AOT12N65/AOTF12N65/AOB12N65 650V, 12A N-Channel MOSFET General Description Product Summary V 750V 150 The AOT12N65 & AOTF12N65 & AOB12N65 have been DS fabricated using an advanced high voltage MOSFET I (at V =10V) 12A D GS process that is designed to deliver high levels of R (at V =10V) < 0.72 DS(ON) GS performance and robustness in popular AC-DC applications. By providing low R , C and C along with DS(on) iss rss guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. 100% UIS Tested 100% R Tested g Top View D TO-263 TO-220 TO-220F 2 D PAK D S S G D S D G G G S AOT12N65 AOTF12N65 AOB12N65 Orderable Part Number Package Type Form Minimum Order Quantity AOT12N65 TO-220 Pb Free Tube 1000 AAOOTTFF1122NN6655 TTOO--222200FF PPbb FFrreeee TTuubbee 11000000 AOTF12N65L TO-220F Green Tube 1000 AOB12N65L TO-263 Green Tape & Reel 800 Absolute Maximum Ratings T =25C unless otherwise noted A Parameter Symbol AOT(B)12N65 AOTF12N65 AOTF12N65L Units Drain-Source Voltage V 650 V DS Gate-Source Voltage V 30 V GS T =25C 12 12* 12* C Continuous Drain I D Current T =100C 7.7 7.7* 7.7* A C C Pulsed Drain Current I 48 DM C Avalanche Current I 5 A AR C Repetitive avalanche energy E 375 mJ AR G Single plused avalanche energy E 750 mJ AS MOSFET dv/dt ruggedness 30 dv/dt V/ns Peak diode recovery dv/dt 5 T =25C 278 50 40 W C P D B o o Power Dissipation Derate above 25 C 2.2 0.4 0.3 W/ C Junction and Storage Temperature Range T , T -55 to 150 C J STG Maximum lead temperature for soldering T 300 C purpose, 1/8 from case for 5 seconds L Thermal Characteristics Parameter Symbol AOT(B)12N65 AOTF12N65 AOTF12N65L Units A,D Maximum Junction-to-Ambient R 65 65 65 C/W JA A R Maximum Case-to-sink CS 0.5 -- -- C/W Maximum Junction-to-Case R 0.45 2.5 3.1 C/W JC * Drain current limited by maximum junction temperature. www.aosmd.com Rev.7.0: December 2014 Page 1 of 6 Electrical Characteristics (T =25C unless otherwise noted) J Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS I =250A, V =0V, T =25C 650 D GS J BV Drain-Source Breakdown Voltage DSS I =250A, V =0V, T =150C 750 V D GS J BV Breakdown Voltage Temperature DSS o I =250A, V =0V 0.72 D GS V/ C Coefficient /TJ V =650V, V =0V 1 DS GS I Zero Gate Voltage Drain Current A DSS V =520V, T =125C 10 DS J V =0V, V =30V I Gate-Body leakage current 100 n GSS DS GS V Gate Threshold Voltage V =5V I =250A 3 3.9 4.5 V GS(th) DS D R Static Drain-Source On-Resistance V =10V, I =6A 0.57 0.72 GS D DS(ON) g Forward Transconductance V =40V, I =6A 17 S DS D FS V Diode Forward Voltage I =1A,V =0V 0.71 1 V SD S GS I Maximum Body-Diode Continuous Current 12 A S I Maximum Body-Diode Pulsed Current 48 A SM DYNAMIC PARAMETERS C Input Capacitance 1430 1792 2150 pF iss V =0V, V =25V, f=1MHz C Output Capacitance 120 152 185 pF GS DS oss C Reverse Transfer Capacitance 9 11.5 18 pF rss R Gate resistance V =0V, V =0V, f=1MHz 1.7 3.5 5.3 GS DS g SWITCHING PARAMETERS Q Total Gate Charge 32 39.8 48 nC g V =10V, V =520V, I =12A Q Gate Source Charge GS DS D 7.5 9.2 11 nC gs Q Gate Drain Charge 13.5 16.8 20 nC gd t Turn-On DelayTime 36 ns D(on) t Turn-On Rise Time V =10V, V =325V, I =12A, 77 ns GS DS D r R =25 t Turn-Off DelayTime 120 ns G D(off) t Turn-Off Fall Time 63 ns f t I =12A,dI/dt=100A/s,V =100V 300 375 rr Body Diode Reverse Recovery Time F DS 450 ns Q I =12A,dI/dt=100A/s,V =100V 6 7.5 C F DS rr Body Diode Reverse Recovery Charge 9 A. The value of R is measured with the device in a still air environment with T =25C. JA A B. The power dissipation P is based on T =150C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation D J(MAX) limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature T =150C, Ratings are based on low frequency and duty cycles to keep initial T J(MAX) J =25C. D. The R is the sum of the thermal impedence from junction to case R and case to ambient. JA JC E. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T =150C. The SOA curve provides a single pulse rating. J(MAX) G. L=60mH, I =5A, V =150V, R =25, Starting T =25C AS DD G J THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. www.aosmd.com Rev.7.0: December 2014 Page 2 of 6