AO3413 20V P-Channel MOSFET GGeenneerraall DDeessccrriippttiioonn FFeeaattuurreess TThhee AAOO33441133 uusseess aaddvvaanncceedd ttrreenncchh tteecchhnnoollooggyy ttoo VV == --2200VV DDSS pprroovviiddee eexxcceelllleenntt RR ,, llooww ggaattee cchhaarrggee aanndd II == --33AA ((VV == --44..55VV)) DDSS((OONN)) DD GGSS -15 ooppeerraattiioonn wwiitthh ggaattee vvoollttaaggeess aass llooww aass 11..88VV.. TThhiiss RR << 8800mm ((VV ==-- 44..55VV)) DDSS((OONN)) GGSS ddeevviiccee iiss ssuuiittaabbllee ffoorr uussee aass aa llooaadd sswwiittcchh oorr iinn PPWWMM RR << 110000mm ((VV == --22..55VV)) DDSS((OONN)) GGSS aapppplliiccaattiioonnss.. RR << 113300mm ((VV == --11..88VV)) DDSS((OONN)) GGSS SSOOTT2233 TToopp VViieeww BBoottttoomm VViieeww DD DD DD GG SS GG SS SS GG Absolute Maximum Ratings T =25C unless otherwise noted A Parameter Symbol Maximum Units Drain-Source Voltage V -20 V DS Gate-Source Voltage V 8 V GS T =25C -3 Continuous Drain A I D A Current T =70C -2.4 A A B Pulsed Drain Current I -15 DM T =25C 1.4 A P W D A Power Dissipation T =70C 0.9 A Junction and Storage Temperature Range T , T -55 to 150 C J STG Thermal Characteristics Parameter Symbol Typ Max Units A Maximum Junction-to-Ambient t 10s 70 90 C/W R JA A Maximum Junction-to-Ambient Steady-State 100 125 C/W C R 63 80 C/W Maximum Junction-to-Lead Steady-State JL www.aosmd.com Page 1 of 5 Rev 9: July 2010AO3413 Electrical Characteristics (T =25C unless otherwise noted) J Symbol Parameter Conditions Min Typ Max Units I =-250A, V =0V BV Drain-Source Breakdown Voltage -20 V D GS DSS V =-20V, V =0V -1 DS GS I Zero Gate Voltage Drain Current DSS A T =55C -5 J I Gate-Body leakage current V =0V, V =8V 100 nA DS GS GSS V =V I =-250A V Gate Threshold Voltage -0.4 -0.65 -1 V DS GS D GS(th) V =-4.5V, V =-5V I On state drain current -15 A GS DS D(ON) V =-4.5V, I =-3A 56 80 GS D m T =125C 80 115 J R Static Drain-Source On-Resistance DS(ON) V =-2.5V, I =-2.6A 70 100 m GS D V =-1.8V, I =-1A 85 130 m GS D V =-5V, I =-3A g Forward Transconductance 12 S DS D FS I =-1A,V =0V V Diode Forward Voltage -0.7 -1 V SD S GS I Maximum Body-Diode Continuous Current -1.4 A S DYNAMIC PARAMETERS C Input Capacitance 560 745 pF iss V =0V, V =-10V, f=1MHz C Output Capacitance 80 pF GS DS oss C Reverse Transfer Capacitance 70 pF rss R Gate resistance V =0V, V =0V, f=1MHz 15 23 g GS DS SWITCHING PARAMETERS Q Total Gate Charge 8.5 11 nC g V =-4.5V, V =-10V, I =-3A Q Gate Source Charge 1.2 nC GS DS D gs Q Gate Drain Charge 2.1 nC gd t Turn-On DelayTime 7.2 ns D(on) tt TTuurrnn--OOnn RRiissee TTiimmee VV ==--44..55VV,, VV ==--1100VV,, RR ==33..33,, 3366 nnss rr GGSS DDSS LL R =6 t Turn-Off DelayTime 53 ns GEN D(off) t Turn-Off Fall Time 56 ns f t I =-3A, dI/dt=100A/s 37 49 rr Body Diode Reverse Recovery Time F ns Q I =-3A, dI/dt=100A/s nC rr Body Diode Reverse Recovery Charge F 27 2 A: The value of R is measured with the device mounted on 1 in FR-4 board with 2oz. copper, in a still air environment with T =25 C. The JA A value in any given application depends on the user s specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R is the sum of the thermal impedence from junction to lead R and lead to ambient. JA JL D. The static characteristics in Figures 1 to 6 are obtained using 300s pulse width, duty cycle 0.5% max. 2 E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T =25 C. The SOA A curve provides a single pulse rating. 12 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. wwwwww..aaoossmmdd..ccoomm PPaaggee 22 ooff 55 RReevv 99:: JJuullyy 22001100