DATA SHEET www.onsemi.com MOSFET - Power, Single V I MAX R MAX (BR)DDS D DS(on) N-Channel, PQFN8 67 A 4.0 m 10 V 120 V 120 V, 4.0 m , 114 A 33 A 8.0 m 6 V FDMS4D0N12C ELECTRICAL CONNECTION Features Small Footprint (5x6 mm) for Compact Design Low R to Minimize Conduction Losses DS(on) Low Q and Capacitance to Minimize Driver Losses G These are Pbfree, Halogen Free / BFR Free and are RoHS Compliant Typical Applications N-Channel MOSFET Synchronous Rectification ACDC and DCDC Power Supplies ACDC Adapters (USB PD) SR Load Switch MAXIMUM RATINGS (T = 25C, Unless otherwise specified) A Parameter Symbol Value Unit PQFN8 5x6 DraintoSource Voltage V 120 V DSS (Power 56) GatetoSource Voltage V 20 V CASE 483AF GS Continuous Drain Steady T = 25C I 114 A C D Current R State JC (Note 7) MARKING DIAGRAM Power Dissipation P 106 W D R (Note 2) JC Y&Z&3&K FDMS Continuous Drain Steady T = 25C I 18.5 A A D 4D0N12C Current R State JA (Note 6, 7) Power Dissipation P 2.7 W D R (Note 6, 7) JA Y = onsemi Logo &Z = Assembly Plant Code Pulsed Drain T = 25C, t = 10 s I 628 A A p DM &3 = Numeric Date Code Current &K = Lot Code Operating Junction and Storage T , T 55 to C J stg FDMS4D0N12C = Specific Device Code Temperature +150 Source Current (Body Diode) I 114 A S ORDERING INFORMATION Single Pulse DraintoSource Avalanche E 222 mJ AS See detailed ordering and shipping information on page 2 of Energy (I = 66.7 A, L = 0.1 mH) AV this data sheet. Lead Temperature Soldering Reflow for T 300 C L Soldering Purposes (1/8 from case for 10 s) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Semiconductor Components Industries, LLC, 2013 1 Publication Order Number: September, 2021 Rev. 3 FDMS4D0N12C/DFDMS4D0N12C ORDERING INFORMATION Device Package Shipping FDMS4D0N12C PQFN8 3,000 / Tape & Reel (PbFree) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. THERMAL RESISTANCE RATINGS Parameter Symbol Max Unit C/W Junction to Case Steady State (Note 7) R JC 1.18 Junction to Ambient Steady State (Note 7) 45 R JA ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Symbol Parameter Test Conditions Min Typ Max Unit OFF CHARACTERISTICS Drain to Source Breakdown Voltage 120 V V V = 0 V, I = 250 A (BR)DSS GS D mV/C Drain to Source Breakdown Voltage I = 250 A, ref to 25C 49 D V / T (BR)DSS J Temperature Coefficient Zero Gate Voltage Drain Current I V = 0 V, T = 25C 1 A DSS GS J V = 96 V DS T = 125C 100 A J Gate to Source Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 8) Gate Threshold Voltage V V V = V , I = 370 A 2.0 4.0 GS(TH) GS DS D I = 370 A, ref to 25C mV/C Negative Threshold Temperature V /T D 8.5 GS(TH) J Coefficient m V = 10 V, I = 67 A 3.3 4.0 GS D R Drain to Source On Resistance DS(on) V = 6 V, I = 33 A 4.7 8.0 GS D 144 Forward Transconductance g V = 5 V, I = 67 A S FS DS D 0.9 GateResistance T = 25C 1.8 R G A CHARGES & CAPACITANCES V = 0 V, f = 1 MHz, 4565 6460 pF Input Capacitance C GS ISS V = 60 V DS 2045 3060 Output Capacitance C OSS 17 24 Reverse Transfer Capacitance C RSS V = 6 V, V = 60 V, 36 51 nC Total Gate Charge Q GS DS G(TOT) I = 67 A D V = 10 V, V = 60 V, 58 82 Total Gate Charge Q GS DS G(TOT) I = 67 A D 21 GatetoSource Charge Q GS 9 GatetoDrain Charge Q GD 5 V Plateau Voltage V GP V = 60 V, V = 0 V 207 nC Output Charge Q DD GS OSS www.onsemi.com 2