X-On Electronics has gained recognition as a prominent supplier of AO3415 MOSFETs across the USA, India, Europe, Australia, and various other global locations. AO3415 MOSFETs are a product manufactured by Alpha & Omega. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

AO3415 Alpha & Omega

AO3415 electronic component of Alpha & Omega
AO3415 Alpha & Omega
AO3415 MOSFETs
AO3415  Semiconductors

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See Product Specifications
Part No. AO3415
Manufacturer: Alpha & Omega
Category: MOSFETs
Description: MOSFET P Trench 20V 4A 1V @ 250uA 43 mΩ @ 4A,4.5V SOT-23-3L RoHS
Datasheet: AO3415 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
5: USD 0.0967 ea
Line Total: USD 0.48 
Availability - 0
MOQ: 5  Multiples: 5
Pack Size: 5
Availability Price Quantity
0
Ship by Tue. 15 Apr to Mon. 21 Apr
MOQ : 6000
Multiples : 6000
6000 : USD 0.1871

0
Ship by Tue. 15 Apr to Mon. 21 Apr
MOQ : 1
Multiples : 1
1 : USD 0.8877

0
Ship by Tue. 15 Apr to Mon. 21 Apr
MOQ : 1
Multiples : 1
1 : USD 0.8877

0
Ship by Tue. 22 Apr to Fri. 25 Apr
MOQ : 5
Multiples : 5
5 : USD 0.0967
50 : USD 0.0781
150 : USD 0.0689
500 : USD 0.0619
3000 : USD 0.0564
6000 : USD 0.0535

0
Ship by Tue. 15 Apr to Mon. 21 Apr
MOQ : 3000
Multiples : 3000
3000 : USD 0.2218
6000 : USD 0.2196
9000 : USD 0.2174
15000 : USD 0.2152
24000 : USD 0.213
30000 : USD 0.2107

0
Ship by Tue. 15 Apr to Mon. 21 Apr
MOQ : 3000
Multiples : 3000
3000 : USD 0.515
6000 : USD 0.5099
9000 : USD 0.5046
12000 : USD 0.4996
15000 : USD 0.4944
30000 : USD 0.4893

   
Manufacturer
Product Category
Id - Continuous Drain Current
Transistor Polarity
Pd - Power Dissipation
Mounting Style
Channel Mode
Drain Current Max
Frequency Max
Gate-Source Voltage Max
Output Power Max
Noise Figure
Drain-Source On-Res
Operating Temp Range
Package Type
Pin Count
Type
Number Of Elements
Operating Temperature Classification
Drain Efficiency
Drain-Source On-Volt
Power Gain
Rad Hardened
Category
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We are delighted to provide the AO3415 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the AO3415 and other electronic components in the MOSFETs category and beyond.

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AO3415 20V P-Channel MOSFET General Description Product Summary V -20V The AO3415 uses advanced trench technology to provide DS excellent R , low gate charge and operation with gate DS(ON) I (at V =-4.5V) -4A D GS voltages as low as 1.8V. This device is suitable for use as R (at V = -4.5V) < 41m DS(ON) GS a load switch applications. R (at V = -2.5V) < 53m DS(ON) GS R (at V = -1.8V) < 65m DS(ON) GS ESD protected SOT23 D Top View Bottom View D G S S G Absolute Maximum Ratings T =25C unless otherwise noted A Parameter Symbol Maximum Units DDrraaiinn--SSoouurrccee VVoollttaaggee VV --2200 VV DDSS Gate-Source Voltage V 8 V GS T =25C -4 A Continuous Drain I D Current T =70C -3.5 A A C Pulsed Drain Current I -30 DM T =25C 1.5 A P W D B Power Dissipation T =70C 1 A Junction and Storage Temperature Range T , T -55 to 150 C J STG Thermal Characteristics Parameter Symbol Typ Max Units A Maximum Junction-to-Ambient t 10s 65 80 C/W R A D JA Maximum Junction-to-Ambient Steady-State 85 100 C/W Steady-State Maximum Junction-to-Lead R 43 52 C/W JL Rev 7: Sep 2011 www.aosmd.com Page 1 of 5 AO3415 Electrical Characteristics (T =25C unless otherwise noted) J Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV Drain-Source Breakdown Voltage I =-250A, V =0V -20 V D GS DSS V =-20V, V =0V -1 DS GS I Zero Gate Voltage Drain Current A DSS T =55C -5 J V =0V, V = 8V I Gate-Body leakage current 10 A GSS DS GS V V =V , I =-250 Gate Threshold Voltage -0.3 -0.57 -0.9 V GS(th) DS GS D I On state drain current V =-4.5V, V =-5V -30 A GS DS D(ON) V =-4.5V, I =-4A 34 41 GS D m T =125C 49 59 J R Static Drain-Source On-Resistance V =-2.5V, I =-4A 42 53 m DS(ON) GS D V =-1.8V, I =-2A 52 65 m GS D V =-1.5V, I =-1A 61 m GS D g Forward Transconductance V =-5V, I =-4A 20 S FS DS D V Diode Forward Voltage I =-1A,V =0V -0.64 -1 V SD S GS I Maximum Body-Diode Continuous Current -2 A S DYNAMIC PARAMETERS C Input Capacitance 600 751 905 pF iss C Output Capacitance V =0V, V =-10V, f=1MHz 80 115 150 pF GS DS oss C Reverse Transfer Capacitance 48 80 115 pF rss V =0V, V =0V, f=1MHz R Gate resistance 6 13 20 g GS DS SWITCHING PARAMETERS Q Total Gate Charge 7.4 9.3 11 nC g Q Gate Source Charge V =-4.5V, V =-10V, I =-4A 0.8 1 1.2 nC GS DS D gs Q Gate Drain Charge 1.3 2.2 3.1 nC gd tt TTuurrnn--OOnn DDeellaayyTTiimmee 1133 nnss D(on) t Turn-On Rise Time V =-4.5V, V =-10V, R =2.5, 9 ns r GS DS L R =3 t Turn-Off DelayTime 19 ns GEN D(off) t Turn-Off Fall Time 29 ns f t I =-4A, dI/dt=500A/s 20 26 32 rr Body Diode Reverse Recovery Time F ns Q I =-4A, dI/dt=500A/s 40 51 62 nC rr Body Diode Reverse Recovery Charge F 2 A. The value of R is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T =25 C. The JA A value in any given application depends on the user s specific board design. B. The power dissipation P is based on T =150 C, using 10s junction-to-ambient thermal resistance. D J(MAX) C. Repetitive rating, pulse width limited by junction temperature T =150 C. Ratings are based on low frequency and duty cycles to keep J(MAX) initialT =25 C. J D. The R is the sum of the thermal impedance from junction to lead R and lead to ambient. JA JL E. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max. 2 F. These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in FR-4 board with 2oz. Copper, assuming a maximum junction temperature of T =150 C. The SOA curve provides a single pulse rating. J(MAX) COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 7: Sep 2011 www.aosmd.com Page 2 of 5

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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