SPA08N80C3 TM CoolMOS Power Transistor Product Summary Features V 800 V DS New revolutionary high voltage technology R T = 25C 0.65 DS(on)max j Extreme dv/dt rated Q 45 nC g,typ High peak current capability 1) Qualified according to JEDEC for target applications Pb-free lead plating RoHS compliant Ultra low gate charge Ultra low effective capacitances Fully isolated package (2500 VAC 1 minute) TM CoolMOS 800V designed for: Industrial application with high DC bulk voltage Switching Application ( i.e. active clamp forward ) Type Package Marking SPA08N80C3 PG-TO220FP 08N80C3 Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit 2) I T =25 C 8 A Continuous drain current D C T =100 C 5.1 C 3) I T =25 C 24 Pulsed drain current D,pulse C E I =1.6 A, V =50 V Avalanche energy, single pulse 340 mJ AS D DD 3),4) Avalanche energy, repetitive t E I =8 A, V =50 V 0.2 AR D DD AR 3),4) I 8 Avalanche current, repetitive t A AR AR MOSFET dv /dt ruggedness dv /dt V =0640 V 50 V/ns DS V 20 Gate source voltage static V GS AC (f >1 Hz) 30 P T =25 C 40 Power dissipation W tot C Operating and storage temperature T , T -55 ... 150 C j stg Mounting torque M2.5 screws 50 Ncm Rev. 3.2 Page 1 2018-02-12SPA08N80C3 Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit I 8 Continuous diode forward current A S T =25 C C 2) I 24 Diode pulse current S,pulse 4) dv /dt 4 V/ns Reverse diode dv /dt Values Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics R Thermal resistance, junction - case - - 3.8 K/W thJC Thermal resistance, junction - R leaded - - 80 thJA ambient Soldering temperature, 1.6 mm (0.063 in.) T - - 260 C sold wave soldering only allowed at leads from case for 10s Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics V V =0 V, I =250 A Drain-source breakdown voltage 800 - - V (BR)DSS GS D V V =0 V, I =8 A Avalanche breakdown voltage - 870 - (BR)DS GS D V V =V , I =0.47 mA Gate threshold voltage 2.1 3 3.9 GS(th) DS GS D V =800 V, V =0 V, DS GS I Zero gate voltage drain current - - 20 A DSS T =25 C j V =800 V, V =0 V, DS GS - 100 - T =150 C j I V =20 V, V =0 V Gate-source leakage current - - 100 nA GSS GS DS V =10 V, I =5.1 A, GS D R Drain-source on-state resistance - 0.56 0.65 DS(on) T =25 C j V =10 V, I =5.1 A, GS D - 1.5 - T =150 C j R Gate resistance f =1 MHz, open drain - 1.2 - G Rev. 3.2 Page 2 2018-02-12