X-On Electronics has gained recognition as a prominent supplier of FDMS4D0N12C MOSFETs across the USA, India, Europe, Australia, and various other global locations. FDMS4D0N12C MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

FDMS4D0N12C ON Semiconductor

FDMS4D0N12C electronic component of ON Semiconductor
FDMS4D0N12C ON Semiconductor
FDMS4D0N12C MOSFETs
FDMS4D0N12C  Semiconductors

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See Product Specifications
Part No. FDMS4D0N12C
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: MOSFET PTNG 120V N-FET 118A
Datasheet: FDMS4D0N12C Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
10: USD 6.292 ea
Line Total: USD 62.92 
Availability - 475
Ship by Fri. 07 Feb to Thu. 13 Feb
MOQ: 10  Multiples: 1
Pack Size: 1
Availability Price Quantity
475
Ship by Fri. 07 Feb to Thu. 13 Feb
MOQ : 10
Multiples : 1
10 : USD 6.292
15 : USD 4.4031
25 : USD 4.3589
100 : USD 3.198
250 : USD 2.7375

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Brand
Forward Transconductance - Min
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the FDMS4D0N12C from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FDMS4D0N12C and other electronic components in the MOSFETs category and beyond.

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DATA SHEET www.onsemi.com MOSFET - Power, Single V I MAX R MAX (BR)DDS D DS(on) N-Channel, PQFN8 67 A 4.0 m 10 V 120 V 120 V, 4.0 m , 114 A 33 A 8.0 m 6 V FDMS4D0N12C ELECTRICAL CONNECTION Features Small Footprint (5x6 mm) for Compact Design Low R to Minimize Conduction Losses DS(on) Low Q and Capacitance to Minimize Driver Losses G These are Pbfree, Halogen Free / BFR Free and are RoHS Compliant Typical Applications N-Channel MOSFET Synchronous Rectification ACDC and DCDC Power Supplies ACDC Adapters (USB PD) SR Load Switch MAXIMUM RATINGS (T = 25C, Unless otherwise specified) A Parameter Symbol Value Unit PQFN8 5x6 DraintoSource Voltage V 120 V DSS (Power 56) GatetoSource Voltage V 20 V CASE 483AF GS Continuous Drain Steady T = 25C I 114 A C D Current R State JC (Note 7) MARKING DIAGRAM Power Dissipation P 106 W D R (Note 2) JC Y&Z&3&K FDMS Continuous Drain Steady T = 25C I 18.5 A A D 4D0N12C Current R State JA (Note 6, 7) Power Dissipation P 2.7 W D R (Note 6, 7) JA Y = onsemi Logo &Z = Assembly Plant Code Pulsed Drain T = 25C, t = 10 s I 628 A A p DM &3 = Numeric Date Code Current &K = Lot Code Operating Junction and Storage T , T 55 to C J stg FDMS4D0N12C = Specific Device Code Temperature +150 Source Current (Body Diode) I 114 A S ORDERING INFORMATION Single Pulse DraintoSource Avalanche E 222 mJ AS See detailed ordering and shipping information on page 2 of Energy (I = 66.7 A, L = 0.1 mH) AV this data sheet. Lead Temperature Soldering Reflow for T 300 C L Soldering Purposes (1/8 from case for 10 s) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Semiconductor Components Industries, LLC, 2013 1 Publication Order Number: September, 2021 Rev. 3 FDMS4D0N12C/DFDMS4D0N12C ORDERING INFORMATION Device Package Shipping FDMS4D0N12C PQFN8 3,000 / Tape & Reel (PbFree) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. THERMAL RESISTANCE RATINGS Parameter Symbol Max Unit C/W Junction to Case Steady State (Note 7) R JC 1.18 Junction to Ambient Steady State (Note 7) 45 R JA ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Symbol Parameter Test Conditions Min Typ Max Unit OFF CHARACTERISTICS Drain to Source Breakdown Voltage 120 V V V = 0 V, I = 250 A (BR)DSS GS D mV/C Drain to Source Breakdown Voltage I = 250 A, ref to 25C 49 D V / T (BR)DSS J Temperature Coefficient Zero Gate Voltage Drain Current I V = 0 V, T = 25C 1 A DSS GS J V = 96 V DS T = 125C 100 A J Gate to Source Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 8) Gate Threshold Voltage V V V = V , I = 370 A 2.0 4.0 GS(TH) GS DS D I = 370 A, ref to 25C mV/C Negative Threshold Temperature V /T D 8.5 GS(TH) J Coefficient m V = 10 V, I = 67 A 3.3 4.0 GS D R Drain to Source On Resistance DS(on) V = 6 V, I = 33 A 4.7 8.0 GS D 144 Forward Transconductance g V = 5 V, I = 67 A S FS DS D 0.9 GateResistance T = 25C 1.8 R G A CHARGES & CAPACITANCES V = 0 V, f = 1 MHz, 4565 6460 pF Input Capacitance C GS ISS V = 60 V DS 2045 3060 Output Capacitance C OSS 17 24 Reverse Transfer Capacitance C RSS V = 6 V, V = 60 V, 36 51 nC Total Gate Charge Q GS DS G(TOT) I = 67 A D V = 10 V, V = 60 V, 58 82 Total Gate Charge Q GS DS G(TOT) I = 67 A D 21 GatetoSource Charge Q GS 9 GatetoDrain Charge Q GD 5 V Plateau Voltage V GP V = 60 V, V = 0 V 207 nC Output Charge Q DD GS OSS www.onsemi.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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