NVMFS5113PL MOSFET Power, Single P-Channel -60 V, 14 m , -64 A Features Low R to Minimize Conduction Losses DS(on) www.onsemi.com High Current Capability Avalanche Energy Specified NVMFS5113PLWF Wettable Flanks Product V R I (BR)DSS DS(on) D NVM Prefix for Automotive and Other Applications Requiring 14 m 10 V 60 V 64 A Unique Site and Control Change Requirements AECQ101 22 m 4.5 V Qualified and PPAP Capable These Devices are PbFree, Halogen Free/BFR Free and are RoHS S (1, 2, 3) Compliant MAXIMUM RATINGS (T = 25C unless otherwise noted) J G (4) Parameter Symbol Value Unit PChannel DraintoSource Voltage V 60 V DSS GatetoSource Voltage V 20 V GS D (5, 6) Continuous Drain Cur- T = 25C I 64 A C D rent R (Notes 1, 2, 3) JC T = 100C 45 C Steady MARKING State Power Dissipation R T = 25C P 150 W D JC C DIAGRAM (Notes 1, 2) T = 100C 75 C D Continuous Drain Cur- I A T = 25C 10 A D S D 1 rent R (Notes 1, 2, 3) JA XXXXXX S T = 100C 7 A Steady AYWZZ DFN5 S State Power Dissipation R T = 25C P 3.8 W JA A D CASE 488AA G D (Notes 1, 2) STYLE 1 T = 100C 1.9 D A Pulsed Drain Current T = 25C, t = 10 s I 415 A A p DM A = Assembly Location Operating Junction and Storage Temperature T , T 55 to C Y = Year J stg 175 W = Work Week ZZ = Lot Traceability Source Current (Body Diode) I 150 A S Single Pulse DraintoSource Avalanche E 315 mJ AS Energy (T = 25C, V = 50 V, V = 10 V, J DD GS ORDERING INFORMATION I = 46 A, L = 0.3 mH, R = 25 ) L(pk) G See detailed ordering, marking and shipping information on Lead Temperature for Soldering Purposes T 260 C page 5 of this data sheet. L (1/8 from case for 10 s) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit JunctiontoCase Steady State (Drain) R 1.0 C/W JC (Note 2) JunctiontoAmbient Steady State (Note 2) R 39 C/W JA 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2 2. Surfacemounted on FR4 board using a 650 mm , 2 oz. Cu pad. 3. Continuous DC current rating. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: July, 2019 Rev. 3 NVMFS5113PL/DNVMFS5113PL ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 60 V (BR)DSS GS D Zero Gate Voltage Drain Current I T = 25C 1.0 A DSS J V = 0 V, GS V = 60 V DS T = 125C 100 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 4) Gate Threshold Voltage V V = V , I = 250 A 1.5 2.5 V GS(TH) GS DS D DraintoSource On Resistance R V = 10 V, I = 17 A 10.5 14 m DS(on) GS D V = 4.5 V, I = 5 A 16 22 GS D Froward Transconductance g V = 15 V, I = 15 A 43 S FS DS D CHARGES AND CAPACITANCES Input Capacitance C V = 0 V, f = 1.0 MHz, 4400 pF iss GS V = 25 V DS Output Capacitance C 505 oss Reverse Transfer Capacitance C 319 rss Total Gate Charge Q V = 4.5 V 45 nC G(TOT) GS V = 48 V, DS I = 17 A D V = 10 V 83 GS Threshold Gate Charge Q 4 G(TH) GatetoSource Charge Q 13 GS V = 10 V, V = 48 V, GS DS I = 17 A D GatetoDrain Charge Q 27 GD Plateau Voltage V 3.5 V GP SWITCHING CHARACTERISTICS (Notes 4) TurnOn Delay Time t 15 ns d(on) Rise Time t 37 r V = 10 V, V = 48 V, GS DS I = 17 A, R = 2.5 D G TurnOff Delay Time t 54 d(off) Fall Time t 77 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V V = 0 V, T = 25C 0.79 1.0 V SD GS J I = 17 A S T = 125C 0.65 J Reverse Recovery Time t 41 ns RR Charge Time t 22 a V = 0 V, dl /dt = 100 A/ s, GS s I = 17 A s Discharge Time t 19 b Reverse Recovery Charge Q 50 nC RR Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. www.onsemi.com 2