X-On Electronics has gained recognition as a prominent supplier of SN7002WH6327XTSA1 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SN7002WH6327XTSA1 MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SN7002WH6327XTSA1 Infineon

SN7002WH6327XTSA1 electronic component of Infineon
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Part No.SN7002WH6327XTSA1
Manufacturer: Infineon
Category: MOSFETs
Description: N-Channel 60 V 230mA (Ta) 500mW (Ta) Surface Mount PG-SOT323
Datasheet: SN7002WH6327XTSA1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.1859 ea
Line Total: USD 0.19 
Availability - 22653
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
22653
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 0.1859
10 : USD 0.1276
100 : USD 0.0671
1000 : USD 0.0616
3000 : USD 0.0451
9000 : USD 0.0407

2364
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 0.476
10 : USD 0.2674
50 : USD 0.1764
100 : USD 0.1484
243 : USD 0.07

5147
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 1667
Multiples : 1
1667 : USD 0.057
2500 : USD 0.0554
5000 : USD 0.0538

5820
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 486
Multiples : 1
486 : USD 0.0837
509 : USD 0.0799
1000 : USD 0.0654
2000 : USD 0.0632
3000 : USD 0.059
6000 : USD 0.0589

29100
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 0.0524
6000 : USD 0.0517
9000 : USD 0.0441
15000 : USD 0.0437
21000 : USD 0.043
30000 : USD 0.0427

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Height
Length
Series
Transistor Type
Width
Brand
Forward Transconductance - Min
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the SN7002WH6327XTSA1 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SN7002WH6327XTSA1 and other electronic components in the MOSFETs category and beyond.

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SN7002W SIPMOS Small-Signal-Transistor Product Summary Feature V 60 V DS N-Channel R 5 DS(on) Enhancement mode I 0.23 A D Logic Level PG-SOT-323 dv/dt rated Drain pin 3 Gate Qualified according to AEC Q101 pin1 Source Halogen-free according to IEC61249-2-21 pin 2 Type Package Pb-free Tape and Reel Information Marking PG-SOT-323 Yes SN7002W H6327: 3000 pcs/reel sSN SN7002W PG-SOT-323 Yes H6433: 10000 pcs/reel sSN Maximum Ratings, at T = 25 C, unless otherwise specified j Parameter Symbol Value Unit A Continuous drain current I D T =25C 0.23 A T =70C 0.18 A 0.92 Pulsed drain current I D puls T =25C A Reverse diode dv/dt dv/dt 6 kV/s I =0.23A, V =48V, di/dt=200A/s, T =150C S DS jmax V Gate source voltage V 20 GS ESD class (JESD22-A114-HBM) 0 (<250V) 0.5 W Power dissipation P tot T =25C A C Operating and storage temperature T , T -55... +150 j stg IEC climatic category DIN IEC 68-1 55/150/56 Rev. 2.5 Page 1 2011-07-13SN7002W Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics - - 250 K/W Thermal resistance, junction - ambient R thJS at minimal footprint Electrical Characteristics, at T = 25 C, unless otherwise specified j Parameter Symbol Values Unit min. typ. max. Static Characteristics 60 - - V Drain-source breakdown voltage V (BR)DSS V =0, I =250A GS D 0.8 1.4 1.8 Gate threshold voltage, V = V V GS DS GS(th) I =26A D A Zero gate voltage drain current I DSS V =60V, V =0, T =25C - - 0.1 DS GS j V =60V, V =0, T =150C - - 5 DS GS j - - 10 nA Gate-source leakage current I GSS V =20V, V =0 GS DS - 4.1 7.5 Drain-source on-state resistance R DS(on) V =4.5V, I =0.2A GS D - 2.3 5 Drain-source on-state resistance R DS(on) V =10V, I =0.23A GS D Rev. 2.5 Page 2 2011-07-13

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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