverse Recovery Charge F 2 A. The value of R is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T =25 C. The JA A value in any given application depends on the user s specific board design. B. The power dissipation P is based on T =150 C, using 10s junction-to-ambient thermal resistance. D J(MAX) C. Repetitive rating, pulse width limited by junction temperature T =150 C. Ratings are based on low frequency and duty cycles to keep J(MAX) initialT =25 C. J D. The R is the sum of the thermal impedence from junction to lead R and lead to ambient. JA JL E. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max. 2 F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in FR-4 board with 2oz. Copper, assuming a maximum junction temperature of T =150 C. The SOA curve provides a single pulse rating. J(MAX) THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 0: Sep 2010 www.aosmd.com Page 2 of 6