X-On Electronics has gained recognition as a prominent supplier of F20W60C3-7100 MOSFETs across the USA, India, Europe, Australia, and various other global locations. F20W60C3-7100 MOSFETs are a product manufactured by Shindengen. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

F20W60C3-7100 Shindengen

Name: F20W60C3-7100
Brand: Shindengen
SKU: F20W60C37100_Shindengen
Availability: OutOfStock
Rating: 5 (11 reviews)

F20W60C3-7100 electronic component of Shindengen

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Part No.	F20W60C3-7100
Manufacturer:	Shindengen
Category:	MOSFETs
Description:	MOSFET Hi Switching Speed High Voltage
Datasheet:	F20W60C3-7100 Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

N/A

Obsolete

F20W60C3-7100 More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 MOQ : 1 Multiples : 1	1 : USD 10.3808 10 : USD 6.8661 30 : USD 6.4933 120 : USD 6.193 270 : USD 5.6338 510 : USD 5.613 1020 : USD 5.4784 2520 : USD 5.3438 5010 : USD 5.2713		N/A Obsolete

We are delighted to provide the F20W60C3-7100 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the F20W60C3-7100 and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

PowerMOSFET OUTLINE Unitmm PackageMTO-3P F20W60C3 600V20A 0000 20W60C3 Feature LowRON FastSwitching Web Fordetailsoftheoutlinedimensions,refertoourwebsite.Asforthe marking,refertothespecificatioMarking,TerminalConnectio. RATINGS AbsoluteMaximumRatings Tc25 Item Symbol Conditions Ratings Unit Tstg 55150 StorageTemperature Tch 150 ChannelTemperature VDSS 600 Drain-SourceVoltage V VGSS 30 Drain-SourceVoltage I 20 D ContinuousDrainCurrent(DC) 10s,duty=1/100 I 60 DP ContinuousDrainCurrent(Peak) Pulsewidth10s,duty=1/100 A IS 20 ContinuousSourceCurrent(DC) PT 75 W TotalPowerDissipation 0.5Nm TOR 0.8 Nm MountingTorque (Recommendedtorque:0.5Nm) ElectricalCharacteristics Tc25 Ratings Item Symbol Conditions Unit MIN TYP MAX VBRDSS ID1mA,VGS0V 600 V Drain-SourceBreakdownVoltage IDSS VDS600V,VGS0V 25 ZeroGateVoltageDrainCurrent A IGSS VGS30V,VDS0V 0.1 Gate-SourceLeakageCurrent gfs I10A,V 10V 8.7 17.5 S D DS ForwardTransconductance R I10A,V 10V 0.16 0.19 DSON D GS StaticDrain-SourceOn-stateResistance VTH ID1mA,VDS10V 2.1 3.0 3.9 GateThressholdVoltage V VSD IS10A,VGS0V 1.5 Source-DrainDiodeForwadeVoltage jc 1.66 /W ThermalResistance Junctiontocase Qg VGS10V,ID20A,VDD400V 87 nC TotalGateCharge Ciss 2400 InputCapacitance Crss V 25V,V 0V,f1MHz 50 pF DS GS ReverseTransferCapacitance Coss 780 OutputCapacitance tdon 32 Turn-ondelaytime tr 60 I10A,V 150V,R15 Risetime D DD L ns VGS10V,VGS0V tdoff 355 Turn-offdelaytime tf 60 Falltime 0.6/W TheJunctionTemperatureiscalculatedfromthecasetemperature,thermalresistancevalueuses0.6/W.UseintheSafeOperatingAreaforinputcurrentandvoltage. MOSFET2010.06 www.shindengen.co.jp/product/semi/F20W60C3 CHARACTERISTICDIAGRAMS Typical Output Characteristics Transfer Characteristics Static Drain-Source On-static Resistance vs Drain Current Static Drain-Source On-static Resistance vs Case Temperature Gate Threshold Voltage vs Case emperature Safe Operating Area Transient Thermal Impedance Capacitance Characteristics Power Derating - Case Temperature Gate Charge Characteristics Sinewave50Hz 50Hzsinewaveisusedformeasurements. MOSFET2010.06 www.shindengen.co.jp/product/semi/

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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Manufacturer Shindengen Shindengen
Product Category MOSFETs MOSFETs
RoHS - XON y y
Id - Continuous Drain Current 20 A 20 A
Vds - Drain-Source Breakdown Voltage 600 V 600 V
Rds On - Drain-Source Resistance 0.19 Ohms 0.19 Ohms
Transistor Polarity n - channel n - channel
Vgs - Gate-Source Breakdown Voltage 30 V 30 V
Minimum Operating Temperature - 55 C - 55 C
Maximum Operating Temperature + 150 C + 150 C
Pd - Power Dissipation 75 W 75 W
Mounting Style through hole through hole
Package / Case M TO - 3P - 3 M TO - 3P - 3
Packaging Tube Tube
Technology si si
Vgs - Gate-Source Voltage 30 V 30 V
Qg - Gate Charge 87 nC 87 nC
Brand Shindengen Shindengen
Forward Transconductance - Min 8.7 s 8.7 s
Fall Time 60 ns 60 ns
Rise Time 60 ns 60 ns
Factory Pack Quantity : 30 30
Typical Turn-Off Delay Time 355 ns 355 ns
Cnhts 8541210000 8541210000
Hts Code 8541290095 8541290095
Mxhts 85412999 85412999
Product Type mosfet mosfet
Subcategory Mosfets Mosfets
Taric 8541290000 8541290000
Typical Turn-On Delay Time 32 ns 32 ns