SiS430DN Vishay Siliconix N-Channel 25-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free a V (V) R () Q (Typ.) I (A) DS DS(on) g D TrenchFET Power MOSFET 0.0051 at V = 10 V 35 100 % R Tested GS g 25 13 nC 100 % UIS Tested 0.0069 at V = 4.5 V 35 GS APPLICATIONS PowerPAK 1212-8 DC/DC Converter - POL - Server S 3.30 mm 3.30 mm D 1 S 2 S 3 G 4 D 8 D G 7 D 6 D 5 S Bottom View N-Channel MOSFET Ordering Information: SiS430DN-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol Limit Unit Drain-Source Voltage V 25 DS V Gate-Source Voltage V 20 GS a T = 25 C 35 C a T = 70 C 35 C Continuous Drain Current (T = 150 C) I J D b, c T = 25 C 21.5 A A b, c T = 70 C 17 A Pulsed Drain Current I 60 DM Avalanche Current I 30 AS L = 0.1 mH Avalanche Energy E mJ 45 AS a T = 25 C 35 C Continuous Source-Drain Diode Current I A S b, c T = 25 C 3.2 A T = 25 C 52 C T = 70 C 33 C Maximum Power Dissipation P W D b, c T = 25 C 3.8 A b, c T = 70 C A 2 T , T Operating Junction and Storage Temperature Range - 55 to 150 J stg C d, e Soldering Recommendations (Peak Temperature) 260 THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, f t 10 s R 24 33 Maximum Junction-to-Ambient thJA C/W Maximum Junction-to-Case (Drain) Steady State R 1.9 2.4 thJC Notes: a. Package Limited. b. Surface Mounted on 1 x 1 FR4 board. c. t = 10 s. d. See Solder Profile (SiS430DN Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min. Typ.Max.Unit Static V V = 0 V, I = 250 A Drain-Source Breakdown Voltage 25 V DS GS D V /T V Temperature Coefficient 25 DS J DS I = 250 A mV/C D V /T V Temperature Coefficient - 5.5 GS(th) J GS(th) V V = V , I = 250 A Gate-Source Threshold Voltage 1.2 2.5 V GS(th) DS GS D I V = 0 V, V = 20 V Gate-Source Leakage 100 nA GSS DS GS V = 25 V, V = 0 V 1 DS GS Zero Gate Voltage Drain Current I A DSS V = 25 V, V = 0 V, T = 55 C 5 DS GS J a On-State Drain Current I V 5 V, V = 10 V 20 A D(on) DS GS V = 10 V, I = 20 A 0.0042 0.0051 GS D a R Drain-Source On-State Resistance DS(on) V = 4.5 V, I = 18.5 A 0.0056 0.0069 GS D a g V = 15 V, I = 20 A Forward Transconductance 61 S fs DS D b Dynamic Input Capacitance C 1600 iss C V = 12.5 V, V = 0 V, f = 1 MHz Output Capacitance 410 pF oss DS GS Reverse Transfer Capacitance C 155 rss V = 12.5 V, V = 10 V, I = 20 A 26.5 40 DS GS D Q Total Gate Charge g 13 19.5 nC Gate-Source Charge Q 4.6 V = 12.5 V, V = 4.5 V, I = 20 A gs DS GS D Q Gate-Drain Charge 4.1 gd Gate Resistance R f = 1 MHz 1.5 3 g t Turn-On Delay Time 20 30 d(on) t Rise Time V = 12.5 V, R = 1.25 12 20 r DD L I 10 A, V = 4.5 V, R = 1 t Turn-Off Delay Time D GEN g 25 40 d(off) t Fall Time 10 15 f ns t Turn-On Delay Time 10 15 d(on) t Rise Time V = 12.5 V, R = 1.25 10 15 r DD L I 10 A, V = 10 V, R = 1 t Turn-Off Delay Time D GEN g 20 30 d(off) t Fall Time 10 15 f Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current I T = 25 C 35 S C A I Pulse Diode Forward Current 60 SM Body Diode Voltage V I = 10 A, V = 0 V 0.8 1.2 V SD S GS t Body Diode Reverse Recovery Time 35 55 ns rr Body Diode Reverse Recovery Charge Q 35 55 nC rr I = 10 A, dI/dt = 100 A/s, T = 25 C F J t Reverse Recovery Fall Time 17 a ns Reverse Recovery Rise Time t 18 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 69025 2 S-82655-Rev. A, 03-Nov-08