SiR870ADP Vishay Siliconix N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET a V (V) R () Max. Q (Typ.) I (A) DS DS(on) g D 100 % R and UIS Tested g 0.0066 at V = 10 V 60 GS Material categorization: 0.0070 at V = 7.5 V For definitions of compliance please see 100 60 25.5 nC GS www.vishay.com/doc 99912 0.0105 at V = 4.5 V 60 GS APPLICATIONS PowerPAK SO-8 Fixed Telecom DC/DC Converter D S Primary and Secondary Side Switch 6.15 mm 5.15 mm 1 S 2 S 3 G 4 D G 8 D 7 D 6 D 5 S Bottom View N-Channel MOSFET Ordering Information: SiR870ADP-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol LimitUnit Drain-Source Voltage V 100 DS V V Gate-Source Voltage 20 GS a T = 25 C C 60 a T = 70 C C 60 Continuous Drain Current (T = 150 C) I J D b, c T = 25 C A 23.3 b, c T = 70 C A 18.2 A I Pulsed Drain Current (t = 100 s) 300 DM a T = 25 C C 60 I Continuous Source-Drain Diode Current S b, c T = 25 C A 5.6 I Single Pulse Avalanche Current 40 AS L = 0.1 mH E Single Pulse Avalanche Energy 80 mJ AS T = 25 C 104 C T = 70 C 66.6 C Maximum Power Dissipation P W D b, c T = 25 C A 6.25 b, c T = 70 C A 4 T , T Operating Junction and Storage Temperature Range - 55 to 150 J stg C d, e 260 Soldering Recommendations (Peak Temperature) THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, f R t 10 s 15 20 Maximum Junction-to-Ambient thJA C/W R Maximum Junction-to-Case (Drain) Steady State 0.9 1.2 thJC Notes: a. Package limited. b. Surface mounted on 1 x 1 FR4 board. c. t = 10 s. d. See solder profile (www.vishay.com/doc 73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 54 C/W. Document Number: 63657 For technical questions, contact: pmostechsupport vishay.com www.vishay.com S13-0831-Rev. B, 22-Apr-13 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000SiR870ADP Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J Parameter Symbol Test Conditions Min. Typ.Max.Unit Static V V = 0 V, I = 250 A Drain-Source Breakdown Voltage 100 V DS GS D V Temperature Coefficient V /T 56 DS DS J I = 250 A mV/C D V Temperature Coefficient V /T - 6 GS(th) GS(th) J V V = V , I = 250 A Gate-Source Threshold Voltage 1.5 3 V GS(th) DS GS D I V = 0 V, V = 20 V Gate-Source Leakage 100 nA GSS DS GS V = 100 V, V = 0 V 1 DS GS I Zero Gate Voltage Drain Current A DSS V = 100 V, V = 0 V, T = 55 C 10 DS GS J a I V 5 V, V = 10 V 30 A On-State Drain Current D(on) DS GS V = 10 V, I = 20 A 0.0055 0.0066 GS D a R V = 7.5 V, I = 20 A 0.0058 0.0070 Drain-Source On-State Resistance DS(on) GS D V = 4.5 V, I = 15 A 0.0075 0.0105 GS D a g V = 10 V, I = 20 A 68 S Forward Transconductance fs DS D b Dynamic Input Capacitance C 2866 iss C V = 50 V, V = 0 V, f = 1 MHz Output Capacitance 719 pF oss DS GS C Reverse Transfer Capacitance 66 rss V = 50 V, V = 10 V, I = 20 A 53.5 80 DS GS D Total Gate Charge Q V = 50 V, V = 7.5 V, I = 20 A 41 62 g DS GS D 25.2 38 nC Q Gate-Source Charge V = 50 V, V = 4.5 V, I = 20 A 10 gs DS GS D Q Gate-Drain Charge 10.6 gd Output Charge Q V = 50 V, V = 0 V 69 104 oss DS GS R Gate Resistance f = 1 MHz 0.3 1 2 g Turn-On Delay Time t 13 26 d(on) t Rise Time V = 50 V, R = 2.5 14 28 r DD L I 20 A, V = 10 V, R = 1 Turn-Off Delay Time t 35 70 D GEN g d(off) t Fall Time 918 f ns Turn-On Delay Time t 17 34 d(on) t Rise Time V = 50 V, R = 2.5 15 30 r DD L I 20 A, V = 7.5 V, R = 1 Turn-Off Delay Time t D GEN g 33 65 d(off) t Fall Time 918 f Drain-Source Body Diode Characteristics I T = 25 C Continuous Source-Drain Diode Current 60 S C A Pulse Diode Forward Current (t = 100 s) I 300 p SM V I = 5 A Body Diode Voltage 0.74 1.1 V SD S t Body Diode Reverse Recovery Time 54 100 ns rr Q Body Diode Reverse Recovery Charge 76 140 nC rr I = 20 A, dI/dt = 100 A/s, T = 25 C F J t Reverse Recovery Fall Time 27 a ns t Reverse Recovery Rise Time 27 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com For technical questions, contact: pmostechsupport vishay.com Document Number: 63657 2 S13-0831-Rev. B, 22-Apr-13 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000